Influence of engineered interfaces on residual stresses and mechanical response in metal matrix composites

Because of the inherent coefficient of thermal expansion (CTE) mismatch between fiber and matrix within metal and intermetallic matrix composite systems, high residual stresses can develop under various thermal loading conditions. These conditions include cooling from processing temperature to room temperature as well as subsequent thermal cycling. As a result of these stresses, within certain composite systems, radial, circumferential, and/or longitudinal cracks have been observed to form at the fiber matrix interface region. A number of potential solutions for reducing this thermally induced residual stress field have been proposed recently. Examples of some potential solutions are high CTE fibers, fiber preheating, thermal anneal treatments, and an engineered interface. Here the focus is on designing an interface (by using a compensating/compliant layer concept) to reduce or eliminate the thermal residual stress field and, therefore, the initiation and propagation of cracks developed during thermal loading. Furthermore, the impact of the engineered interface on the composite's mechanical response when subjected to isothermal mechanical load histories is examined

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching

Be-implanted (GaAl)As stripe geometry lasers

GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls