Silver Photo-Diffusion and Photo-Induced Macroscopic Surface Deformation of Ge33S67/Ag/Si Substrate

Ge-chalcogenide films show various photo-induced changes, and silver photo-diffusion is one of them which attracts lots of interest. In this paper, we report how silver and Ge-chalcogenide layers in Ge33S67/Ag/Si substrate stacks change under light exposure in the depth by measuring time-resolved neutron reflectivity. It was found from the measurement that Ag ions diffuse all over the matrix Ge33S67layer once Ag dissolves into the layer. We also found that the surface was macroscopically deformed by the extended light exposure. Its structural origin was investigated by a scanning electron microscopy

LONG-TERM PROGNOSIS IN CORONARY ARTERY DISEASE PATIENTS WITH HIGH PHYSICAL CAPACITY

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Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films

Silver Photodiffusion into Ge-Rich Amorphous Germanium Sulfide—Neutron Reflectivity Study

Silver diffuses into chalcogenide films upon light exposure, and the kinetics of photodiffusion has been a subject of various investigations because of the difficulties in the in situ determination of the time-dependent Ag reaction and diffusion development in the chalcogenide layers. In this paper, we report the results of time-resolved neutron reflectivity measurement of Ag/Ge40S60/Si substrates under light exposure to clarify the kinetics of Ag photodiffusion into Ge-rich Ge chalcogenides. It reveals that Ag ions diffuse all over the Ge chalcogenide host layer once Ag dissolves into the layer without forming a metastable reaction layer unlike the case of S-rich Ge chalcogenide such as Ge20S80. The decay curve suggests that the Ag dissolution is determined by two types of Ag capturing chalcogen sites. Also, the observed relaxation time showed anomalous chalcogenide layer thickness dependence. This is attributed to an additional diffusion-driven accelerating factor, which is unique to the silver photodiffusion. Furthermore, we observed indicative changes in the formation of an inhomogeneous in-plane structure at the Ag/chalcogenide interface. This would be related to the nucleation and growth of the Ag-dissolved reaction product

Low-Current Sensing Circuit and Topology for Portable Gamma Radiation Sensor

A sensing circuit is presented for a portable/handheld semiconductor based radiation sensor, which senses low current changes without the inclusion of transistor noise issues. This circuit design block was implemented using supporting circuit architectures to enable sensing between 33pA to 1nA using low voltages. Additionally, a unique circuit topology is presented by which the effect of radiation damage to the silicon substrate and any devices on the substrate is reduced

Structural Transformation in Ge\u3csub\u3e\u3cem\u3ex\u3c/em\u3e\u3c/sub\u3eS\u3csub\u3e100−x\u3c/sub\u3e (10 ≤\u3cem\u3e x \u3c/em\u3e≤ 40) Network Glasses: Structural Varieties in Short-Range, Medium-Range, and Nanoscopic Scale

Precise x-ray diffraction measurements using high-energy x rays of synchrotron radiation and systematic Raman scattering measurements were carried out for GexS100−x (10 ⩽ x ⩽ 40) network glasses. The structural models of the network glasses were proposed based on the results. In the stoichiometric composition Ge33S67, GeS4 tetrahedral units are connected forming either corner-sharing or edge-sharing structures. In the S-rich glasses, S atoms are inserted between two neighboring GeS4 tetrahedra, resulting in a flexible floppy network. In a much more S-rich region, some S8 ring molecules are isolated from the network, and assemble to form a crystal in nanoscopic scale. In this respect, Ge10S90 samples are regarded as crystallized glasses. In the Ge-rich region, the GeS4 tetrahedra are connected with bridging Ge atoms. The connection makes a new rigid network. The bridging Ge-S bond is weaker than the intratetrahedron bond, and this leads to drastic changes in the optical properties

ГЕНЕЗА И СВОЈСТВА НА РАНКЕРИТЕ РАСПРОСТРАНЕТИ ВО МЕСНОСТА КОНАР ПЕХЧЕВО

The study contains the results of the soil genesis condition, the genesis and properties of the ranker soil spread out of the Pehcevo in area Konar. This no carbonic soil,middle humus to weakly humus, mediumprovided to penurious of nitrogen, potassium, and weakly with phosphor, Sandy clay loam, sandy loam, loam to clay soils

ВЛИЈАНИЕ НА ФОЛИЈАРНОТО ЃУБРЕЊЕ СО ОРГАНСКИ ЃУБРИВА ВРЗ ПРИНОСОТ НА КОМПИР (Solanum tuberosum) ВО ГЕВГЕЛИСКИОТ РЕГИОН

The basic goal of this research is to determine the influence of foliar fertilization with organic fertilizers over the potato yield in the Gevgelija region. The experiment was set according to random block-system, on fluvisol soil with high concentration of available forms of nitrogen, phosphorus and potassium. It was performed during the vegetation period of 2013, on the territory of the village of Negorci, near Gevegelija, with four variants and three repetitions in twelve rows. Each variant involves 90 plants in total. The experiment involves the following variants: 1. Control (Non-fertilized); 2. Humustim; 3. Ingrasamant foliar, and 4. Bioflor. During the vegetation period, total of three treatments have been performed by foliar feeding with 0.5% solution of the above given fertilizers. Following the potato harvest and the measurements of the potato yield, it was concluded that the foliar fertilizing and the high concentration of available forms of nitrogen, phosphorus and potassium have positive effects over the quantity of the potato yield in all variants. The highest yield of 38.71 t/ha was achieved in the variant no. 3, Ingrasamant foliar

Influence of Cu Diffusion Conditions on the Switching of Cu-SiO\u3csub\u3e2\u3c/sub\u3e-Based Resistive Memory Devices

This paper presents a study of Cu diffusion at various temperatures in thin SiO2 films. Film composition and diffusion products were analyzed using Secondary Ion Mass Spectroscopy, Rutherford Backscattering Spectrometry, X-ray Diffraction and Raman Spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10-3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO2 network and remains in elemental form after diffusion. Programmable Metallization Cell (PMC) resistive memory cells were fabricated with these Cu-diffused SiO2 films as the active elements and device performance is presented and discussed in the context of the materials characteristics