A micropillar for cavity optomechanics

We present a new micromechanical resonator designed for cavity optomechanics. We have used a micropillar geometry to obtain a high-frequency mechanical resonance with a low effective mass and a very high quality factor. We have coated a 60-$\mu$m diameter low-loss dielectric mirror on top of the pillar and are planning to use this micromirror as part of a high-finesse Fabry-Perot cavity, to laser cool the resonator down to its quantum ground state and to monitor its quantum position fluctuations by quantum-limited optical interferometry

Demonstration of air-guided quantum cascade lasers without top claddings

We report on quantum cascade lasers employing waveguides based on a predominant air confinement mechanism in which the active region is located immediately at the device top surface. The lasers employ ridge-waveguide resonators with narrow lateral electrical contacts only, with a large, central top region not covered by metallization layers. Devices based on this principle have been reported in the past; however, they employed a thick, doped top-cladding layer in order to allow for uniform current injection. We find that the in-plane conductivity of the active region - when the material used is of high quality - provides adequate electrical injection. As a consequence, the devices demonstrated in this work are thinner, and most importantly they can simultaneously support air-guided and surface-plasmon waveguide modes. When the lateral contacts are narrow, the optical mode is mostly located below the air-semiconductor interface. The mode is predominantly air-guided and it leaks from the top surface into the surrounding environment, suggesting that these lasers could be employed for surface-sensing applications. These laser modes are found to operate up to room temperature under pulsed injection, with an emission spectrum centered around λ ≃ 7:66 μm

GaSbBi alloys and heterostructures: fabrication and properties

International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures

Continuous Wave Operation of InAs/AlSb QCL

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Recent progress in InAs-based quantum cascade lasers

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Advances in quantum cascade lasers in the InAs/AlSb material system

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Long wavelength InAs/AlSb quantum cascade lasers

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High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide

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Continuous Wave Operation of InAs/AlSb QCL

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