New method of measuring relaxation times in semiconductors

A new method of measuring relaxation times of free carriers in semiconductors is proposed and demonstrated. It is based on the pulse duration dependence of free-carrier absorption through the sample. This method has been demonstrated with GaAs and InSb

PULSE DURATION-DEPENDENT FREE CARRIER-ABSORPTION IN SEMICONDUCTORS.

The free carrier absorption in InSb depends on the pulse duration of the picosecond CO//2 laser pulse. This is interpreted as the effect of incomplete carrier relaxation within the pulse duration. An electron energy relaxation time of 5. 6 ps is derived. The experiment presents a new method of measuring relaxation times in semiconductors and metals