Technologies for trapped-ion quantum information systems

Scaling-up from prototype systems to dense arrays of ions on chip, or vast networks of ions connected by photonic channels, will require developing entirely new technologies that combine miniaturized ion trapping systems with devices to capture, transmit and detect light, while refining how ions are confined and controlled. Building a cohesive ion system from such diverse parts involves many challenges, including navigating materials incompatibilities and undesired coupling between elements. Here, we review our recent efforts to create scalable ion systems incorporating unconventional materials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and trapping techniques.Comment: 19 pages, 18 figure

Ion traps fabricated in a CMOS foundry

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.Comment: 4 pages, 3 figure