Electronic, Magnetic, and Structural Properties of CoMnVSb

Background Spin degree of freedom in electronic devices. Ideal candidate – room temperature half-metal. Heusler compounds attractive because of high Curie temperature Various mechanisms altering degree of spin polarization – mechanical strain, structural disorder, temperature, termination surface/interface, etc. CoMnVSb: nearly a spin gapless semiconductor

Magnetic Properties of FeCrVAl-Based Materials

Heusler alloys are a type of material composed of multiple transition metals and a p-metal, which generally exhibit desirable magnetic and electronic properties. We have investigated FeCrVAl-based materials