Fundamentals of PV Efficiency Interpreted by a Two-Level Model

Elementary physics of photovoltaic energy conversion in a two-level atomic PV is considered. We explain the conditions for which the Carnot efficiency is reached and how it can be exceeded! The loss mechanisms - thermalization, angle entropy, and below-bandgap transmission - explain the gap between Carnot efficiency and the Shockley-Queisser limit. Wide varieties of techniques developed to reduce these losses (e.g., solar concentrators, solar-thermal, tandem cells, etc.) are reinterpreted by using a two level model. Remarkably, the simple model appears to capture the essence of PV operation and reproduce the key results and important insights that are known to the experts through complex derivations.Comment: 7 pages, 6 figure

SET based experiments for HTSC materials: II

The cuprates seem to exhibit statistics, dimensionality and phase transitions in novel ways. The nature of excitations [i.e. quasiparticle or collective], spin-charge separation, stripes [static and dynamics], inhomogeneities, psuedogap, effect of impurity dopings [e.g. Zn, Ni] and any other phenomenon in these materials must be consistently understood. In this note we further discuss our original suggestion of using Single Electron Tunneling Transistor [SET] based experiments to understand the role of charge dynamics in these systems. Assuming that SET operates as an efficient charge detection system we can expect to understand the underlying physics of charge transport and charge fluctuations in these materials for a range of doping. Experiments such as these can be classed in a general sense as mesoscopic and nano characterization of cuprates and related materials. In principle such experiments can show if electron is fractionalized in cuprates as indicated by ARPES data. In contrast to flux trapping experiments SET based experiments are more direct in providing evidence about spin-charge separation. In addition a detailed picture of nano charge dynamics in cuprates may be obtained.Comment: 10 pages revtex plus four figures; ICMAT 2001 Conference Symposium P: P10-0

Lattice thermal conductivity of disordered binary alloys : a formulation

We present here a formulation for the calculation of the configuration averaged lattice thermal conductivity in random alloys. Our formulation is based on the augmented-space theorem, introduced by one of us, combined with a generalized diagrammatic technique. The diagrammatic approach simplifies the problem of including effects of disorder corrections to a great extent. The approach allows us to obtain an expression for the effective heat current in case of disordered alloys, which in turn is used in a Kubo-Greenwood type formula for the thermal conductivity. We show that disorder scattering renormalizes the phonon propagators as well as the heat currents. The corrections to the current terms have been shown to be related to the self-energy of the propagators. We also study the effect of vertex corrections in a simplified ladder diagram approximation. A mode dependent diffusivity $D_{\gamma}$ and then a total thermal diffusivity averaged over different modes are defined. Schemes for implementing the said formalism are discussed. A few initial numerical results on the frequency and temperature dependence of lattice thermal conductivity are presented for NiPd alloy and are also compared with experiment. We also display numerical results on the frequency dependence of thermal diffusivity averaged over modes.Comment: 16 pages, 17 figure