Информационная технология выбора профессиональных компетенций при формировании образовательной программы вуза

Объектом исследования данной работы является система выбора профессиональных компетенций при формировании содержания образовательной программы вуза. Цель работы – сократить временные затраты руководителя образовательной ООП, с помощью информационной системы, позволяющей делать быструю выборку профессиональных компетенций. В процессе исследования проводились обзор процесса формирования учебных планов, существующий решений и методов разработки и проектирования ООП. В результате исследования бал разработана информационная система, позволяющая автоматизировать процесс выбора профессиональных компетенций, при формировании содержания образовательной программы вуза.The object of research of this work is a system of choosing professional competencies in the formation of the content of the educational program of the university. The purpose of the work is to submit the time costs of the head of the educational program , using an information system that allows you to sample professional competencies. In the process of the study, the process of curriculum formation, existing solutions and methods of program development and design were verified. As a result of the study ball. Information system that allows to automate the process of selecting professional competencies, while forming the content of the educational program of the university

Electron capture cross sections of InAs/GaAs quantum dots

The thermal emission rates of electrons from InAs/GaAs quantum dots were measured, to found the capture cross sections in the extremely high region of 10-11-10-10 cm2. An additional method based on a static measurement at thermal equilibrium was used where the Fermi level was positioned at the free energy level of the quantum dot s shell. A Schottky diode with a plane of QDs grown in its depletion region and back-biased in such a way that the Fermi level coincides with the electron energy level. The Fermi level passes the lowest energy level of the QD, at the voltage marked by Vp in the graphs

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

Structural, optical, and electronic properties of self-organized InAs/GaAs quantum dots (QDs) were studied by means of atomic force microscopy (AFM), photoluminescence measurements (PL), and deep level transient spectroscopy (DLTS). We found that a well defined group of QDs with low size dispersion as revealed by AFM maintains its properties in PL spectra even if the QDs are covered by GaAs. Two well separated emission lines attributed to the QD-related ground- and excited-state transitions. respectively are found in the PL spectra. Contrary to the optical picture of a characteristic simplicity, DLTS spectra are found with higher complexity. This is due to combined thermal/tunneling processes and multi-particle emission. Despite the relatively good understanding of optical and electrical properties of QDs in PL and DLTS, respectively, there are still discrepancies between electrical and optical data for the energy of the QD ground states, which need more investigations to be explained