584 research outputs found

    Domain variance and superstructure across the antiferroelectric/ferroelectric phase boundary in Pb1−1.5xLax(Zr0.9TiM0.1)O3

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    Transmission electron microscopy, x-ray diffraction, relative permittivity as a function of temperature, and polarization versus field loops were used to study the antiferroelectric/ferroelectric (AFE/FE) phase boundary in Pb1−1.5xLaxZr0.9Ti0.1O3 (PLZT, 100x/90/10) ceramics. X-ray diffraction and electrical measurements indicated a FE rhombohedral (R) to AFE tetragonal (T) phase transition between PLZT 2/90/10 and 4/90/10. Both phases exhibited superstructure reflections in electron-diffraction patterns at 1⁄2{hkl} positions consistent with rotations of the octahedra in antiphase. Previously, neutron diffraction suggested that the FER has an a−a−a− tilt system (Glazer notation), in agreement with its macroscopic symmetry. By analogy, it is proposed that the AFET phase has an a0a0c− tilt system. The AFE phase was also characterized by incommensurate superstructure along pseudocubic 〈110〉p directions, whereas the FE phase had extra commensurate superlattice reflections at 1⁄2{hk0}p positions. 1⁄2{hk0}p reflections are forbidden in both tilt systems, but their presence is explained by Pb ion displacements averaged along 〈111〉 but with short coherence antiparallel components along 〈110〉 directions. The antiparallel Pb displacements are coupled to an a−b−b− (a ≈ b) monoclinic tilt system in the vicinity of the AFE/FE boundary

    Electron diffraction of tilted perovskites

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    Simulations of electron diffraction patterns for each of the known perovskite tilt systems have been performed. The conditions for the appearance of superlattice reflections arising from rotations of the octahedra are modified to take into account the effects of different tilt systems for kinematical diffraction. The use of selected-area electron diffraction as a tool for perovskite structure determination is reviewed and examples are included

    Characterization of high-fracture toughness K-fluorrichterite-fluorapatite glass ceramics

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    Stoichiometric K-fluorrichterite (Glass A) and the same composition with 2 mol% P2O5 added (Glass B) were prepared and then heat-treated isothermally from 550°1000°C with 50°C intervals. Samples were characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The biaxial flexural strength and indentation fracture toughness of heat-treated glass specimens were also determined for both materials. XRD traces and TEM images showed similar phase evolution and fine microstructures for both systems at ≤950°C, with mica and diopside reacting with residual glass to form K-fluorrichterite as the temperature was increased from 650°C. However, in Glass B, fluorapatite was also present at >800°C. In contrast, coarser microstructures were observed at 1000°C, with larger K-fluorrichterite (20 μm) and enstatite (10 μm) crystals in Glasses A and B, respectively. The highest fracture toughness (2.69 ± 0.01 MPa·m(1/2)) and biaxial strength (242.6 ± 3.6 MPa) were recorded for Glass B heat-treated at 1000°C. This was attributed to the presence of enstatite coupled with an interlocked lath-like crystalline microstructure

    The atomic structure and chemistry of Fe-rich steps on antiphase boundaries in Ti-doped Bi<sub>0.9</sub>Nd<sub>0.15</sub>FeO3

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    Stepped antiphase boundaries are frequently observed in Ti-doped Bi&lt;sub&gt;0.85&lt;/sub&gt;Nd&lt;sub&gt;0.15&lt;/sub&gt;FeO&lt;sub&gt;3&lt;/sub&gt;, related to the novel planar antiphase boundaries reported recently. The atomic structure and chemistry of these steps are determined by a combination of high angle annular dark field and bright field scanning transmission electron microscopy imaging, together with electron energy loss spectroscopy. The core of these steps is found to consist of 4 edge-sharing FeO&lt;sub&gt;6&lt;/sub&gt; octahedra. The structure is confirmed by image simulations using a frozen phonon multislice approach. The steps are also found to be negatively charged and, like the planar boundaries studied previously, result in polarisation of the surrounding perovskite matrix

    Temperature Dependent Piezoelectric Properties of Lead-Free (1-x)K0.6Na0.4NbO3–xBiFeO3 Ceramics

