412 research outputs found

    Construction of Non-Perturbative, Unitary Particle-Antiparticle Amplitudes for Finite Particle Number Scattering Formalisms

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    Starting from a unitary, Lorentz invariant two-particle scattering amplitude , we show how to use an identification and replacement process to construct a unique, unitary particle-antiparticle amplitude. This process differs from conventional on-shell Mandelstam s,t,u crossing in that the input and constructed amplitudes can be off-diagonal and off-energy shell. Further, amplitudes are constructed using the invariant parameters which are appropriate to use as driving terms in the multi-particle, multichannel non-perturbative, cluster decomposable, relativistic scattering equations of the Faddeev-type integral equations recently presented by Alfred, Kwizera, Lindesay and Noyes. It is therefore anticipated that when so employed, the resulting multi-channel solutions will also be unitary. The process preserves the usual particle-antiparticle symmetries. To illustrate this process, we construct a J=0 scattering length model chosen for simplicity. We also exhibit a class of physical models which contain a finite quantum mass parameter and are Lorentz invariant. These are constructed to reduce in the appropriate limits, and with the proper choice of value and sign of the interaction parameter, to the asymptotic solution of the non-relativistic Coulomb problem, including the forward scattering singularity, the essential singularity in the phase, and the Bohr bound-state spectrum

    Termination Reaction in the Anionic Polymerization of Methacrylonitrile

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    The anionic polymerization of methacrylonitrile initiated by triethylphosphine in dimethylformamide was studied. Experimental evidence for two mechanisms of termination reaction was obtained. By addition of water or alcohol in polymerizing system the rate of polymerization and molecular weight of polymethacrylon1itrile decrease, which proves the termination reaction to be bimolecular and proceed by interaction of the active carbanion with water or alcohol. The rate constant for termination of free anions with water was determined, k~,0 = 2.2 x 102 dm3 moP s-1β€’ The termination reaction could not be excluded by purification and prolonged drying of all components of the system, which indicates that the second mechanism of termination is operative as well. Conductivity measurements gave evidence for a monomolecular spontaneous reaction leading to deactivation of the anion

    What have we already learned from the CMB?

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    The COBE satellite, and the DMR experiment in particular, was extraordinarily successful. However, the DMR results were announced about 7 years ago, during which time a great deal more has been learned about anisotropies in the Cosmic Microwave Background (CMB). The CMB experiments currently being designed and built, including long-duration balloons, interferometers, and two space missions, promise to address several fundamental cosmological issues. We present our evaluation of what we already know, what we are beginning to learn now, and what the future may bring.Comment: 20 pages, 3 figures. Changes to match version accepted by PAS

    Automatic Measurement in Metallography

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    Quantitative analysis of the structure of metals and alloys is an important part of modern metal science. To obtain quantitative data and build dependencies, metallographic image processing programs are used, oriented both for scientific research and for use in industry. Programs capable of automatically performing metallographic analysis are of great interest to consumers. When advertising such programs, it is often claimed that they allow quantitative analysis of the structure with virtually no time. The purpose of this work was to determine the time spent on quantitative metallographic analysis in some image processing programs presented on the Belarusian market. Connected and unconnected metallographic objects were considered. It is shown that automatic quantitative analysis is possible for unconnected objects (powders, cast iron graphite). The time required is within a minute. For connected objects (structures of metals and alloys after metallographic etching), the time required to detect objects and obtain digital data is 10–40 min or more, depending on the complexity of the object, which is unacceptable for factory laboratories that analyze a large number of samples per shift. Therefore, it is recommended that potential users of metallographic image processing software always require a substantive demonstration of the automatic measurement capabilities of the proposed software

    Evolution of vacancy-related defects upon annealing of ion-implanted germanium

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    Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1Γ—10 exp 12 cm expβˆ’2 and 4Γ—10 exp 14 cm expβˆ’2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1Γ—10 exp 13 cm exp βˆ’2 and a fluence of 1Γ—10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Peer reviewe

    Multiphoton Transitions in a Spin System Driven by Strong Bichromatic Field

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    EPR transient nutation spectroscopy is used to measure the effective field (Rabi frequency) for multiphoton transitions in a two-level spin system bichromatically driven by a transverse microwave (MW) field and a longitudinal radio-frequency (RF) field. The behavior of the effective field amplitude is examined in the case of a relatively strong MW field, when the derivation of the effective Hamiltonian cannot be reduced to first-order perturbation theory in w_{1} / w_{rf} (w_{1} is the microwave Rabi frequency, w_{rf} is the RF frequency). Experimental results are consistently interpreted by taking into account the contributions of second and third order in w_{1} / w_{rf} evaluated by Krylov-Bogolyubov-Mitropolsky averaging. In the case of inhomogeneously broadened EPR line, the third-order correction modifies the nutation frequency, while the second-order correction gives rise to a change in the nutation amplitude due to a Bloch-Siegert shift.Comment: 7 pages, 6 figure

