412 research outputs found
Construction of Non-Perturbative, Unitary Particle-Antiparticle Amplitudes for Finite Particle Number Scattering Formalisms
Starting from a unitary, Lorentz invariant two-particle scattering amplitude
, we show how to use an identification and replacement process to construct a
unique, unitary particle-antiparticle amplitude. This process differs from
conventional on-shell Mandelstam s,t,u crossing in that the input and
constructed amplitudes can be off-diagonal and off-energy shell. Further,
amplitudes are constructed using the invariant parameters which are appropriate
to use as driving terms in the multi-particle, multichannel non-perturbative,
cluster decomposable, relativistic scattering equations of the Faddeev-type
integral equations recently presented by Alfred, Kwizera, Lindesay and Noyes.
It is therefore anticipated that when so employed, the resulting multi-channel
solutions will also be unitary. The process preserves the usual
particle-antiparticle symmetries. To illustrate this process, we construct a
J=0 scattering length model chosen for simplicity. We also exhibit a class of
physical models which contain a finite quantum mass parameter and are Lorentz
invariant. These are constructed to reduce in the appropriate limits, and with
the proper choice of value and sign of the interaction parameter, to the
asymptotic solution of the non-relativistic Coulomb problem, including the
forward scattering singularity, the essential singularity in the phase, and the
Bohr bound-state spectrum
Termination Reaction in the Anionic Polymerization of Methacrylonitrile
The anionic polymerization of methacrylonitrile initiated by
triethylphosphine in dimethylformamide was studied. Experimental
evidence for two mechanisms of termination reaction was obtained.
By addition of water or alcohol in polymerizing system the rate of
polymerization and molecular weight of polymethacrylon1itrile
decrease, which proves the termination reaction to be bimolecular
and proceed by interaction of the active carbanion with water or
alcohol. The rate constant for termination of free anions with water
was determined, k~,0 = 2.2 x 102 dm3 moP s-1β’ The termination
reaction could not be excluded by purification and prolonged drying
of all components of the system, which indicates that the second
mechanism of termination is operative as well. Conductivity measurements gave evidence for a monomolecular spontaneous reaction leading to deactivation of the anion
What have we already learned from the CMB?
The COBE satellite, and the DMR experiment in particular, was extraordinarily
successful. However, the DMR results were announced about 7 years ago, during
which time a great deal more has been learned about anisotropies in the Cosmic
Microwave Background (CMB). The CMB experiments currently being designed and
built, including long-duration balloons, interferometers, and two space
missions, promise to address several fundamental cosmological issues. We
present our evaluation of what we already know, what we are beginning to learn
now, and what the future may bring.Comment: 20 pages, 3 figures. Changes to match version accepted by PAS
Automatic Measurement in Metallography
