Adsorption of HO_x on Aerosol Surfaces: Implications for the Atmosphere of Mars

The potential impact of heterogeneous chemistry on the abundance and distribution of HO_x in the atmosphere of Mars has been assessed by combining observational data of dust and ice aerosol distributions with an updated photochemical model. Critical parameters include the altitude distributions of aerosols, and the surface loss coefficients (γ) of HO_2 on dust and ice in the lower atmosphere, and H on ice above 40 km. We find that adsorption of HO_2 on dust (γHO_2 ≥ 0.01), or ice near 30 km (γHO_2 ≥ 0.1), can deplete OH abundances in the lower atmosphere by 10% or more. Such depletions approach those obtained by lowering the water vapor abundance by an order of magnitude below the global average observed by Viking (≈ 25%). Since the oxidation of CO is catalyzed by HO_x in the lower atmosphere via the reaction CO + OH → CO_2 + H, loss of OH due to adsorption of HO_2 on dust or ice at low altitudes could have a significant effect on the ratio CO : CO_2. The adsorption of H on ice at 50 km (γ_H ≥ 0.01) can result in even larger OH depletions. However, this effect is localized to altitudes > 40 km, where CO oxidation is relatively unimportant. Laboratory data suggest that γHO_2 ≈ 0.01 is a reasonable estimate for adsorption on dust. Larger values are plausible, but are not strongly supported by experimental evidence. The reactivity of HO_2 on ice is unknown, while γH on ice appears to be < 0.001. There is a need for measurements of HO_x adsorption on surfaces representative of Martian aerosols at temperatures < 220 K

Influence of Magnetism on Phonons in CaFe2As2 Via Inelastic X-ray Scattering

In the iron pnictides, the strong sensitivity of the iron magnetic moment to the arsenic position suggests a significant relationship between phonons and magnetism. We measured the phonon dispersion of several branches in the high temperature tetragonal phase of CaFe2As2 using inelastic x-ray scattering on single-crystal samples. These measurements were compared to ab initio calculations of the phonons. Spin polarized calculations imposing the antiferromagnetic order present in the low temperature orthorhombic phase dramatically improve agreement between theory and experiment. This is discussed in terms of the strong antiferromagnetic correlations that are known to persist in the tetragonal phase.Comment: 4 pages, 3 figures; added additional information and references about spin fluctuation

Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ using a Reactive High-Temperature Porogen, TEPSS

A high-temperature reactive porogen, triethoxy(polystyrene)silane (TEPSS) (M w =3,500 g/mole), suitable for late-porogen removal integration scheme has been synthesized in p-xylene via atom transfer radical polymerization. TEPSS was then grafted onto poly(methyl-silsesquioxane) (MSQ) matrix (k=2.9) to circumvent possible phase separation between matrix and porogen in the hybrid approach and porogen aggregation. Our results shows porous low-k MSQ films possess uniform pore size, 24 nm for porosity up to 40%, primarily due to low PDI and reactive porogen, and the dielectric constant is decreased to 2.37 at 40% porosity. In addition, less porogen aggregation was observed at porogen loading ~40 v%

Spin states of the first four holes in a silicon nanowire quantum dot

We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire.Comment: 24 pages, 8 figures, both including supporting informatio

Active Creation of Instrinsically Localized Vibrations in Uranium Using X-Ray and Neutron Scattering

In real materials, nonlinear forces cause the frequencies of vibrating atoms to depend on amplitude. As a consequence, a large-amplitude fluctuation on the scale of the atom spacing can develop a frequency that does not resonate with the normal modes, causing energy to become trapped in an intrinsically localized mode (ILM)--also called 'discrete breather' or 'lattice soliton'. As temperature is increased, entropy is expected to stabilize increased concentrations of these random hotspots. This mechanism, which spontaneously concentrates energy, has been observed in analogous systems on a larger scale, but direct sightings at the atomic scale have proved difficult. Two challenges have hampered progress: (1) the need to separate ILMs from modes associated with crystal imperfections, and (2) complications that arise at high temperatures, including feature broadening and multiphonon processes. Here we solve both of these problems by actively creating ILMs at low temperatures in {alpha}-uranium using high-energy inelastic x-ray and neutron scattering. The ILM creation excitation occurs at energies ten times higher than conventional lattice excitations, cleanly separating it from modes associated with crystal imperfections. The discovery of this excitation not only proves the existence of ILMs in uranium but also opens up a new route for finding ILMs in other materials and, in the process, a new area for spectroscopy

