Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

Silicon nanocrystals were formed in SiO2 using Si ion implantation followed by thermal annealing. The nanocrystal-doped SiO2 layer was implanted with Er to a peak concentration of 1.8 at. %. Upon 458 nm excitation the sample shows a broad nanocrystal-related luminescence spectrum centered around 750 nm and two sharp Er luminescence lines at 982 and 1536 nm. By measuring the excitation spectra of these features as well as the temperature-dependent intensities and luminescence dynamics we conclude that (a) the Er is excited by excitons recombining within Si nanocrystals through a strong coupling mechanism, (b) the Er excitation process at room temperature occurs at a submicrosecond time scale, (c) excitons excite Er with an efficiency >55%, and (d) each nanocrystal can have at most ~1 excited Er ion in its vicinity

Matching fields of a long superconducting film

We obtain the vortex configurations, the matching fields and the magnetization of a superconducting film with a finite cross section. The applied magnetic field is normal to this cross section, and we use London theory to calculate many of its properties, such as the local magnetic field, the free energy and the induction for the mixed state. Thus previous similar theoretical works, done for an infinitely long superconducting film, are recovered here, in the special limit of a very long cross section.Comment: Contains a REVTeX file and 4 figure

Size-dependent electron-hole exchange interaction in Si nanocrystals

Silicon nanocrystals with diameters ranging from [approximate]2 to 5.5 nm were formed by Si ion implantation into SiO2 followed by annealing. After passivation with deuterium, the photoluminescence (PL) spectrum at 12 K peaks at 1.60 eV and has a full width at half maximum of 0.28 eV. The emission is attributed to the recombination of quantum-confined excitons in the nanocrystals. The temperature dependence of the PL intensity and decay rate at several energies between 1.4 and 1.9 eV was determined between 12 and 300 K. The temperature dependence of the radiative decay rate was determined, and is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels due to the electron-hole exchange interaction. The exchange energy splitting increases from 8.4 meV for large nanocrystals ([approximate]5.5 nm) to 16.5 meV for small nanocrystals ([approximate]2 nm). For all nanocrystal sizes, the radiative rate from the singlet state is 300–800 times larger than the radiative rate from the triplet state

The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals

Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminescence peak energy and lifetimes show poor correlations with nanocrystal size compared to calculations involving radiative recombination of quantum-confined excitons in Ge quantum dots. In addition, the photoluminescence spectra and lifetime measurements show only a weak temperature dependence. These observations strongly suggest that the observed visible luminescence in our samples is not due to the radiative recombination of quantum-confined excitons in Ge nanocrystals. Instead, observations of similar luminescence in Xe+ -implanted samples and reversible PL quenching by hydrogen or deuterium suggest that radiative defect centers in the SiO2 matrix are responsible for the observed luminescence

High sensitive quasi freestanding epitaxial graphene gassensor on 6H-SiC

We have measured the electrical response to NO$_2$, N$_2$, NH$_3$ and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac Point leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N$_2$, NH$_3$ and CO

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ``redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures (< 500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10

Charging of single Si nanocrystals by atomic force microscopy

Conducting-tip atomic force microscopy (AFM) has been used to electronically probe silicon nanocrystals on an insulating substrate. The nanocrystal samples were produced by aerosol techniques and size classified; nanocrystal size can be controlled in the size range of 2-50 nm with a size variation of less than 10%. Using a conducting tip, the charge was injected directly into the nanocrystals, and the subsequent dissipation of the charge was monitored. Estimates of the injected charge can be made by comparison of the data with an intermittent contact mode model of the AFM response to the electrostatic force produced by the stored charge

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si + implantation at a fluence of 6 × 1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 µs for the unoxidized film to 43 µs for the film that was oxidized for 29 min