Understanding the saturation power of Josephson Parametric Amplifiers made from SQUIDs arrays

We report on the implementation and detailed modelling of a Josephson Parametric Amplifier (JPA) made from an array of eighty Superconducting QUantum Interference Devices (SQUIDs), forming a non-linear quarter-wave resonator. This device was fabricated using a very simple single step fabrication process. It shows a large bandwidth (45 MHz), an operating frequency tunable between 5.9 GHz and 6.8 GHz and a large input saturation power (-117 dBm) when biased to obtain 20 dB of gain. Despite the length of the SQUID array being comparable to the wavelength, we present a model based on an effective non-linear LC series resonator that quantitatively describes these figures of merit without fitting parameters. Our work illustrates the advantage of using array-based JPA since a single-SQUID device showing the same bandwidth and resonant frequency would display a saturation power 15 dB lower.Comment: 12 pages, 9 figures, Appendices include

A photonic crystal Josephson traveling wave parametric amplifier

An amplifier combining noise performances as close as possible to the quantum limit with large bandwidth and high saturation power is highly desirable for many solid state quantum technologies such as high fidelity qubit readout or high sensitivity electron spin resonance for example. Here we introduce a new Traveling Wave Parametric Amplifier based on Superconducting QUantum Interference Devices. It displays a 3 GHz bandwidth, a -102 dBm 1-dB compression point and added noise near the quantum limit. Compared to previous state-of-the-art, it is an order of magnitude more compact, its characteristic impedance is in-situ tunable and its fabrication process requires only two lithography steps. The key is the engineering of a gap in the dispersion relation of the transmission line. This is obtained using a periodic modulation of the SQUID size, similarly to what is done with photonic crystals. Moreover, we provide a new theoretical treatment to describe the non-trivial interplay between non-linearity and such periodicity. Our approach provides a path to co-integration with other quantum devices such as qubits given the low footprint and easy fabrication of our amplifier.Comment: 6 pages, 4 figures, Appendixe

Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 {\mu}m in these samples even at the charge neutrality point

Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition (CVD) is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11,000 cm2/(V·s) is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of >1 µm, even at the charge neutrality point of the samples

Observation of two-mode squeezing in a traveling wave parametric amplifier

Traveling wave parametric amplifiers (TWPAs) have recently emerged as essential tools for broadband near quantum-limited amplification. However, their use to generate microwave quantum states still misses an experimental demonstration. In this letter, we report operation of a TWPA as a source of two-mode squeezed microwave radiation. We demonstrate broadband entanglement generation between two modes separated by up to 400 MHz by measuring logarithmic negativity between 0.27 and 0.51 and collective quadrature squeezing below the vacuum limit between 1.5 and 2.1 dB. This work opens interesting perspectives for the exploration of novel microwave photonics experiments with possible applications in quantum sensing and continuous variable quantum computing

A tunable Josephson platform to explore many-body quantum optics in circuit-QED

Coupling an isolated emitter to a single mode of the electromagnetic field is now routinely achieved and well understood. Current efforts aim to explore the coherent dynamics of emitters coupled to several electromagnetic modes (EM). freedom. Recently, ultrastrong coupling to a transmission line has been achieved where the emitter resonance broadens to a significant fraction of its frequency. In this work we gain significantly improved control over this regime. We do so by combining the simplicity of a transmon qubit and a bespoke EM environment with a high density of discrete modes, hosted inside a superconducting metamaterial. This produces a unique device in which the hybridisation between the qubit and up to 10 environmental modes can be monitored directly. Moreover the frequency and broadening of the qubit resonance can be tuned independently of each other in situ. We experimentally demonstrate that our device combines this tunability with ultrastrong coupling and a qubit nonlinearity comparable to the other relevant energy scales in the system. We also develop a quantitative theoretical description that does not contain any phenomenological parameters and that accurately takes into account vacuum fluctuations of our large scale quantum circuit in the regime of ultrastrong coupling and intermediate non-linearity. The demonstration of this new platform combined with a quantitative modelling brings closer the prospect of experimentally studying many-body effects in quantum optics. A limitation of the current device is the intermediate nonlinearity of the qubit. Pushing it further will induce fully developed many-body effects, such as a giant Lamb shift or nonclassical states of multimode optical fields. Observing such effects would establish interesting links between quantum optics and the physics of quantum impurities.Comment: Main paper and Supplementary Information combined in one file. List of the modifications in the final version: new abstract and introduction, comparison to RWA treatment, more precise capacitance mode

