Quantized Landau level spectrum and its density dependence

Scanning tunneling microscopy and spectroscopy in magnetic field was used to study Landau quantization in graphene and its dependence on charge carrier density. Measurements were carried out on exfoliated graphene samples deposited on a chlorinated SiO2 thermal oxide which allowed observing the Landau level sequences characteristic of single layer graphene while tuning the density through the Si backgate. Upon changing the carrier density we find abrupt jumps in the Fermi level after each Landau level is filled. Moreover, the Landau level spacing shows a marked increase at low doping levels, consistent with an interaction-induced renormalization of the Dirac cone.Comment: 11 pages, 4 figure

Dynamical polarization, screening, and plasmons in gapped graphene

The one-loop polarization function of graphene has been calculated at zero temperature for arbitrary wavevector, frequency, chemical potential (doping), and band gap. The result is expressed in terms of elementary functions and is used to find the dispersion of the plasmon mode and the static screening within the random phase approximation. At long wavelengths the usual square root behaviour of plasmon spectra for two-dimensional (2D) systems is obtained. The presence of a small (compared to a chemical potential) gap leads to the appearance of a new undamped plasmon mode. At greater values of the gap this mode merges with the long-wavelength one, and vanishes when the Fermi level enters the gap. The screening of charged impurities at large distances differs from that in gapless graphene by slower decay of Friedel oscillations ($1/r^2$ instead of $1/r^3$), similarly to conventional 2D systems.Comment: 8 pages, 8 figures, v2: to match published versio

Scanning Tunneling Spectroscopy of Graphene on Graphite

We report low temperature high magnetic field scanning tunneling microscopy and spectroscopy of graphene flakes on graphite that exhibit the structural and electronic properties of graphene decoupled from the substrate. Pronounced peaks in the tunneling spectra develop with field revealing a Landau level sequence that provides a direct way to identify graphene and to determine the degree of its coupling to the substrate. The Fermi velocity and quasiparticle lifetime, obtained from the positions and width of the peaks, provide access to the electron-phonon and electron-electron interactions

Power-Aware Memory Allocation for Embedded Data-Intensive Signal Processing Applications

Many signal processing systems, particularly in the multimedia and telecommunication domains, are synthesized to execute data-intensive applications: their cost related aspects ­ namely power consumption and chip area ­ are heavily influenced, if not dominated, by the data access and storage aspects. This chapter presents a power-aware memory allocation methodology. Starting from the high-level behavioral specification of a given application, this framework performs the assignment of of the multidimensional signals to the memory layers ­ the on-chip scratch-pad memory and the off-chip main memory ­ the goal being the reduction of the dynamic energy consumption in the memory subsystem. Based on the assignment results, the framework subsequently performs the mapping of signals into the memory layers such that the overall amount of data storage be reduced. This software system yields a complete allocation solution: the exact storage amount on each memory layer, the mapping functions that determine the exact locations for any array element (scalar signal) in the specification, and, in addition, an estimation of the dynamic energy consumption in the memory subsystem

Local, global, and nonlinear screening in twisted double-layer graphene

One-atom-thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. To realize their potential it is necessary to isolate them from environmental disturbances, in particular those introduced by the substrate. However, finding and characterizing suitable substrates, and minimizing the random potential fluctuations they introduce, has been a persistent challenge in this emerging field. Here we show that Landau-level (LL) spectroscopy offers the unique capability to quantify both the reduction of the quasiparticles\u27 lifetime and the long-range inhomogeneity due to random potential fluctuations. Harnessing this technique together with direct scanning tunneling microscopy and numerical simulations we demonstrate that the insertion of a graphene buffer layer with a large twist angle is a very effective method to shield a 2D system from substrate interference that has the additional desirable property of preserving the electronic structure of the system under study. We further show that owing to its remarkable nonlinear screening capability a single graphene buffer layer provides better shielding than either increasing the distance to the substrate or doubling the carrier density and reduces the amplitude of the potential fluctuations in graphene to values even lower than the ones in AB-stacked bilayer graphene

Integer and Fractional Quantum Hall Effect in Two-Terminal Measurements on Suspended Graphene

We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic samples. New quantized states are found at integer Landau level fillings outside the sequence 2,6,10.., as well as at a fractional filling \nu=1/3. Their presence is revealed by plateaus in the two-terminal conductance which appear in magnetic fields as low as 2 Tesla at low temperatures and persist up to 20 Kelvin in 12 Tesla. The excitation gaps, extracted from the data with the help of a theoretical model, are found to be significantly larger than in GaAs based electron systems.Comment: 17 pages, 4 figure