The generation of the electrical oscillations in a contact of an AFM probe with an individual Au nanoparticle in a SiO2/Si film

Сообщается о наблюдении электрических колебаний в колебательном контуре, включѐнном в цепь контакта АСМ зонда к туннельно-прозрачной (толщиной ~5 нм) плѐнке SiO2/Si с наночастицами (НЧ) u. Эффект связан с резонансным туннелированием через размерно-квантованные состояния в малых (~1 нм) НЧ u.The electrical oscillations in an oscillating loop connected to an AFM probe contact to a tunnel-transparent (~5 nm thick) SiO2/Si film with Au nanoparticles (NPs) have been observed. The effect was attributed to the resonant tunneling via the quantum confined states in small (~1 nm) Au NPs.Работа выполнена при поддержке Минобрнауки РФ (16.7864.2017/БЧ)

Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states

Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise

The effects of external digitally synthesized Gaussian noise on the resistive state relaxation time of a ZrO2(Y)-based memristive device when switching from a low resistance state to a high resistance state have been experimentally investigated. A nonmonotonic dependence of the resistive state relaxation time on the external noise intensity is found. This behavior is interpreted as a manifestation of the noise-enhanced stability effect previously observed in various complex systems with metastable states. It is shown that the experimental results agree satisfactorily with the theoretical ones. The presented results indicate the constructive role of external noise and its possible use as a mechanism for controlling the kinetics of resistive switching