    АвтоматичСскиС измСрСния Π² ΠΌΠ΅Ρ‚Π°Π»Π»ΠΎΠ³Ρ€Π°Ρ„ΠΈΠΈ

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    Quantitative analysis of the structure of metals and alloys is an important part of modern metal science. To obtain quantitative data and build dependencies, metallographic image processing programs are used, oriented both for scientific research and for use in industry. Programs capable of automatically performing metallographic analysis are of great interest to consumers. When advertising such programs, it is often claimed that they allow quantitative analysis of the structure with virtually no time. The purpose of this work was to determine the time spent on quantitative metallographic analysis in some image processing programs presented on the Belarusian market. Connected and unconnected metallographic objects were considered. It is shown that automatic quantitative analysis is possible for unconnected objects (powders, cast iron graphite). The time required is within a minute. For connected objects (structures of metals and alloys after metallographic etching), the time required to detect objects and obtain digital data is 10–40 min or more, depending on the complexity of the object, which is unacceptable for factory laboratories that analyze a large number of samples per shift. Therefore, it is recommended that potential users of metallographic image processing software always require a substantive demonstration of the automatic measurement capabilities of the proposed software.ΠšΠΎΠ»ΠΈΡ‡Π΅ΡΡ‚Π²Π΅Π½Π½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ· структуры ΠΌΠ΅Ρ‚Π°Π»Π»ΠΎΠ² ΠΈ сплавов являСтся Π²Π°ΠΆΠ½ΠΎΠΉ Ρ‡Π°ΡΡ‚ΡŒΡŽ соврСмСнного мСталловСдСния. Для получСния количСствСнных Π΄Π°Π½Π½Ρ‹Ρ… ΠΈ построСния зависимостСй ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΡŽΡ‚ΡΡ мСталлографичСскиС ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΡ‹ ΠΎΠ±Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ, ΠΎΡ€ΠΈΠ΅Π½Ρ‚ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹Π΅ ΠΊΠ°ΠΊ Π½Π° Π½Π°ΡƒΡ‡Π½Ρ‹Π΅ исслСдования, Ρ‚Π°ΠΊ ΠΈ для использования Π² ΠΏΡ€ΠΎΠΌΡ‹ΡˆΠ»Π΅Π½Π½ΠΎΡΡ‚ΠΈ. Π‘ΠΎΠ»ΡŒΡˆΠΎΠΉ интСрСс Ρƒ потрСбитСля Π²Ρ‹Π·Ρ‹Π²Π°ΡŽΡ‚ ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΡ‹, способныС автоматичСски ΠΏΡ€ΠΎΠ²ΠΎΠ΄ΠΈΡ‚ΡŒ мСталлографичСский Π°Π½Π°Π»ΠΈΠ·. ΠŸΡ€ΠΈ Ρ€Π΅ΠΊΠ»Π°ΠΌΠ΅ Ρ‚Π°ΠΊΠΈΡ… ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌ Π·Π°Ρ‡Π°ΡΡ‚ΡƒΡŽ утвСрТдаСтся, Ρ‡Ρ‚ΠΎ ΠΎΠ½ΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‚ провСсти количСствСнный Π°Π½Π°Π»ΠΈΠ· структуры практичСски Π±Π΅Π· Π·Π°Ρ‚Ρ€Π°Ρ‚ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ. ЦСлью Π΄Π°Π½Π½ΠΎΠΉ Ρ€Π°Π±ΠΎΡ‚Ρ‹ являлось ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ Π·Π°Ρ‚Ρ€Π°Ρ‚ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ Π½Π° количСствСнный мСталлографичСский Π°Π½Π°Π»ΠΈΠ· Π² Π½Π΅ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Ρ… ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ°Ρ… ΠΎΠ±Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ, прСдставлСнных Π½Π° бСлорусском Ρ€Ρ‹Π½ΠΊΠ΅. Π Π°ΡΡΠΌΠ°Ρ‚Ρ€ΠΈΠ²Π°Π»ΠΈΡΡŒ связанныС ΠΈ нСсвязанныС мСталлографичСскиС ΠΎΠ±ΡŠΠ΅ΠΊΡ‚Ρ‹. Показано, Ρ‡Ρ‚ΠΎ для нСсвязанных ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² (ΠΏΠΎΡ€ΠΎΡˆΠΊΠΈ, Π³Ρ€Π°Ρ„ΠΈΡ‚ Ρ‡ΡƒΠ³ΡƒΠ½Π°) Π²ΠΎΠ·ΠΌΠΎΠΆΠ΅Π½ автоматичСский количСствСнный Π°Π½Π°Π»ΠΈΠ·; Π·Π°Ρ‚Ρ€Π°Ρ‚Ρ‹ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ ΠΏΡ€ΠΈ этом ΡΠΎΡΡ‚Π°Π²Π»ΡΡŽΡ‚ Π² ΠΏΡ€Π΅Π΄Π΅Π»Π°Ρ… ΠΌΠΈΠ½ΡƒΡ‚Ρ‹. Для связанных ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² (структуры ΠΌΠ΅Ρ‚Π°Π»Π»ΠΎΠ² ΠΈ сплавов послС мСталлографичСского травлСния) Π·Π°Ρ‚Ρ€Π°Ρ‚Ρ‹ Π²Ρ€Π΅ΠΌΠ΅Π½ΠΈ Π½Π° ΠΎΠ±Π½Π°Ρ€ΡƒΠΆΠ΅Π½ΠΈΠ΅ ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² ΠΈ ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½ΠΈΠ΅ Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… Π΄Π°Π½Π½Ρ‹Ρ… ΡΠΎΡΡ‚Π°Π²Π»ΡΡŽΡ‚ 10–40 ΠΌΠΈΠ½ ΠΈ Π±ΠΎΠ»Π΅Π΅ Π² зависимости ΠΎΡ‚ слоТности ΠΎΠ±ΡŠΠ΅ΠΊΡ‚Π°, Ρ‡Ρ‚ΠΎ Π½Π΅ΠΏΡ€ΠΈΠ΅ΠΌΠ»Π΅ΠΌΠΎ для заводских Π»Π°Π±ΠΎΡ€Π°Ρ‚ΠΎΡ€ΠΈΠΉ, ΠΊΠΎΡ‚ΠΎΡ€Ρ‹Π΅ Π°Π½Π°Π»ΠΈΠ·ΠΈΡ€ΡƒΡŽΡ‚ большоС количСство ΠΎΠ±Ρ€Π°Π·Ρ†ΠΎΠ² Π·Π° смСну. ΠŸΠΎΡΡ‚ΠΎΠΌΡƒ ΠΏΠΎΡ‚Π΅Π½Ρ†ΠΈΠ°Π»ΡŒΠ½Ρ‹ΠΌ потрСбитСлям ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌ ΠΎΠ±Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ мСталлографичСских ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ рСкомСндуСтся всСгда Ρ‚Ρ€Π΅Π±ΠΎΠ²Π°Ρ‚ΡŒ ΠΏΡ€Π΅Π΄ΠΌΠ΅Ρ‚Π½ΠΎΠΉ дСмонстрации возмоТности автоматичСских ΠΈΠ·ΠΌΠ΅Ρ€Π΅Π½ΠΈΠΉ ΠΏΡ€Π΅Π΄Π»Π°Π³Π°Π΅ΠΌΠΎΠ³ΠΎ ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ½ΠΎΠ³ΠΎ обСспСчСния

