Appeal No. 0714: Gary Harris & Group Maintenance v. Division of Mineral Resources Management

Chief\u27s Order 2003-1

Phase error in current transformers with nanocrystalline alloys core

Peer Reviewe

SIC Power Devices in Power Electronics: An Overview

International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the last years, and they haveproven to be efficient in a wide range of applications. Buthigh power, high frequency and high temperatureapplications require more than Si can deliver. With theadvance of technology, Silicon Carbide (SiC) and GalliumNitride (GaN) power devices have evolved from immatureprototypes in laboratories to a viable alternative to Si-basedpower devices in high-efficiency and high-power densityapplications. SiC and GaN devices have several compellingadvantages: high-breakdown voltage, high-operatingelectric field, high-operating temperature, high-switchingfrequency and low losses. This paper provides a generalreview on the properties of these materials comparing someperformance between Si and SiC devices for typical powerelectronics applications. Based on studied information, lineof progress and the current state of developing, SiC seemsto be the most viable substitute in high power and hightemperature applications in the mid-term of Si, due to thefact that the GaN is still used in a reduced number ofapplications

SIC Power Devices in Power Electronics: An Overview

International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the last years, and they haveproven to be efficient in a wide range of applications. Buthigh power, high frequency and high temperatureapplications require more than Si can deliver. With theadvance of technology, Silicon Carbide (SiC) and GalliumNitride (GaN) power devices have evolved from immatureprototypes in laboratories to a viable alternative to Si-basedpower devices in high-efficiency and high-power densityapplications. SiC and GaN devices have several compellingadvantages: high-breakdown voltage, high-operatingelectric field, high-operating temperature, high-switchingfrequency and low losses. This paper provides a generalreview on the properties of these materials comparing someperformance between Si and SiC devices for typical powerelectronics applications. Based on studied information, lineof progress and the current state of developing, SiC seemsto be the most viable substitute in high power and hightemperature applications in the mid-term of Si, due to thefact that the GaN is still used in a reduced number ofapplications

Water level influences on body condition of Geophagus brasiliensis (Perciformes: Cichlidae) in a Brazilian oligotrophic reservoir

Effects of water level fluctuations on body condition of Geophagus brasiliensis were studied in a 30 km² Brazilian oligotrophic reservoir. Physiological condition (K) and gonadosomatic index (GSI) were compared according to water level (low and high). Females' best conditions were associated to higher resources availability during high water, since gonad development did not change between low and high water. Males' condition did not change between water levels, while the highest gonad development occurred in low water. Females presented higher reproductive investment than males, which allocated most of energy for somatic development. This strategy could be a mechanism to undergo the stress caused by oligotrophic characteristics of the reservoir enhanced during low water level