Raman spectra of GexAsySe1−x−y glasses

Various Ge–As–Se glasses spanning a mean coordination number (MCN) from 2.2 to 2.94 have been investigated using differential scanning calorimetry and Raman spectroscopy. The glass transition temperature Tg was found to increase with increasing MCN, except for those glasses located within the nanoscale phase-separated region of the phase diagram. The evolution of Raman features at wavenumbers from 150 to 350 cm⁻¹ exhibits two transitionlike features. Merging of the 225 and 250 cm⁻¹ modes at MCN=2.5 is a symbol of the extinction of Se–Se bonds. Additionally, the appearance of two modes at 280–290 and 170 cm⁻¹ at MCN>2.7 come from the defect modes of ethanelike Ge₂Se₆/₂. The increase in the scattering from these defects is an important factor leading to enhanced optical loss in the glasses with high MCN.This research was partly supported by the Australian Research Council through its Centres of Excellence and Federation Fellow Programs

Hydrogen contamination in Ge-doped SiO[sub 2] thin films prepared by helicon activated reactive evaporation

Germanium-doped silicon oxidethin films were deposited at low temperature by using an improved helicon plasma assisted reactive evaporation technique. The origins of hydrogen contamination in the film were investigated, and were found to be H incorporation during deposition and postdeposition water absorption. The H incorporation during deposition was avoided by using an effective method to eliminate the residual hydrogen present in the depositionsystem. The microstructure, chemical bonds, chemical etch rate, and optical index of the films were studied as a function of the deposition conditions. Granular microstructures were observed in low-density films, and were found to be the cause of postdeposition water absorption. The granular microstructure was eliminated and the film was densified by increasing the helicon plasma power and substrate bias during deposition. A high-density film was shown to have no postdeposition water absorption and no OH detected by using a Fourier-transform infrared spectrometer

Optical absorption measurements of silica containing Si nanocrystals produced by ion implantation and thermal annealing

Optical absorption spectra from silicon-implanted silica slides are shown to contain features due to optical interference. These features, which result from the modified refractive index profile produced by the implant, can readily lead to misinterpretation of absorption spectra. To demonstrate the importance of such effects, silica samples were implanted with 80, 400, and 600 keV Si ions to fluences in the range 0.6–3.0×10¹⁷ Si.cm⁻² and annealed at 1100 °C for 1 h to form Si nanocrystals. Optical absorption/transmittance spectra from these samples show considerable structure that is characteristic of the particular implant conditions. This structure is shown to correlate with the transmittance of the samples as calculated from the modified refractive index profile for each implant. The lack of such structure in absorption spectra measured by photodeflection spectrometry is used to confirm this interpretation

Ablation of solids by femtosecond lasers: ablation mechanism and ablation thresholds for metals and dielectrics

The mechanism of ablation of solids by intense femtosecond laser pulses is described in an explicit analytical form. It is shown that at high intensities when the ionization of the target material is complete before the end of the pulse, the ablation mechanism is the same for both metals and dielectrics. The physics of this new ablation regime involves ion acceleration in the electrostatic field caused by charge separation created by energetic electrons escaping from the target. The formulae for ablation thresholds and ablation rates for metals and dielectrics, combining the laser and target parameters, are derived and compared to experimental data. The calculated dependence of the ablation thresholds on the pulse duration is in agreement with the experimental data in a femtosecond range, and it is linked to the dependence for nanosecond pulses.Comment: 27 pages incl.3 figs; presented at CLEO-Europe'2000 11-15 Sept.2000; papers QMD6 and CTuK11

Self-reconstructing all-optical poling in polymer fibers

Self-sustained all-optical poling second-harmonic generation (SHG) experiments are conducted in single-core and multicore dye-doped poly(methyl methacrylate) optical fibers. By tuning the polarization of the fundamental beam, the SHG signal is degraded and is reconstructed spontaneously up to its initial level. We found a new situation in which the photo-induced self-organization of azo polymers creates a well-ordered periodic structure

