1 research outputs found
Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots
Tuning
light emission in bulk and quantum structures by strain
constitutes a complementary method to engineer functional properties
of semiconductors. Here, we demonstrate the tuning of light emission
of GaAs nanowires and their quantum dots up to 115 meV by applying
strain through an oxide envelope. We prove that the strain is highly
anisotropic and clearly results in a component along the NW longitudinal
axis, showing good agreement with the equations of uniaxial stress.
We further demonstrate that the strain strongly depends on the oxide
thickness, the oxide intrinsic strain, and the oxide microstructure.
We also show that ensemble measurements are fully consistent with
characterizations at the single-NW level, further elucidating the
general character of the findings. This work provides the basic elements
for strain-induced band gap engineering and opens new avenues in applications
where a band-edge shift is necessary