A micropillar for cavity optomechanics

We present a new micromechanical resonator designed for cavity optomechanics. We have used a micropillar geometry to obtain a high-frequency mechanical resonance with a low effective mass and a very high quality factor. We have coated a 60-$\mu$m diameter low-loss dielectric mirror on top of the pillar and are planning to use this micromirror as part of a high-finesse Fabry-Perot cavity, to laser cool the resonator down to its quantum ground state and to monitor its quantum position fluctuations by quantum-limited optical interferometry

Demonstration of air-guided quantum cascade lasers without top claddings

We report on quantum cascade lasers employing waveguides based on a predominant air confinement mechanism in which the active region is located immediately at the device top surface. The lasers employ ridge-waveguide resonators with narrow lateral electrical contacts only, with a large, central top region not covered by metallization layers. Devices based on this principle have been reported in the past; however, they employed a thick, doped top-cladding layer in order to allow for uniform current injection. We find that the in-plane conductivity of the active region - when the material used is of high quality - provides adequate electrical injection. As a consequence, the devices demonstrated in this work are thinner, and most importantly they can simultaneously support air-guided and surface-plasmon waveguide modes. When the lateral contacts are narrow, the optical mode is mostly located below the air-semiconductor interface. The mode is predominantly air-guided and it leaks from the top surface into the surrounding environment, suggesting that these lasers could be employed for surface-sensing applications. These laser modes are found to operate up to room temperature under pulsed injection, with an emission spectrum centered around λ ≃ 7:66 μm

GaSbBi alloys and heterostructures: fabrication and properties

International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures

Advances in quantum cascade lasers in the InAs/AlSb material system

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Recent progress in InAs-based quantum cascade lasers

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Long wavelength InAs/AlSb quantum cascade lasers

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InAs/AlSb quantum cascade active regionforemission in theTHzrange

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InAs-based quantum cascade lasers emitting close to 25 µm

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InAs/AlSb quantum cascade lasers operating near 20 µm

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