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    (1-x)K0.4Na0.6NbO3–xBiFeO3 lead-free piezoelectric ceramics were successfully prepared in a single perovskite phase using the conventional solid-state synthesis. Relative permittivity (εr) as a function of temperature indicated that small additions of BiFeO3 not only broadened and lowered the cubic to tetragonal phase transition (TC) but also shifted the tetragonal to orthorhombic phase transition (TO–T) toward room temperature (RT). Ceramics with x = 1 mol.% showed optimum properties with small and large signal piezoelectric coefficient, d33 = 182 pC/N and d∗33 = 250 pm/V, respectively, electromechanical coupling coefficient, kp = 50%, and TC = 355°C. kp varied by ∼5% from RT to 90°C, while d∗33 showed a variation of ∼15% from RT to 75°C, indicating that piezoelectric properties were stable with temperature in the orthorhombic phase field. However, above the onset of TO–T, the properties monotonically degraded in the tetragonal phase field as TC was approached

    HRTEM study of a new non-stoichiometric BaTiO(3-δ) structure

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    BaTiO3-based multilayer ceramic capacitors (MLCCs) with Ni internal electrodes are co-fired in reducing atmospheres to avoid oxidation of the electrode. Although dielectric materials are doped by acceptor, donor and amphoteric dopants to minimize the oxygen vacancy content, there is still a large concentration of oxygen vacancies that are accommodated in the BaTiO3 active layers. In general, ABO3 perovskites demonstrates a strong ability to accommodate the oxygen vacancies and maintain a regular pseudo-cubic structure. Oxygen deficient barium titanate can be transformed to a hexagonal polymorph (h-BT) at high temperatures1,2. In this paper, we report the new modulated and long range ordered structures of non-stoichiometric BaTiO3-δ that are observed in the electrically degraded Ni-BaTiO3 MLCCs at low temperature

    PDB71 PILOT STUDY OF CLINICIAN ATTITUDES TO PUMP THERAPY: INTERNATIONAL DIFFERENCES AND THE NEED FORA GREATER UNDERSTANDING OF THE PATIENT PERSPECTIVE

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    Controlling mixed conductivity in Na 1/2 Bi 1/2 TiO 3 using A-site non-stoichiometry and Nb-donor doping

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    Precise control of electronic and/or ionic conductivity in electroceramics is crucial to achieve the desired functional properties as well as to improve manufacturing practices. We recently reported the conventional piezoelectric material Na1/2Bi1/2TiO3 (NBT) can be tuned into a novel oxide-ion conductor with an oxide-ion transport number (tion) > 0.9 by creating bismuth and oxygen vacancies. A small Bi-excess in the nominal starting composition (Na0.50Bi0.50+xTiO3+3x/2, x = 0.01) or Nb-donor doping (Na0.50Bi0.50Ti1−yNbyO3+y/2, 0.005 ≤ y ≤ 0.030) can reduce significantly the electrical conductivity to create dielectric behaviour by filling oxygen vacancies and suppressing oxide ion conduction (tion ≤ 0.10). Here we show a further increase in the starting Bi-excess content (0.02 ≤ x ≤ 0.10) reintroduces significant levels of oxide-ion conductivity and increases tion ∼ 0.4–0.6 to create mixed ionic/electronic behaviour. The switch from insulating to mixed conducting behaviour for x > 0.01 is linked to the presence of Bi-rich secondary phases and we discuss possible explanations for this effect. Mixed conducting behaviour with tion ∼ 0.5–0.6 can also be achieved with lower levels of Nb-doping (y ∼ 0.003) due to incomplete filling of oxygen vacancies without the presence of secondary phases. NBT can now be compositionally tailored to exhibit three types of electrical behaviour; Type I (oxide-ion conductor); Type II (mixed ionic-electronic conductor); Type III (insulator) and these results reveal an approach to fine-tune tion in NBT from near unity to zero. In addition to developing new oxide-ion and now mixed ionic/electronic NBT-based conductors, this flexibility in control of oxygen vacancies allows fine-tuning of both the dielectric/piezoelectric properties and design manufacturing practices for NBT-based multilayer piezoelectric devices
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