    Π‘Ρ‚Ρ€ΡƒΠΊΡ‚ΡƒΡ€Π½Ρ‹Π΅ прСвращСния Π² Ρ‚ΠΎΠ½ΠΊΠΈΡ… мСталличСских ΠΏΠ»Π΅Π½ΠΊΠ°Ρ… ΠΏΡ€ΠΈ ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠ½ΠΎΠΌ Π»Π°Π·Π΅Ρ€Π½ΠΎΠΌ воздСйствии

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    Processes occurring in metal films by laser irradiation are reviewed. Driving force of recrystallization, grain growth issues, education grooves of thermal etching, the formation of pores are considered. The preparation of nanoparticles in liquids by laser ablation is also addressed.РассмотрСны особСнности структурных ΠΏΡ€Π΅Π²Ρ€Π°Ρ‰Π΅Π½ΠΈΠΉ, происходящих Π² мСталличСских ΠΏΠ»Π΅Π½ΠΊΠ°Ρ… ΠΏΡ€ΠΈ ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠ½ΠΎΠΌ Π»Π°Π·Π΅Ρ€Π½ΠΎΠΌ воздСйствии, ΠΈ ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½ΠΈΠ΅ наночастиц Π² Тидкостях ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ Π»Π°Π·Π΅Ρ€Π½ΠΎΠΉ абляции. РассмотрСны Π΄Π²ΠΈΠΆΡƒΡ‰ΠΈΠ΅ силы рСкристаллизации, вопросы роста Π·Π΅Ρ€Π΅Π½, образования ΠΊΠ°Π½Π°Π²ΠΎΠΊ тСрмичСского травлСния, формирования ΠΏΠΎΡ€. ΠžΡ‚ΠΌΠ΅Ρ‡Π΅Π½Π° ΠΏΠ΅Ρ€ΡΠΏΠ΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ Ρ‚Π°ΠΊΠΈΡ… исслСдований Π² области свСрхкоротких ΠΈΠΌΠΏΡƒΠ»ΡŒΡΠΎΠ² воздСйствия

    Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films

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    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron- contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250o C to 900o C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy (DLTS) analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change of the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700o C. The gettering process is found to become reaction-limited at higher temperatures
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