Quantitative analysis of the structure of metals and alloys is an important part of modern metal science. To obtain quantitative data and build dependencies, metallographic image processing programs are used, oriented both for scientific research and for use in industry. Programs capable of automatically performing metallographic analysis are of great interest to consumers. When advertising such programs, it is often claimed that they allow quantitative analysis of the structure with virtually no time. The purpose of this work was to determine the time spent on quantitative metallographic analysis in some image processing programs presented on the Belarusian market. Connected and unconnected metallographic objects were considered. It is shown that automatic quantitative analysis is possible for unconnected objects (powders, cast iron graphite). The time required is within a minute. For connected objects (structures of metals and alloys after metallographic etching), the time required to detect objects and obtain digital data is 10β40 min or more, depending on the complexity of the object, which is unacceptable for factory laboratories that analyze a large number of samples per shift. Therefore, it is recommended that potential users of metallographic image processing software always require a substantive demonstration of the automatic measurement capabilities of the proposed software
Evolution of vacancy-related defects upon annealing of ion-implanted germanium
Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1Γ10 exp 12βcm expβ2 and 4Γ10 exp 14βcm expβ2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1Γ10 exp 13βcm exp β2 and a fluence of 1Γ10 exp 14βcm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200β400βΒ°C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Peer reviewe
Multiphoton Transitions in a Spin System Driven by Strong Bichromatic Field
EPR transient nutation spectroscopy is used to measure the effective field
(Rabi frequency) for multiphoton transitions in a two-level spin system
bichromatically driven by a transverse microwave (MW) field and a longitudinal
radio-frequency (RF) field. The behavior of the effective field amplitude is
examined in the case of a relatively strong MW field, when the derivation of
the effective Hamiltonian cannot be reduced to first-order perturbation theory
in w_{1} / w_{rf} (w_{1} is the microwave Rabi frequency, w_{rf} is the RF
frequency). Experimental results are consistently interpreted by taking into
account the contributions of second and third order in w_{1} / w_{rf} evaluated
by Krylov-Bogolyubov-Mitropolsky averaging. In the case of inhomogeneously
broadened EPR line, the third-order correction modifies the nutation frequency,
while the second-order correction gives rise to a change in the nutation
amplitude due to a Bloch-Siegert shift.Comment: 7 pages, 6 figure
ΠΠ²ΡΠΎΠΌΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ Π² ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΠΈ
Quantitative analysis of the structure of metals and alloys is an important part of modern metal science. To obtain quantitative data and build dependencies, metallographic image processing programs are used, oriented both for scientific research and for use in industry. Programs capable of automatically performing metallographic analysis are of great interest to consumers. When advertising such programs, it is often claimed that they allow quantitative analysis of the structure with virtually no time. The purpose of this work was to determine the time spent on quantitative metallographic analysis in