324 research outputs found
The band structure and Fermi surface of LaSrMnO thin films studied by in-situ angle-resolved photoemission spectroscopy
We have performed an in situ angle-resolved photoemission spectroscopy
(ARPES) on single-crystal surfaces of LaSrMnO (LSMO) thin
films grown on SrTiO (001) substrates by laser molecular beam epitaxy,
and investigated the electronic structure near the Fermi level (). The
experimental results were compared with the band-structure calculation based on
LDA + . The band structure of LSMO thin films consists of several highly
dispersive O 2 derived bands in the binding energy range of 2.0 - 6.0 eV and
Mn 3 derived bands near . ARPES spectra around the point show
a dispersive band near indicative of an electron pocket centered at the
point, although it was not so clearly resolved as an electronlike
pocket due to the suppression of spectral weight in the vicinity of .
Compared with the band-structure calculation, the observed conduction band is
assigned to the Mn 3 majority-spin band responsible for the
half-metallic nature of LSMO. We have found that the estimated size of the
Fermi surface is consistent with the prediction of the band-structure
calculation, while the band width becomes significantly narrower than the
calculation. Also, the intensity near is strongly reduced. The origin
of these discrepancies between the experiment and the calculation is discussed.Comment: 7 pages, 5 figure
Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in LaSrMnO
We report the first observation of changes in the electronic structure of
LaSrMnO (LSMO) across the filling-control metal-insulator
(MI) transition by means of in situ angle-resolved photoemission spectroscopy
(ARPES) of epitaxial thin films. The Fermi surface gradually disappears near
the MI transition by transferring the spectral weight from the coherent band
near the Fermi level () to the lower Hubbard band, whereas a pseudogap
behavior also exists in the ARPES spectra in the close vicinity of for
the metallic LSMO. These results indicate that the spectral weight transfer
derived from strong electron-electron interaction dominates the gap formation
in LSMO associated with the filling-control MI transition.Comment: 11 pages, 4 figure
In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations
We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3
(PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of
epitaxial strain on the electronic structure. We found that the chemical
potential shifted monotonically with doping, unlike bulk PCMO, implying the
disappearance of incommensurate charge fluctuations of bulk PCMO. In the
valence-band spectra, we found a doping-induced energy shift toward the Fermi
level (E_F) but there was no spectral weight transfer, which was observed in
bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions
determined by angle-resolved photoemission spectroscopy and could not be
explained by the metallic band structure of the C-type antiferromagnetic state,
probably due to localization of electrons along the ferromagnetic chain
direction or due to another type of spin-orbital ordering.Comment: 5 pages, 4 figure
Madelung potentials and covalency effect in strained LaSrMnO thin films studied by core-level photoemission spectroscopy
We have investigated the shifts of the core-level photoemission spectra of
LaSrMnO thin films grown on three kinds of substrates,
SrTiO, (LaAlO)-(SrAlTaO), and
LaAlO. The experimental shifts of the La 4d and Sr 3d core levels are
almost the same as the calculation, which we attribute to the absence of
covalency effects on the Madelung potentials at these atomic sites due to the
nearly ionic character of these atoms. On the other hand, the experimental
shifts of the O and Mn core levels are negligibly small, in
disagreement with the calculation. We consider that this is due to the strong
covalent character of the Mn-O bonds.Comment: 4 pages, 5 figure
Chemical potential shift and spectral weight transfer in PrCaMnO revealed by photoemission spectroscopy
We have studied the chemical potential shift and changes in the electronic
density of states near the Fermi level () as a function of carrier
concentration in PrCaMnO (PCMO, ) through
the measurements of photoemission spectra. The results showed that the chemical
potential shift was suppressed for x \agt 0.3, where the charge exchange
(CE)-type antiferromagnetic charge-ordered state appears at low temperatures.
We consider this observation to be related to charge self-organization such as
stripe formation on a microscopic scale in this composition range. Together
with the previous observation of monotonous chemical potential shift in
LaSrMnO, we conclude that the tendency toward the charge
self-organization increases with decreasing bandwidth. In the valence band,
spectral weight of the Mn 3 electrons in PCMO was transferred from
1 eV below to the region near with hole doping, leading to a
finite intensity at even in the paramagnetic insulating phase for x \agt
0.3, probably related with the tendency toward charge self-organization. The
finite intensity at in spite of the insulating transport behavior is
consistent with fluctuations involving ferromagnetic metallic states.Comment: 6 pages, 5 figure
Effect of strong localization of doped holes in angle-resolved photoemission spectra of LaSrFeO
We have performed an angle-resolved photoemission spectroscopy study of
LaSrFeO using {\it in situ} prepared thin films and
determined its band structure. The experimental band dispersions could be well
explained by an empirical band structure assuming the G-type antiferromagnetic
state. However, the Fe 3d bands were found to be shifted downward relative to
the Fermi level () by eV compared with the calculation and to
form a (pseudo)gap of eV at . We attribute this observation to a
strong localization effect of doped holes due to polaron formation.Comment: 5 pages, 5 figure
Angle-resolved photoemission spectroscopy of perovskite-type transition-metal oxides and their analyses using tight-binding band structure
Nowadays it has become feasible to perform angle-resolved photoemission
spectroscopy (ARPES) measurements of transition-metal oxides with
three-dimensional perovskite structures owing to the availability of
high-quality single crystals of bulk and epitaxial thin films. In this article,
we review recent experimental results and interpretation of ARPES data using
empirical tight-binding band-structure calculations. Results are presented for
SrVO (SVO) bulk single crystals, and LaSrFeO (LSFO) and
LaSrMnO (LSMO) thin films. In the case of SVO, from comparison
of the experimental results with calculated surface electronic structure, we
concluded that the obtained band dispersions reflect the bulk electronic
structure. The experimental band structures of LSFO and LSMO were analyzed
assuming the G-type antiferromagnetic state and the ferromagnetic state,
respectively. We also demonstrated that the intrinsic uncertainty of the
electron momentum perpendicular to the crystal surface is important for the
interpretation of the ARPES results of three-dimensional materials.Comment: 25 pages, 12 figure
Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a
topmost SrTiO3 layer of variable thickness. Finite coherent spectral weight
with a clear Fermi cut-off was observed at chemically abrupt SrTiO3/LaTiO3
interfaces, indicating that an ``electronic reconstruction'' occurs at the
interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For
SrTiO3/LaTiO3 interfaces annealed at high temperatures (~ 1000 C), which leads
to Sr/La atomic interdiffusion and hence to the formation of La1-xSrxTiO3-like
material, the intensity of the incoherent part was found to be dramatically
reduced whereas the coherent part with a sharp Fermi cut-off is enhanced due to
the spread of charge. These important experimental features are well reproduced
by layer dynamical-mean-field-theory calculation
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