4 research outputs found
Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing
Studies of annealing at temperatures up to 450C with LGADs irradiated
with neutrons are described. It was found that the performance of LGADs
irradiated with 1.5e15 n/cm was already improved at 5 minutes of annealing
at 250C. Isochronal annealing for 30 minutes in 50C steps
between 300C and 450C showed that the largest beneficial effect
of annealing is at around 350C. Another set of devices was annealed for
60 minutes at 350C and this annealing significantly increased
V. The effect is equivalent to reducing the effective acceptor
removal constant by a factor of 4. Increase of V is the
consequence of increased effective space charge in the gain layer caused by
formation of electrically active defects or re-activation of interstitial Boron
atoms