33,846 research outputs found
Thermal rectification effects of multiple semiconductor quantum dot junctions
Based on the multiple energy level Anderson model, this study theoretically
examines the thermoelectric effects of semiconductor quantum dots (QDs) in the
nonlinear response regime. The charge and heat currents in the sequential
tunneling process are calculated by using the Keldysh Green's function
technique. Results show that the thermal rectification effect can be observed
in a multiple QD junction system, whereas the tunneling rate, size fluctuation,
and location distribution of QD significantly influence the rectification
efficiency.Comment: 5 pages, 8figure
Digital Switching in the Quantum Domain
In this paper, we present an architecture and implementation algorithm such
that digital data can be switched in the quantum domain. First we define the
connection digraph which can be used to describe the behavior of a switch at a
given time, then we show how a connection digraph can be implemented using
elementary quantum gates. The proposed mechanism supports unicasting as well as
multicasting, and is strict-sense non-blocking. It can be applied to perform
either circuit switching or packet switching. Compared with a traditional space
or time domain switch, the proposed switching mechanism is more scalable.
Assuming an n-by-n quantum switch, the space consumption grows linearly, i.e.
O(n), while the time complexity is O(1) for unicasting, and O(log n) for
multicasting. Based on these advantages, a high throughput switching device can
be built simply by increasing the number of I/O ports.Comment: 24 pages, 16 figures, LaTe
Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors
The charge transport behaviors of parallel double single electron transistors
(SETs) are investigated by the Anderson model with two impurity levels. The
nonequilibrium Keldysh Green's technique is used to calculate the
current-voltage characteristics of system. For SETs implemented by quantum dots
(QDs) embedded into a thin layer, the interdot Coulomb repulsion is
more important than the interdot electron hopping as a result of high potential
barrier height between QDs and . We found that the interdot Coulomb
repulsion not onlyleads to new resonant levels, but also creates negative
differential conductances.Comment: 12 pages, 7 figure
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