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m

Non-Equilibrium Creation of Intrinsically Localized Vibrations in Uranium Using X-Ray and Neutron Scattering

In an anharmonic crystal, large-amplitude vibrational fluctuations on the scale of the lattice spacing can develop frequencies that do not resonate with the normal modes, causing energy to become trapped in intrinsically localized modes (ILMs)--also called 'discrete breathers' or 'lattice solitons'. This mechanism has been observed in analogous systems on a larger scale, but unambiguous sightings in atomic lattice vibrations, where quantum mechanics may play a role, have proved difficult. Two challenges have hampered progress: (1) the need to separate ILMs from defect modes, and (2) complications that arise at high temperatures, including feature broadening and multiphonon processes. Here we solve these problems by using x-ray and neutron scattering to induce ILM-forming amplitude fluctuations in uranium at low temperatures, thereby creating nonequilibrium ILMs. Creation of ILMs occurs at a discrete energy, indicating an unexpected quantum character to ILM formation and greatly simplifying detection

Security and Privacy Issues in Wireless Mesh Networks: A Survey

This book chapter identifies various security threats in wireless mesh network (WMN). Keeping in mind the critical requirement of security and user privacy in WMNs, this chapter provides a comprehensive overview of various possible attacks on different layers of the communication protocol stack for WMNs and their corresponding defense mechanisms. First, it identifies the security vulnerabilities in the physical, link, network, transport, application layers. Furthermore, various possible attacks on the key management protocols, user authentication and access control protocols, and user privacy preservation protocols are presented. After enumerating various possible attacks, the chapter provides a detailed discussion on various existing security mechanisms and protocols to defend against and wherever possible prevent the possible attacks. Comparative analyses are also presented on the security schemes with regards to the cryptographic schemes used, key management strategies deployed, use of any trusted third party, computation and communication overhead involved etc. The chapter then presents a brief discussion on various trust management approaches for WMNs since trust and reputation-based schemes are increasingly becoming popular for enforcing security in wireless networks. A number of open problems in security and privacy issues for WMNs are subsequently discussed before the chapter is finally concluded.Comment: 62 pages, 12 figures, 6 tables. This chapter is an extension of the author's previous submission in arXiv submission: arXiv:1102.1226. There are some text overlaps with the previous submissio

Cytoplasmic p53 couples oncogene-driven glucose metabolism to apoptosis and is a therapeutic target in glioblastoma.

Cross-talk among oncogenic signaling and metabolic pathways may create opportunities for new therapeutic strategies in cancer. Here we show that although acute inhibition of EGFR-driven glucose metabolism induces only minimal cell death, it lowers the apoptotic threshold in a subset of patient-derived glioblastoma (GBM) cells. Mechanistic studies revealed that after attenuated glucose consumption, Bcl-xL blocks cytoplasmic p53 from triggering intrinsic apoptosis. Consequently, targeting of EGFR-driven glucose metabolism in combination with pharmacological stabilization of p53 with the brain-penetrant small molecule idasanutlin resulted in synthetic lethality in orthotopic glioblastoma xenograft models. Notably, neither the degree of EGFR-signaling inhibition nor genetic analysis of EGFR was sufficient to predict sensitivity to this therapeutic combination. However, detection of rapid inhibitory effects on [18F]fluorodeoxyglucose uptake, assessed through noninvasive positron emission tomography, was an effective predictive biomarker of response in vivo. Together, these studies identify a crucial link among oncogene signaling, glucose metabolism, and cytoplasmic p53, which may potentially be exploited for combination therapy in GBM and possibly other malignancies