Nickel: A very fast diffuser in silicon

Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been DNi(T)=2.3×10exp−3 exp(−0.47 eV/kBT) cm2/s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity DNi(T)=(1.69±0.74)×10exp−4 exp(−0.15±0.04 eV/kBT)  cm2/s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 °C, and orders of magnitude higher when extrapolated to room temperature.Peer reviewe

A NEW WAY TO INCREASE EFFICIENCY SILICON PHOTOCELLS

It is shown that the effect of additional silicon doping with nickel weakly depends on the method of its introduction, and the presence of a nickel-enriched layer in silicon photocells leads to an improvement in their parameters. It was found that doping silicon with nickel prior to the formation of the p – n junction of the photocell is a more efficient method of its introduction