Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from $n$-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.Comment: 4 pages, 2 figure

High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins

New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room-temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions at relatively large bias voltage.Comment: 5 pages, 2 figures, (v2) new plot with a dependence of current J on magnetic field H added in Fig.2 (top panel), minor amendments in the text; (v3) minor typos corrected. To appear in Phys. Rev. Letter

Complete spin polarization of electrons in semiconductor layers and quantum dots

We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved if the thin layers or quantum dots are placed between two ferromagnetic metal contacts with moderate spin injection coefficients and antiparallel magnetizations. The sign of the spin polarization is determined by the direction of the current. Aplications of this effect in spintronics and quantum information processing are discussed

Spin magnetotransport in two-dimensional hole systems

Spin current of two-dimensional holes occupying the ground-state subband in an asymmetric quantum well and interacting with static disorder potential is calculated in the presence of a weak magnetic field H perpendicular to the well plane. Both spin-orbit coupling and Zeeman coupling are taken into account. It is shown that the applied electric field excites both the transverse (spin-Hall) and diagonal spin currents, the latter changes its sign at a finite H and becomes greater than the spin-Hall current as H increases. The effective spin-Hall conductivity introduced to describe the spin response in Hall bars is considerably enhanced by the magnetic field in the case of weak disorder and demonstrates a non-monotonic dependence on H.Comment: 4 pages, 2 figures, published in Phys. Rev.

Triplet supercurrent in ferromagnetic Josephson junctions by spin injection

We show that injecting nonequilibrium spins into the superconducting leads strongly enhances the stationary Josephson current through a superconductor-ferromagnet-superconductor junction. The resulting long-range super-current through a ferromagnet is carried by triplet Cooper pairs that are formed in s-wave superconductors by the combined effects of spin injection and exchange interaction. We quantify the exchange interaction in terms of Landau Fermi-liquid factors. The magnitude and direction of the long-range Josephson current can be manipulated by varying the angles of the injected polarizations with respect to the magnetization in the ferromagnet

Drift-diffusion model for spin-polarized transport in a non-degenerate 2DEG controlled by a spin-orbit interaction

We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit interaction. In a studied transport regime an electron momentum scattering rate is appreciably faster than spin dynamics. A set of transport equations is defined in terms of a particle density, spin density, and respective fluxes. The developed model allows studying of coherent dynamics of a non-equilibrium spin polarization. As an example, we consider a stationary transport regime for a heterostructure grown along the (0, 0, 1) crystallographic direction. Due to the interplay of the Rashba and Dresselhaus spin-orbit terms spin dynamics strongly depends on a transport direction. The model is consistent with results of pulse-probe measurement of spin coherence in strained semiconductor layers. It can be useful for studying properties of spin-polarized transport and modeling of spintronic devices operating in the diffusive transport regime.Comment: 16 pages, 3 figure

Multi-subband effect in spin dephasing in semiconductor quantum wells

Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric field (in hot-electron regime) on the spin kinetics are thoroughly investigated. It is shown that due to the strong inter-subband scattering, the spin procession and the spin dephasing rate of electrons in different subbands are almost identical despite the large difference in the D'yakonov-Perel' (DP) terms of different subbands. It is also shown that for quantum wells with small well width at temperatures where only the lowest subband is occupied, the spin dephasing time increases with the temperature as well as the applied in-plane electric field until the contribution from the second subband is no longer negligible. For wide quantum wells the spin dephasing time tends to decrease with the temperature and the electric field.Comment: 6 pages, 4 figures in eps forma

Spin orientation of a two-dimensional electron gas by a high-frequency electric field

Coupling of spin states and space motion of conduction electrons due to spin-orbit interaction opens up possibilities for manipulation of the electron spins by electrical means. It is shown here that spin orientation of a two-dimensional electron gas can be achieved by excitation of the carriers with a linearly polarized high-frequency electric field. In (001)-grown quantum well structures excitation with in-plane ac electric field induces orientation of the electron spins along the quantum well normal, with the spin sign and the magnitude depending on the field polarization.Comment: 5 pages, 1 figur

Frequency dependence of induced spin polarization and spin current in quantum wells

Dynamic response of two-dimensional electron systems with spin-orbit interaction is studied theoretically on the basis of quantum kinetic equation, taking into account elastic scattering of electrons. The spin polarization and spin current induced by the applied electric field are calculated for the whole class of electron systems described by p-linear spin-orbit Hamiltonians. The absence of nonequilibrium intrinsic static spin currents is confirmed for these systems with arbitrary (nonparabolic) electron energy spectrum. Relations between the spin polarization, spin current, and electric current are established. The general results are applied to the quantum wells grown in [001] and [110] crystallographic directions, with both Rashba and Dresselhaus types of spin-orbit coupling. It is shown that the existence of the fixed (momentum-independent) precession axes in [001]-grown wells with equal Rashba and Dresselhaus spin velocities or in symmetric [110]-grown wells leads to vanishing spin polarizability at arbitrary frequency of the applied electric field. This property is explained by the absence of Dyakonov-Perel-Kachorovskii spin relaxation for the spins polarized along these precession axes. As a result, a considerable frequency dispersion of spin polarization at very low frequency in the vicinity of the fixed precession axes is predicted. Possible effects of extrinsic spin-orbit coupling on the obtained results are discussed.Comment: 14 pages, 6 figures; published with minor corrections in Phys. Rev.

Spin-density induced by electromagnetic wave in two-dimensional electron gas with both Rashba and Dresselhaus spin-orbit couplings

We consider the magnetic response of a two-dimensional electron gas (2DEG) with both Rashba and Dresselhaus spin-orbit coupling to a microwave excitation. We generalize the results of [A. Shnirman and I. Martin, Europhys. Lett. 78, 27001 (2007).], where pure Rashba coupling was studied. We observe that the microwave with the in-plane electric field and the out-of-plane magnetic field creates an out-of-plane spin polarization. The effect is more prominent in clean systems with resolved spin-orbit-split subbands. Considered as response to the microwave magnetic field, the spin-orbit contribution to the magnetization far exceeds the usual Zeeman contribution in the clean limit. The effect vanishes when the Rashba and the Dresselhaus couplings have equal strength.Comment: 4 pages, 2 figure