Polarization characteristics, control, and modulation of vertical-cavity surface emitting lasers

The gain-dependent polarization properties of vertical-cavity surface emitting lasers and methods for polarization control and modulation are discussed. The partitioning of power between the two orthogonal eigen polarizations is shown to depend upon the relative spectral alignment of the nondegenerate polarization cavity resonances with the laser gain spectrum. A dominant polarization can thus be maintained by employing a blue-shifted offset of the peak laser gain relative to the cavity resonance wavelength. Alternatively, the polarization can be controlled through use of anisotropic transverse cavity geometries. The orthogonal eigen polarizations are also shown to enable polarization modulation. By exploiting polarization switching transitions in cruciform lasers, polarization modulation of the fundamental mode up to 50 MHz is demonstrated. At lower modulation frequencies, complementary digital polarized output or frequency doubling of the polarized output is obtained. Control and manipulation of vertical-cavity laser polarization may prove valuable for present and future applications

Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

We present the results of a three year LDRD project that has focused on overcoming major materials roadblocks to achieving AlGaN-based deep-UV laser diodes. We describe our growth approach to achieving AlGaN templates with greater than ten times reduction of threading dislocations which resulted in greater than seven times enhancement of AlGaN quantum well photoluminescence and 15 times increase in electroluminescence from LED test structures. We describe the application of deep-level optical spectroscopy to AlGaN epilayers to quantify deep level energies and densities and further correlate defect properties with AlGaN luminescence efficiency. We further review our development of p-type short period superlattice structures as an approach to mitigate the high acceptor activation energies in AlGaN alloys. Finally, we describe our laser diode fabrication process, highlighting the development of highly vertical and smooth etched laser facets, as well as characterization of resulting laser heterostructures

High efficiency AlGaInP-based 660-680nm vertical-cavity surface emitting lasers

Includes bibliographical references (pages 197-198).Record continuous-wave output power of 2.9mW and 10% peak wallplug efficiency have been achieved from planar gain guided AlGaInP-based vertical-cavity surface emitting lasers. These results represent nearly an order of magnitude improvement in performance over previous AlGaInP-based vertical-cavity lasers

Final LDRD report : development of advanced UV light emitters and biological agent detection strategies.

We present the results of a three year LDRD project which has focused on the development of novel, compact, ultraviolet solid-state sources and fluorescence-based sensing platforms that apply such devices to the sensing of biological and nuclear materials. We describe our development of 270-280 nm AlGaN-based semiconductor UV LEDs with performance suitable for evaluation in biosensor platforms as well as our development efforts towards the realization of a 340 nm AlGaN-based laser diode technology. We further review our sensor development efforts, including evaluation of the efficacy of using modulated LED excitation and phase sensitive detection techniques for fluorescence detection of bio molecules and uranyl-containing compounds

W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN

W, WSi{sub 0.44} and Ti/Al contacts were examined on n{sup +} In{sub 0.65}Ga{sub 0.35}N, InN and In{sub 0.75}Al{sub 0.25}N. W was found to produce low specific contact resistance ({rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2}) ohmic contacts to InGaN, with significant reaction between metal and semiconductor at 900 {degrees}C mainly due to out diffusion of In and N. WSi{sub x} showed an as-deposited {rho}{sub c} of 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} but this degraded significantly with subsequent annealing. Ti/Al contacts were stable to {approximately} 600 {degrees}C ({rho}{sub c} {approximately} 4{times}10{sup {minus}7} {Omega} {center_dot}cm{sup 2} at {le}600 {degrees}C). The surfaces of these contacts remain smooth to 800 {degrees}C for W and WSi{sub x} and 650 {degrees}C for Ti/Al. InN contacted with W and Ti/Al produced ohmic contacts with {rho}{sub c} {approximately} 10{sup {minus}7} {Omega} {center_dot}cm{sup 2} and for WSi{sub x} {rho}{sub c} {approximately} 10{sup {minus}6} {Omega} {center_dot}cm{sup 2}. All remained smooth to {approximately} 600 {degrees}C, but exhibited significant interdiffusion of In, N, W and Ti respectively at higher temperatures. The contact resistances for all three metalization schemes were {ge} 10{sup {minus}4} {Omega} {center_dot}cm{sup 2} on InAlN, and degrades with subsequent annealing. The Ti/Al was found to react with the InAlN above 400 {degrees}C, causing the contact resistance to increase rapidly. W and WSi{sub x} proved to be more stable with {rho}{sub c} {approximately} 10{sup {minus}2} and 10{sup {minus}3} {Omega} {center_dot}cm{sup 2} up to 650 {degrees}C and 700 {degrees}C respectively

Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

We present the results of a three year LDRD project that has focused on overcoming major materials roadblocks to achieving AlGaN-based deep-UV laser diodes. We describe our growth approach to achieving AlGaN templates with greater than ten times reduction of threading dislocations which resulted in greater than seven times enhancement of AlGaN quantum well photoluminescence and 15 times increase in electroluminescence from LED test structures. We describe the application of deep-level optical spectroscopy to AlGaN epilayers to quantify deep level energies and densities and further correlate defect properties with AlGaN luminescence efficiency. We further review our development of p-type short period superlattice structures as an approach to mitigate the high acceptor activation energies in AlGaN alloys. Finally, we describe our laser diode fabrication process, highlighting the development of highly vertical and smooth etched laser facets, as well as characterization of resulting laser heterostructures

Electrical and structural analysis of high-dose Si implantation in GaN

For the development of ion implantation processes for GaN to advanced devices, it is important to understand the dose dependence of impurity activation along with implantation-induced damage generation and removal. We find that Si implantation in GaN can achieve 50% activation at a dose of 1×1016 cm-2, despite significant residual damage after the 1100 °C activation anneal. The possibility that the generated free carriers are due to implantation damage alone and not Si-donor activation is ruled out by comparing the Si results to those for implantation of the neutral species Ar. Ion channeling and cross-sectional transmission electron microscopy are used to characterize the implantation-induced damage both as implanted and after a 1100 °C anneal. Both techniques confirm that significant damage remains after the anneal, which suggests that activation of implanted Si donors in GaN doses not require complete damage removal. However, an improved annealing process may be needed to further optimize the transport properties of implanted regions in GaN. © 1997 American Institute of Physics