Preparation of SrRuO\u3csub\u3e3\u3c/sub\u3e films for advanced CMOS metal gates

\u3cp\u3eWe report on the growth and properties of SrRuO\u3csub\u3e3\u3c/sub\u3e films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO\u3csub\u3e2\u3c/sub\u3e, atomic-layer deposited Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO \u3csub\u3e3\u3c/sub\u3e metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N\u3csub\u3e2\u3c/sub\u3e +10% H\u3csub\u3e2\u3c/sub\u3e) were employed for testing the stability of the SrRuO\u3csub\u3e3\u3c/sub\u3e metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrode are analysed with regards to integration in CMOS devices.\u3c/p\u3

Preparation of SrRuO\u3csub\u3e3\u3c/sub\u3e films for advanced CMOS metal gates

\u3cp\u3eWe report on the growth and properties of SrRuO\u3csub\u3e3\u3c/sub\u3e films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO\u3csub\u3e2\u3c/sub\u3e, atomic-layer deposited Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO \u3csub\u3e3\u3c/sub\u3e metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N\u3csub\u3e2\u3c/sub\u3e +10% H\u3csub\u3e2\u3c/sub\u3e) were employed for testing the stability of the SrRuO\u3csub\u3e3\u3c/sub\u3e metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrode are analysed with regards to integration in CMOS devices.\u3c/p\u3

Branching and competition in the European banking industry

In this study branching costs and competitiveness of European banks are measured by fitting a monopolistic competition model to a representative sample drawn from nine EEC banking industries in the period from 1990 to 1996. In the theoretical model, banks decide strategically the size of their branching network anticipating the degree of competition faced on interest rates. From the structural equations of the model an econometric test is derived in order to measure branching costs and degree of competition in banking services. The empirical analysis captures their changing over time together with the impact of various European directives aiming at deregulating the banking industry. Furthermore the study shows persistence of segmentation acoss EEC banking industries.