749 research outputs found
Analysis and Measurement of coupling effects in the transfer line from PS to SPS for the LHC proton beam
The tight emittance budget for injection into the LHC demands an accurate matching of the transfer line from the PS to the SPS to minimise blow-up at injection into the SPS. Precise two-dimensional beam profile measurements with Optical Transition Radiation (OTR) screens have recently pointed towards the presence of coupling in the LHC beam transfer. The new algorithms developed to analyse the profile data from the OTR screens and to quantify the observed coupling (in particular the determination of the complete 5?5 beam covariance matrix) are discussed. The results of the measurements and their dependence on the extraction conditions in the PS (trajectory and momentum) are presented and discussed in detail
Measurements of the SPS transverse impedance in 2000
We report on measurements of coherent tune shifts, head-tail growth rates, and current-dependent betatron phase advances at the CERN SPS in the year 2000. Comparing results obtained at two different energies shows that there is no notable contribution from space charge. Within the measurement resolution the impedance is the same as in 1999, consistent with the expected small effect from changes to ony a small number of pumping ports. In 2000, data were taken over an expanded range of chromaticities, which increases the sensitivity to the impedance frequency distribution. Measuremeents of the current-dependent phase advance around the ring help localizing the most important impedance sources
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Zn-Site Determination in Protein Encapsulated ZnxFe3-xO4 Nanoparticles
The X-ray absorption spectra of the Fe and Zn L-edges for 6.7 nm Fe{sub 3}O{sub 4} nanoparticles grown inside 12 nm ferritin protein cages with 10%, 15%, 20% and 33% zinc doping, shows that the Zn is substitutional as Zn{sup 2+} within the iron oxide host structure. A Neel-Arrhenius plot of the blocking temperature in the frequency dependent ac-susceptibility measurements show that the particles are non-interacting and that the anisotropy energy barrier is reduced with Zn loading. X-ray magnetic circular dichroism (XMCD) of the Fe displays a linear decrease with Zn-doping in sharp contrast to the initial increase present in the bulk system. The most plausible explanation for the moment decrease is that Zn substitutes preferentially into the tetrahedral A-site as a Zn{sup 2+} cation, generating a mixed spinel
Zn-Site Determination in Protein Encapsulated Zn x Fe 3-x O 4 Nanoparticles
The X-ray absorption spectra of the Fe and Zn L-edges for 6.7 nm Fe 3 O 4 nanoparticles grown inside 12 nm ferritin protein cages with 10%, 15%, 20% and 33% zinc doping, shows that the Zn is substitutional as Zn 2+ within the iron oxide host structure. A Neel-Arrhenius plot of the blocking temperature in the frequency dependent ac-susceptibility measurements show that the particles are non-interacting and that the anisotropy energy barrier is reduced with Zn loading. X-ray magnetic circular dichroism (XMCD) of the Fe displays a linear decrease with Zn-doping in sharp contrast to the initial increase present in the bulk system. The most plausible explanation for the moment decrease is that Zn substitutes preferentially into the tetrahedral A-site as a Zn 2+ cation, generating a mixed spinel
Commissioning and Performance of the CMS Silicon Strip Tracker with Cosmic Ray Muons
Peer reviewe
Deflection and extraction of Pb ions up to 33 TeV/c by a bent silicon crystal
The first results from an experiment to deflect a beam of fully stripped, ulta-relativistic Pb ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c, by means of a bent crystal are reported. Deflection efficiencies are as high as 14%, in agreement with theoretical predictions. In a second experiment a bent crsytal was used to extract 270 GeV/c per charge Pb82+ (22 TeV/c) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10% was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams
Experimental evidence for multi-pass extraction with a bent crystal
The feasibility of extracting particles from the halo of a circulating proton beam using a bent silicon crystal has been demonstrated experimentally at the SPS for a beam energy of 120 GeV. Presently studies are conducted to understand the extraction mechanisms and the measured efficiencies. In particular the contribution of multi-pass extraction, where the particles can pass through the crystal many times before being channelled and extracted, is investigated. In a recent experiment, using a crystal especially fabricated with a finite amorphous layer on its surface, it has been proven that multi-pass extraction plays an important role. The experiment is described and the implication for further studies are discussed
Collision Mortality Has No Discernible Effect on Population Trends of North American Birds
Avian biodiversity is threatened by numerous anthropogenic factors and migratory species are especially at risk. Migrating birds frequently collide with manmade structures and such losses are believed to represent the majority of anthropogenic mortality for North American birds. However, estimates of total collision mortality range across several orders of magnitude and effects on population dynamics remain unknown. Herein, we develop a novel method to assess relative vulnerability to anthropogenic threats, which we demonstrate using 243,103 collision records from 188 species of eastern North American landbirds. After correcting mortality estimates for variation attributable to population size and geographic overlap with potential collision structures, we found that per capita vulnerability to collision with buildings and towers varied over more than four orders of magnitude among species. Species that migrate long distances or at night were much more likely to be killed by collisions than year-round residents or diurnal migrants. However, there was no correlation between relative collision mortality and long-term population trends for these same species. Thus, although millions of North American birds are killed annually by collisions with manmade structures, this source of mortality has no discernible effect on populations
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Development of a GaAs Monolithic Surface Acoustic Wave Integrated Circuit
An oscillator technology using surface acoustic wave delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback loop with a four-stage GaAs MESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHz have been designed and fabricated. These oscillators are also promising for other RF applications
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Development of GaAs-Based Monolithic Surface Acoustic Wave Devices for Chemical Sensing and RF Filter Applications
Since their invention in the mid-1960's, surface acoustic wave (SAW) devices have become popular for a wide variety of applications. SAW devices represent a low-cost and compact method of achieving a variety of electronic signal processing functions at high frequencies, such as RF filters for TV or mobile wireless communications [1]. SAW devices also provide a convenient platform in chemical sensing applications, achieving extremely high sensitivity to vapor phase analytes in part-per-billion concentrations [2]. Although the SAW acoustic mode can be created on virtually any crystalline substrate, the development of SAW technology has historically focused on the use of piezoelectric materials, such as various orientations of either quartz or lithium niobate, allowing the devices to be fabricated simply and inexpensively. However, the III-V compound semiconductors, and GaAs in particular, are also piezoelectric as a result of their partially covalent bonding and support the SAW acoustic mode, allowing for the convenient fabrication of SAW devices. In addition, GaAs microelectronics has, in the past decade, matured commercially in numerous RF wireless technologies. In fact, GaAs was recognized long ago as a potential candidate for the monolithic integration of SAW devices with microelectronics, to achieve compact RF signal processing functions [3]. The details of design and fabrication of SAW devices can be found in a variety of references [1]
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