Q-switched laser damage of infrared nonlinear materials

Q-switched laser-damage thresholds have been determined for six materials (proustite – Ag3AsS3, pyrargyrite – Ag3SbS3, cinnabar – HgS, silver thiogallate – AgGaS2, tellurium – Te, and gallium arsenide – GaAs) of interest for nonlinear optics in the medium infrared. Four TEM00 mode lasers were employed with outputs at wavelengths of 694 nm, 1.06, 2.098, and 10.6 µm. Damage has been found to be confined to the surface of the crystals and occurs for radiation intensities between 3 and 75 MW/cm2. Particular care is needed in the cutting and polishing of tellurium crystals if a high-damage threshold is to be achieved

All-optical directional coupler switching in chalcogenide glass

Copyright © 2005 IEEEYinlan Ruan, Barry Luther-Davies, Andrei Rode, Vesselin Kolev, Wieslaw Krolikowsk

Effect of low-Raman window position on correlated photon-pair generation in a chalcogenide Ge11.5As24Se64.5 nanowire

We investigated correlated photon-pair generation via spontaneous four-wave mixing in an integrated chalcogenideGe11.5As24Se64.5photonicnanowire. The coincidence to accidental ratio, a key measurement for the quality of correlated photon-pair sources, was measured to be only 0.4 when the photon pairs were generated at 1.9 THz detuning from the pump frequency due to high spontaneous Raman noise in this regime. However, the existence of a characteristic low-Raman window at around 5.1 THz in this material's Raman spectrum and dispersion engineering of the nanowire allowed us to generate photon pairs with a coincidence to accidental ratio of 4.5, more than 10 times higher than the 1.9 THz case. Through comparing the results with those achieved in chalcogenide As2S3waveguides which also exhibit a low Raman-window but at a larger detuning of 7.4 THz, we find that the position of the characteristic low-Raman window plays an important role on reducing spontaneous Raman noise because the phonon population is higher at smaller detuning. Therefore the ultimate solution for Raman noise reduction in Ge11.5As24Se64.5 is to generate photon pairs outside the Raman gain band at more than 10 THz detuning

Observation of two elastic thresholds in GeₓAsySe₁ˍₓ ˍy glasses

We have prepared GeₓAsySe1−x−yglasses with mean coordination numbers (MCNs) from 2.2 to 2.86. Tg was found to generally increase with increasing MCN while the glass density showed a maximum at MCN≈2.45 and a minimum at MCN≈2.65. The elastic moduli of the glasses were estimated from the shear and compressional wave velocitiesmeasured by ultrasonic pulse interferometry. For the first time we simultaneously observed two elastictransition thresholds, the first at MCN≈2.45 and the second at MCN≈2.65, which appear closely correlated with changes in the glass microstructure. The elastic moduli of two groups of samples with the same MCN=2.4 and 2.64 but different compositions suggest that the chemical compositions also have an influence on the elastic properties.This research is supported by the Australian Research Council through its Centres of Excellence and Federation Fellow Programs

Investigation of the structure of GexAsySe1−x−y glasses by x-ray photoelectron spectroscopy

We have measured and analyzed x-ray photoelectron spectra of a series of GexAsySe1−x−yglasses. The valence band spectra show that a number of Se-rich structures exist in the samples. After decomposing Ge, As, and Se3dspectra into several doublets and assigning them to the different local bond structures, it was found that, while GeSe₄/₂ tetrahedral, AsSe₃/₂ pyramidal, and Se trimers decrease in their integrated areas, most defect bonds increase with increasing mean coordination number. Moreover, while the appearance of Se trimers is reasonable in Se-rich samples, they never vanish, even in Se-poor samples. A possible mechanism to form Se trimers in Se-poor samples is discussed.This research was supported by Australian Research Council through its Centres of Excellence and Federation Fellow Programs