Two Octave Phemt Power Amplifier for EW Applications

Two 4.5-18 GHz MMIC amplifiers have been designed and fully tested. They have been fabricated using the Power pHemt process available at TriQuint Semiconductor, Texas. The first amplifier is a one stage distributed power amplifier which has been power optimised and exhibits 1W CW output power for a 6 dB associated gain. The second amplifier is a 2W three stage power amplifier with 20 dB gain. They are part of a first run launched in order to evaluate the different wideband structures and to improve linear and non linear models

Optimum design method of distributed power-FET amplifiers. Application to 2-18GHz MMIC exhibiting improved power performances

International audienceA suitable and effective design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. An analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best trade-offs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operation

A new coherent extraction method of FETS and HEMTS models for MMIC applications

In this paper, we present a study of broad band FET model parameter extraction problems. A novel modeling method, providing reliable FET small-signal model parameters, is presented and compared with well-known extraction methods. The named extrinsic elements are optimized to yield a broad band coherent model and the optimization approach is based on "simulated annealing" method which overcomes the multi-minimum optimization problems. Bias dependence of some of the named extrinsic elements are reported and discussed. In particular, physical explanations of the negative resistance values, based on quasi 2D physical simulations , are discussed and the novel extraction method is evaluated by MMIC FETS and HEMTS broad band measurements

Graphical-method spots power-FET operating points

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Large signal design method of distributed power amplifiers applied to a 2-18GHz GaAs chip exhibiting high power density performances

International audienceA suitable large signal design method of distributed power amplifiers, based on the optimum FET load requirement for high power operation, is proposed in this article. The gate and drain line characteristic admittances are determined, providing both the initial values and right directions for an optimum design. To validate the proposed design method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC distributed amplifier demonstrated an improved power density performance of 340 mW/mm over the 2-18-GHz frequency band associated with a minimum of 13% power-added efficiency and 24% drain efficiency at 1-dB compression in CW operatio

Large signal design criteria of distributed power amplifiers applied to 2-18GHz GaAs chip with high power density performances

International audienceA suitable and efficient design method of distributed power amplifiers, based on the optimum FET load requirement for power operation, is proposed in this paper. The analytical determination of the gate and drain line characteristic admittances provides both the initial values and right directions for an optimum design. The best tradeoffs between wide band and high power operation have been investigated. To validate the method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC amplifier demonstrated state of the art power density performance of 340 mW/mm over the 2-18 GHz band associated with 14.2% power added efficiency, 26.5% drain efficiency and 26.1 dBm output power at 1 dB compression in CW operatio

Topologia optima de amplificadores distribuidos de potencia a MESFET

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New Design Method of Uniform and Non-Uniform Distributed Power Amplifiers

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New Design Method of Non-Uniform Distributed Power Amplifiers. Application to a single stage 1W PHEMT MMIC

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