some image processing programs presented on the Belarusian market. Connected and unconnected metallographic objects were considered. It is shown that automatic quantitative analysis is possible for unconnected objects (powders, cast iron graphite). The time required is within a minute. For connected objects (structures of metals and alloys after metallographic etching), the time required to detect objects and obtain digital data is 10β40 min or more, depending on the complexity of the object, which is unacceptable for factory laboratories that analyze a large number of samples per shift. Therefore, it is recommended that potential users of metallographic image processing software always require a substantive demonstration of the automatic measurement capabilities of the proposed software.ΠΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΡΡΡΡΠΊΡΡΡΡ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ² ΠΈ ΡΠΏΠ»Π°Π²ΠΎΠ² ΡΠ²Π»ΡΠ΅ΡΡΡ Π²Π°ΠΆΠ½ΠΎΠΉ ΡΠ°ΡΡΡΡ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ²Π΅Π΄Π΅Π½ΠΈΡ. ΠΠ»Ρ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΡ
Π΄Π°Π½Π½ΡΡ
ΠΈ ΠΏΠΎΡΡΡΠΎΠ΅Π½ΠΈΡ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠ΅ΠΉ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΡ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ, ΠΎΡΠΈΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½Π½ΡΠ΅ ΠΊΠ°ΠΊ Π½Π° Π½Π°ΡΡΠ½ΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ, ΡΠ°ΠΊ ΠΈ Π΄Π»Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ Π² ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΡΡΠΈ. ΠΠΎΠ»ΡΡΠΎΠΉ ΠΈΠ½ΡΠ΅ΡΠ΅Ρ Ρ ΠΏΠΎΡΡΠ΅Π±ΠΈΡΠ΅Π»Ρ Π²ΡΠ·ΡΠ²Π°ΡΡ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΡ, ΡΠΏΠΎΡΠΎΠ±Π½ΡΠ΅ Π°Π²ΡΠΎΠΌΠ°ΡΠΈΡΠ΅ΡΠΊΠΈ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΡΡ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠΉ Π°Π½Π°Π»ΠΈΠ·. ΠΡΠΈ ΡΠ΅ΠΊΠ»Π°ΠΌΠ΅ ΡΠ°ΠΊΠΈΡ
ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌ Π·Π°ΡΠ°ΡΡΡΡ ΡΡΠ²Π΅ΡΠΆΠ΄Π°Π΅ΡΡΡ, ΡΡΠΎ ΠΎΠ½ΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ ΠΏΡΠΎΠ²Π΅ΡΡΠΈ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΡΡΡΡΠΊΡΡΡΡ ΠΏΡΠ°ΠΊΡΠΈΡΠ΅ΡΠΊΠΈ Π±Π΅Π· Π·Π°ΡΡΠ°Ρ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ. Π¦Π΅Π»ΡΡ Π΄Π°Π½Π½ΠΎΠΉ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»ΠΎΡΡ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ Π·Π°ΡΡΠ°Ρ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Π½Π° ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΠΉ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠΉ Π°Π½Π°Π»ΠΈΠ· Π² Π½Π΅ΠΊΠΎΡΠΎΡΡΡ
ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ°Ρ
ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ, ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Π½ΡΡ
Π½Π° Π±Π΅Π»ΠΎΡΡΡΡΠΊΠΎΠΌ ΡΡΠ½ΠΊΠ΅. Π Π°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π»ΠΈΡΡ ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ ΠΈ Π½Π΅ΡΠ²ΡΠ·Π°Π½Π½ΡΠ΅ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΎΠ±ΡΠ΅ΠΊΡΡ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π΄Π»Ρ Π½Π΅ΡΠ²ΡΠ·Π°Π½Π½ΡΡ
ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² (ΠΏΠΎΡΠΎΡΠΊΠΈ, Π³ΡΠ°ΡΠΈΡ ΡΡΠ³ΡΠ½Π°) Π²ΠΎΠ·ΠΌΠΎΠΆΠ΅Π½ Π°Π²ΡΠΎΠΌΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΠΉ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΠΉ Π°Π½Π°Π»ΠΈΠ·; Π·Π°ΡΡΠ°ΡΡ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ ΠΏΡΠΈ ΡΡΠΎΠΌ ΡΠΎΡΡΠ°Π²Π»ΡΡΡ Π² ΠΏΡΠ΅Π΄Π΅Π»Π°Ρ
ΠΌΠΈΠ½ΡΡΡ. ΠΠ»Ρ ΡΠ²ΡΠ·Π°Π½Π½ΡΡ
ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² (ΡΡΡΡΠΊΡΡΡΡ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ² ΠΈ ΡΠΏΠ»Π°Π²ΠΎΠ² ΠΏΠΎΡΠ»Π΅ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΡΠ°Π²Π»Π΅Π½ΠΈΡ) Π·Π°ΡΡΠ°ΡΡ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Π½Π° ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΈΠ΅ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² ΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΠ΅ ΡΠΈΡΡΠΎΠ²ΡΡ
Π΄Π°Π½Π½ΡΡ
ΡΠΎΡΡΠ°Π²Π»ΡΡΡ 10β40 ΠΌΠΈΠ½ ΠΈ Π±ΠΎΠ»Π΅Π΅ Π² Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ ΠΎΡ ΡΠ»ΠΎΠΆΠ½ΠΎΡΡΠΈ ΠΎΠ±ΡΠ΅ΠΊΡΠ°, ΡΡΠΎ Π½Π΅ΠΏΡΠΈΠ΅ΠΌΠ»Π΅ΠΌΠΎ Π΄Π»Ρ Π·Π°Π²ΠΎΠ΄ΡΠΊΠΈΡ
Π»Π°Π±ΠΎΡΠ°ΡΠΎΡΠΈΠΉ, ΠΊΠΎΡΠΎΡΡΠ΅ Π°Π½Π°Π»ΠΈΠ·ΠΈΡΡΡΡ Π±ΠΎΠ»ΡΡΠΎΠ΅ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²ΠΎ ΠΎΠ±ΡΠ°Π·ΡΠΎΠ² Π·Π° ΡΠΌΠ΅Π½Ρ. ΠΠΎΡΡΠΎΠΌΡ ΠΏΠΎΡΠ΅Π½ΡΠΈΠ°Π»ΡΠ½ΡΠΌ ΠΏΠΎΡΡΠ΅Π±ΠΈΡΠ΅Π»ΡΠΌ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΌΠ΅ΡΠ°Π»Π»ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ ΡΠ΅ΠΊΠΎΠΌΠ΅Π½Π΄ΡΠ΅ΡΡΡ Π²ΡΠ΅Π³Π΄Π° ΡΡΠ΅Π±ΠΎΠ²Π°ΡΡ ΠΏΡΠ΅Π΄ΠΌΠ΅ΡΠ½ΠΎΠΉ Π΄Π΅ΠΌΠΎΠ½ΡΡΡΠ°ΡΠΈΠΈ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΠΈ Π°Π²ΡΠΎΠΌΠ°ΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΉ ΠΏΡΠ΅Π΄Π»Π°Π³Π°Π΅ΠΌΠΎΠ³ΠΎ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ½ΠΎΠ³ΠΎ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠ΅Π½ΠΈΡ
Π‘ΡΡΡΠΊΡΡΡΠ½ΡΠ΅ ΠΏΡΠ΅Π²ΡΠ°ΡΠ΅Π½ΠΈΡ Π² ΡΠΎΠ½ΠΊΠΈΡ ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ ΠΏΠ»Π΅Π½ΠΊΠ°Ρ ΠΏΡΠΈ ΠΈΠΌΠΏΡΠ»ΡΡΠ½ΠΎΠΌ Π»Π°Π·Π΅ΡΠ½ΠΎΠΌ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΠΈ
Processes occurring in metal films by laser irradiation are reviewed. Driving force of recrystallization, grain growth issues, education grooves of thermal etching, the formation of pores are considered. The preparation of nanoparticles in liquids by laser ablation is also addressed.Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Ρ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠΈ ΡΡΡΡΠΊΡΡΡΠ½ΡΡ
ΠΏΡΠ΅Π²ΡΠ°ΡΠ΅Π½ΠΈΠΉ, ΠΏΡΠΎΠΈΡΡ
ΠΎΠ΄ΡΡΠΈΡ
Π² ΠΌΠ΅ΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠ»Π΅Π½ΠΊΠ°Ρ
ΠΏΡΠΈ ΠΈΠΌΠΏΡΠ»ΡΡΠ½ΠΎΠΌ Π»Π°Π·Π΅ΡΠ½ΠΎΠΌ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΠΈ, ΠΈ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΠ΅ Π½Π°Π½ΠΎΡΠ°ΡΡΠΈΡ Π² ΠΆΠΈΠ΄ΠΊΠΎΡΡΡΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π»Π°Π·Π΅ΡΠ½ΠΎΠΉ Π°Π±Π»ΡΡΠΈΠΈ. Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Ρ Π΄Π²ΠΈΠΆΡΡΠΈΠ΅ ΡΠΈΠ»Ρ ΡΠ΅ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΠ·Π°ΡΠΈΠΈ, Π²ΠΎΠΏΡΠΎΡΡ ΡΠΎΡΡΠ° Π·Π΅ΡΠ΅Π½, ΠΎΠ±ΡΠ°Π·ΠΎΠ²Π°Π½ΠΈΡ ΠΊΠ°Π½Π°Π²ΠΎΠΊ ΡΠ΅ΡΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΡΠ°Π²Π»Π΅Π½ΠΈΡ, ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΏΠΎΡ. ΠΡΠΌΠ΅ΡΠ΅Π½Π° ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΡΠ°ΠΊΠΈΡ
ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠΉ Π² ΠΎΠ±Π»Π°ΡΡΠΈ ΡΠ²Π΅ΡΡ
ΠΊΠΎΡΠΎΡΠΊΠΈΡ
ΠΈΠΌΠΏΡΠ»ΡΡΠΎΠ² Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ
Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films
It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron- contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250o C to 900o C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy (DLTS) analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change of the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700o C. The gettering process is found to become reaction-limited at higher temperatures
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