Giant Modal Gain, Amplified Surface Plasmon Polariton Propagation, and Slowing Down of Energy Velocity in a Metal-Semiconductor-Metal Structure

We investigated surface plasmon polariton (SPP) propagation in a metal-semiconductor-metal structure where semiconductor is highly excited to have optical gain. We show that near the SPP resonance, the imaginary part of the propagation wavevector changes from positive to hugely negative, corresponding to an amplified SPP propagation. The SPP experiences a giant gain that is 1000 times of material gain in the excited semiconductor. We show that such a giant gain is related to the slowing down of average energy propagation in the structur

School Leadership Interventions Under the Every Student Succeeds Act: Evidence Review - Updated and Expanded

This RAND analysis offers guidance to states and districts on how they can choose to use the Every Student Succeeds Act to help achieve their school improvement goals by supporting principals and other school leaders

Electroreflectance spectroscopy in self-assembled quantum dots: lens symmetry

Modulated electroreflectance spectroscopy $\Delta R/R$ of semiconductor self-assembled quantum dots is investigated. The structure is modeled as dots with lens shape geometry and circular cross section. A microscopic description of the electroreflectance spectrum and optical response in terms of an external electric field (${\bf F}$) and lens geometry have been considered. The field and lens symmetry dependence of all experimental parameters involved in the $\Delta R/R$ spectrum have been considered. Using the effective mass formalism the energies and the electronic states as a function of ${\bf F}$ and dot parameters are calculated. Also, in the framework of the strongly confined regime general expressions for the excitonic binding energies are reported. Optical selection rules are derived in the cases of the light wave vector perpendicular and parallel to $$. Detailed calculation of the Seraphin coefficients and electroreflectance spectrum are performed for the InAs and CdSe nanostructures. Calculations show good agreement with measurements recently performed on CdSe/ZnSe when statistical distribution on size is considered, explaining the main observed characteristic in the electroreflectance spectra

Effects of peroxisome proliferator-activated receptor- activation in endothelin-dependent hypertension

Aims We analysed the chronic effects of the peroxisome proliferator-activated receptor β/δ (PPAR-β) agonist GW0742 on the renin-independent hypertension induced by deoxycorticosterone acetate (DOCA)-salt. Methods and results Rats were treated for 5 weeks with: control-vehicle, control-GW0742 (5 or 20 mg kg−1 day−1), DOCA-vehicle, DOCA-GW0742 (5 or 20 mg kg−1 day−1), DOCA-GSK0660 (1 mg kg−1 day−1), and DOCA-GSK0660-GW0742. Rats receiving DOCA-vehicle showed increased systolic blood pressure, left ventricular and kidney weight indices, endothelin-1 (ET-1), and malondialdehyde plasma levels, urinary iso-PGF2α excretion, impaired endothelium-dependent relaxation to acetylcholine, and contraction to ET-1 when compared with controls. Aortic reactive oxygen species content, NADPH oxidase activity, and p47phox, p22phox, NOX-4, glutathione peroxidase 1, hemeoxygenase-1, and preproET-1 expression were increased, whereas catalase and regulators of G protein-coupled signalling proteins (RGS)5 expression were decreased in the DOCA-vehicle group. GW0742 prevented the development of hypertension in a dose-dependent manner but the reduction of renal and cardiac hypertrophy, systemic and vascular oxidative stress markers, and improvement of endothelial dysfunction were only observed after the higher dose. GW0742, at 20 mg kg−1 day−1, attenuated ET-1 contraction by increasing RGS5 expression and restored the intracellular redox balance by reducing NADPH-oxidase activity, and by increasing the antioxidant genes expression. The PPAR-β antagonist GSK0660 prevented all vascular changes induced by GW0742 but not its antihypertensive effects. Conclusion Vascular protective effects of GW0742 operate via PPAR-β by interference with the ET-1 signalling as a result of increased expression of RGS5 and up-regulation of antioxidant genes and via PPAR-β-independent mechanisms to decrease blood pressure

Midinfrared intersubband absorption in ZnxCd1−xSe/Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures

The authors report the observation of intersubband absorption in ZnxCd(1−x)Se/Znx′Cdy′Mg(1−x′−y′)Semultiple quantum wells. Lattice-matched samples were grown by molecular beam epitaxy on InP (001) substrates. Photoluminescence measurements indicate that the samples have excellent material quality. The peak absorption wavelengths measured by Fourier transform infrared spectroscopy are 3.99 and 5.35μm for two samples with ZnxCd(1−x)Se well widths of 28 and 42Å, respectively. These values fall within the 3–5μm wavelength range, which is of interest for midinfrared intersubband devices, such as quantum cascade lasers and quantum well infrared photodetectors. Their experimental results fit well with theoretical predictions based on the envelope function approximation. The results indicate that these wide band gap II-VI materials are very promising for midinfrared intersubband device applications

Backilluminated ultraviolet photodetector based on GaN/AlGaN multiple quantum wells

The operation of backilluminated ultraviolet (UV)photodetector based on GaN/Al0.27Ga0.73Nmultiple quantum wells(MQWs) is reported. The MQW structure was deposited on a 1-μm-thick Al0.35Ga0.65Nbuffer layer which was epitaxied on a sapphire substrate. Coplanar Ohmic contacts were made on the top side of the MQW structure. By illuminating the Ohmic contact positions from the backside of the detector, a flat and narrow band spectral response is achieved in the UV wavelength range from 297 nm to 352 nm. The electron-heavy hole absorption in the MQW region produces the sharp long-wavelength cutoff at 352 nm and the band-to-band absorption of the Al0.35Ga0.65Nbuffer layer introduces the sharp short-wavelength cutoff at 297 nm. The polarization-induced electric fields result in a redshift of the long-wavelength cutoff. The response time is measured to be RC limited and determined to be 5 μs at a 50 Ω load

Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain

We report on a backilluminated GaN/Al0.18Ga0.82Nheterojunction ultraviolet (UV)photodetector with high internal gain based on metal-semiconductor-metal structures. A narrow band pass spectral response between 365 and 343 nm was achieved. When operating in dc mode, the responsivity reaches up to the order of 102 A/W under weak UVillumination, which is due to enormous internal gain up to 103. The linear dependence of photocurrent on bias and its square root dependence on optical power are found and explained by a trapping and recombination model. The high photocurrent gain is attributed to trapping and recombination centers with an acceptor character induced by dislocations in GaN

Spectroscopy and carrier dynamics in CdSe self-assembled quantum dots embedded in ZnxCdyMg1−x−ySe

Time-resolved and steady-state photoluminescence,reflectivity, and absorption experiments were performed on CdSequantum dots in ZnxCdyMg1−x−ySe barriers. Studies of the capture times of the photoexcited carriers into the quantum dots and of electron-hole recombination times inside the dots were performed. Photoluminescence rise time yielded capture times from 20 ps to 30 ps. All samples exhibit fast and slow photoluminescence decays, consistent with observing two independent but energetically overlapping decays. The faster relaxation times for the sample emitting in the blue range is 90 ps, whereas for the two samples emitting in the green it is 345 ps and 480 ps. The slower relaxation times for the sample emitting in blue is 310 ps, whereas for the samples emitting in green is 7.5 ns. These results are explained on the basis of the structural differences among the quantum-dot samples