Thermal rectification effects of multiple semiconductor quantum dot junctions

Based on the multiple energy level Anderson model, this study theoretically examines the thermoelectric effects of semiconductor quantum dots (QDs) in the nonlinear response regime. The charge and heat currents in the sequential tunneling process are calculated by using the Keldysh Green's function technique. Results show that the thermal rectification effect can be observed in a multiple QD junction system, whereas the tunneling rate, size fluctuation, and location distribution of QD significantly influence the rectification efficiency.Comment: 5 pages, 8figure

Digital Switching in the Quantum Domain

In this paper, we present an architecture and implementation algorithm such that digital data can be switched in the quantum domain. First we define the connection digraph which can be used to describe the behavior of a switch at a given time, then we show how a connection digraph can be implemented using elementary quantum gates. The proposed mechanism supports unicasting as well as multicasting, and is strict-sense non-blocking. It can be applied to perform either circuit switching or packet switching. Compared with a traditional space or time domain switch, the proposed switching mechanism is more scalable. Assuming an n-by-n quantum switch, the space consumption grows linearly, i.e. O(n), while the time complexity is O(1) for unicasting, and O(log n) for multicasting. Based on these advantages, a high throughput switching device can be built simply by increasing the number of I/O ports.Comment: 24 pages, 16 figures, LaTe

Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors

The charge transport behaviors of parallel double single electron transistors (SETs) are investigated by the Anderson model with two impurity levels. The nonequilibrium Keldysh Green's technique is used to calculate the current-voltage characteristics of system. For SETs implemented by quantum dots (QDs) embedded into a thin $SiO_2$ layer, the interdot Coulomb repulsion is more important than the interdot electron hopping as a result of high potential barrier height between QDs and $SiO_2$. We found that the interdot Coulomb repulsion not onlyleads to new resonant levels, but also creates negative differential conductances.Comment: 12 pages, 7 figure