Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.Comment: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in pres

Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field

We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequently, the electronic system becomes a single layer which leads to a sharp step in the density of electron states and to an additional minimum in the magnetoresistance curve.Comment: 3 pages, 3 figure

Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.Comment: 4 pages, 2 figure

In-Plane Magnetic Field Induced Anisotropy of 2D Fermi Contours and the Field Dependent Cyclotron Mass

The electronic structure of a 2D gas subjected to a tilted magnetic field, with a strong component parallel to the GaAs/AlGaAs interface and a weak component oriented perpendicularly, is studied theoretically. It is shown that the parallel field component modifies the originally circular shape of a Fermi contour while the perpendicular component drive an electron by the Lorentz force along a Fermi line with a cyclotron frequency given by its shape. The corresponding cyclotron effective mass is calculated self-consistently for several concentrations of 2D carriers as a function of the in-plane magnetic field. The possibility to detect its field-induced deviations from the zero field value experimentally is discussed.Comment: written in LaTeX, 9 pages, 4 figures (6 pages) in 1 PS file (compressed and uuencoded) available on request from [email protected], SM-JU-93-

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.Comment: 6 pages, 5 figure

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.Comment: 9 pages, 9 figure

Effect of inversion asymmetry on the intrinsic anomalous Hall effect in ferromagnetic (Ga,Mn)As

The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to the description of this phenomenon. Using different k.p and tight-binding computational schemes, we capture the strong effect of the bulk inversion asymmetry on the Berry curvature and the anomalous Hall conductivity. At the same time, we find it not to affect other important characteristics of (Ga,Mn)As, namely the Curie temperature and uniaxial anisotropy fields. Our results extend the established theories of the anomalous Hall effect in ferromagnetic semiconductors and shed new light on its puzzling nature