Noise properties of a resonance-type spin-torque microwave detector

We analyze performance of a resonance-type spin-torque microwave detector (STMD) in the presence of noise and reveal two distinct regimes of STMD operation. In the first (high-frequency) regime the minimum detectable microwave power $P_{\rm min}$ is limited by the low-frequency Johnson-Nyquist noise and the signal-to-noise ratio (SNR) of STMD is proportional to the input microwave power $P_{\rm RF}$. In the second (low-frequency) regime $P_{\rm min}$ is limited by the magnetic noise, and the SNR is proportional to $\sqrt{P_{\rm RF}}$. The developed formalism can be used for the optimization of the practical noise-handling parameters of a STMD.Comment: 3 pages, 2 figure

Noise spectroscopy of nanowire structures: fundamental limits and application aspects

Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique properties which may completely differ from their bulk counterparts. The main aim of this work is to give an overview of results on noise and fluctuation phenomena in NW-based structures. We emphasize that noise is one of the main parameters, which determines the characteristics of the device structures and sets the fundamental limits of the working principles and operation regimes of NWs as key electronic elements, including field-effect transistors (FETs). We review the studies focusing on the understanding of noise sources and the main application aspects of noise spectroscopy. Noise application aspects will provide information about the performance of core–shell NW structures, the gate-coupling effect and its advantages for detection of the useful signal with prospects to extract it from the noise level, random telegraph signal as a useful tool for enhanced sensitivity, novel components of noise reflecting dielectric polarization fluctuation processes and fluctuation phenomena as a sensitive tool for molecular charge dynamics in NW FETs. Moreover, noise spectroscopy assists understanding of electronic transport regimes and effects, transport peculiarities in topological materials and aspects reflecting Majorana bound states. Thus noise in NWs on the basis of Si, Ge, Si/Ge, GaAs, InAs, InGaAs, Au, GaAs/AlGaAs, GaAsSb, SnO2, GaN, ZnO, CuO, In2O3 and AlGaN/GaN materials reflects a great variety of phenomena and processes, information about their stability and reliability. It can be utilized for numerous different applications in nanoelectronics and bioelectronics