Fabrication and characterization of aluminum SQUID transmission lines

We report on the fabrication and characterization of 50 Ohms, flux-tunable, low-loss, SQUID-based transmission lines. The fabrication process relies on the deposition of a thin dielectric layer (few tens of nanometers) via Atomic Layer Deposition (ALD) on top of a SQUID array, the whole structure is then covered by a non-superconducting metallic top ground plane. We present experimental results from five different samples. We systematically characterize their microscopic parameters by measuring the propagating phase in these structures. We also investigate losses and discriminate conductor from dielectric losses. This fabrication method offers several advantages. First, the SQUID array fabrication does not rely on a Niobium tri-layer process but on a simpler double angle evaporation technique. Second, ALD provides high quality dielectric leading to low-loss devices. Further, the SQUID array fabrication is based on a standard, all-aluminum process, allowing direct integration with superconducting qubits. Moreover, our devices are in-situ flux tunable, allowing mitigation of incertitude inherent to any fabrication process. Finally, the unit cell being a single SQUID (no extra ground capacitance is needed), it is straightforward to modulate the size of the unit cell periodically, allowing band-engineering. This fabrication process can be directly applied to traveling wave parametric amplifiers.Comment: 9 pages, 9 figures, Appendixe

State preparation of a fluxonium qubit with feedback from a custom FPGA-based platform

We developed a versatile integrated control and readout instrument for experiments with superconducting quantum bits (qubits), based on a field-programmable gate array (FPGA) platform. Using this platform, we perform measurement-based, closed-loop feedback operations with $428 \, \mathrm{ns}$ platform latency. The feedback capability is instrumental in realizing active reset initialization of the qubit into the ground state in a time much shorter than its energy relaxation time $T_1$. We show experimental results demonstrating reset of a fluxonium qubit with $99.4\,\%$ fidelity, using a readout-and-drive pulse sequence approximately $1.5 \, \mathrm{\mu s}$ long. Compared to passive ground state initialization through thermalization, with the time constant given by $T_1 = ~ 80 \, \mathrm{\mu s}$, the use of the FPGA-based platform allows us to improve both the fidelity and the time of the qubit initialization by an order of magnitude.Comment: 3 pages, 2 figures. The following article has been submitted to the AIP Conference Proceedings of the Fifth International Conference on Quantum Technologies (ICQT-2019

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires the already existing transistor gates to readout a quantum dot state, relieving the need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance the readout signal-to-noise ratio (SNR) by reducing the noise below typical cryogenic low-noise amplifiers, while offering a broad amplification band, essential to multiplex the readout of multiple resonators. In this work, we demonstrate a 3GHz gate-based reflectometry readout of electron charge states trapped in quantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to a Josephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHz amplification bandwidth combined with more than 10dB ON/OFF SNR improvement of the JTWPA enables frequency and time division multiplexed readout of interdot transitions, and noise performance near the quantum limit. In addition, owing to a design without superconducting loops and with a metallic ground plane, the JTWPA is flux insensitive and shows stable performances up to a magnetic field of 1.2T at the quantum dot device, compatible with standard SiMOS spin qubit experiments

Non-degenerate parametric amplifiers based on dispersion engineered Josephson junction arrays

Determining the state of a qubit on a timescale much shorter than its relaxation time is an essential requirement for quantum information processing. With the aid of a new type of non-degenerate parametric amplifier, we demonstrate the continuous detection of quantum jumps of a transmon qubit with 90% fidelity in state discrimination. Entirely fabricated with standard two-step optical lithography techniques, this type of parametric amplifier consists of a dispersion engineered Josephson junction (JJ) array. By using long arrays, containing $10^3$ JJs, we can obtain amplification at multiple eigenmodes with frequencies below $10~\mathrm{GHz}$, which is the typical range for qubit readout. Moreover, by introducing a moderate flux tunability of each mode, employing superconducting quantum interference device (SQUID) junctions, a single amplifier device could potentially cover the entire frequency band between 1 and $10~\mathrm{GHz}$.Comment: P.W. and I.T. contributed equally. 9 pages, 5 figures and appendice