Quantum steering of electron wave function in an InAs Y-branch switch

We report experiments on gated Y-branch switches made from InAs ballistic electron wave guides. We demonstrate that gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Such previously unexpected phenomenon provides evidence of steering the electron wave function in a multi-channel transistor structure.Comment: 15 pages, including 3 figure

Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing.Comment: 5 figure

Reentrant spin glass behavior in a layered manganite La1.2Sr1.8Mn2O7 single crystals

We report here a detailed study of AC/DC magnetization and longitudinal/transverse transport properties of La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystals below $T_{c}$ = 121 K. We find that the resistivity upturn below 40 K is related to the reentrant spin glass phase at the same temperature, accompanied by additional anomalous Hall effects. The carrier concentration from the ordinary Hall effects remains constant during the transition and is close to the nominal doping level (0.4 holes/Mn). The spin glass behavior comes from the competition between ferromagnetic double exchange and antiferromagnetic superexchange interactions, which leads to phase separation, i.e. a mixture of ferromagnetic and antiferromagnetic clusters, representing the canted antiferromagnetic state.Comment: 5 pages, 5 figures, submitted to Phys. Rev.

Quantum interference and electron-electron interactions at strong spin-orbit coupling in disordered systems

Transport and thermodynamic properties of disordered conductors are considerably modified when the angle through which the electron spin precesses due to spin-orbit interaction (SOI) during the mean free time becomes significant. Cooperon and Diffusion equations are solved for the entire range of strength of SOI. The implications of SOI for the electron-electron interaction and interference effects in various experimental settings are discussed.Comment: 4 pages, REVTEX, 1 eps.figure Submitted to Phys. Rev. Let