106 research outputs found

    Sample Preparation Methodologies for In Situ Liquid and Gaseous Cell Analytical Transmission Electron Microscopy of Electropolished Specimens

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    AbstractIn recent years, an increasing number of studies utilizingin situliquid and/or gaseous cell scanning/transmission electron microscopy (S/TEM) have been reported. Because of the difficulty in the preparation of suitable specimens, these environmental S/TEM studies have been generally limited to studies of nanoscale structured materials such as nanoparticles, nanowires, or sputtered thin films. In this paper, we present two methodologies which have been developed to facilitate the preparation of electron-transparent samples from conventional bulk metals and alloys forin situliquid/gaseous cell S/TEM experiments. These methods take advantage of combining sequential electrochemical jet polishing followed by focused ion beam extraction techniques to create large electron-transparent areas for site-specific observation. As an example, we illustrate the application of this methodology for the preparation ofin situspecimens from a cold-rolled Type 304 austenitic stainless steel sample, which was subsequently examined in both 1 atm of air as well as fully immersed in a H2O environment in the S/TEM followed by hyperspectral imaging. These preparation techniques can be successfully applied as a general procedure for a wide range of metals and alloys, and are suitable for a variety ofin situanalytical S/TEM studies in both aqueous and gaseous environments.</jats:p

    Nanometer-scale sharpness in corner-overgrown heterostructures

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    A corner-overgrown GaAs/AlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile of 3.5 nm width. In the AlGaAs layers we observe self-ordered diagonal stripes, precipitating exactly at the corner, which are regions of increased Al content measured by an XEDS analysis. A quantitative model for self-limited growth is adapted to the present case of faceted MBE growth, and the corner sharpness is discussed in relation to quantum confined structures. We note that MBE corner overgrowth maintains nm-sharpness even after microns of growth, allowing the realization of corner-shaped nanostructures.Comment: 4 pages, 3 figure

    Temperature Dependence of Ion Irradiation Induced Amorphization of Zirconolite

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    Zirconolite is one of the major host phases for actinides in various wasteforms for immobilizing high level radioactive waste (HLW). Over time, zirconolite's crystalline matrix is damaged by {alpha}-particles and energetic recoil nuclei recoil resulting from {alpha}-decay events. The cumulative damage caused by these particles results in amorphization. Data from natural zirconolites suggest that radiation damage anneals over geologic time and is dependant on the thermal history of the material. Proposed HLW containment strategies rely on both a suitable wasteform and geologic isolation. Depending on the waste loading, depth of burial, and the repository-specific geothermal gradient, burial could result in a wasteform being exposed to temperatures of between 100--450 C. Consequently, it is important to assess the effect of temperature on radiation damage in synthetic zirconolite. Zirconolite containing wasteforms are likely to be hot pressed at or below 1,473 K (1,200 C) and/or sintered at or below 1,623 K (1,350 C). Zirconolite fabricated at temperatures below 1,523 K (1,250 C) contains many stacking faults. As there have been various attempts to link radiation resistance to structure, the authors decided it was also pertinent to assess the role of stacking faults in radiation resistance. In this study, they simulate {alpha}-decay damage in two zirconolite samples by irradiating them with 1.5 MeV Kr{sup +} ions using the High Voltage Electron Microscope-Tandem User Facility (HTUF) at Argonne National Laboratory (ANL) and measure the critical dose for amorphization (D{sub c}) at several temperatures between 20 and 773 K. One of the samples has a high degree of crystallographic perfection, the other contains many stacking faults on the unit cell scale. Previous authors proposed a model for estimating the activation energy of self annealing in zirconolite and for predicting the critical dose for amorphization at any temperature. The authors discuss their results and earlier published data in relation to that model
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