Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

The threshold voltage of a field-effect transistor (FED determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, modulating the channel conductivity. The control gate sets the work function of the graphene gate, controlling the Schottky barrier height and therefore the threshold voltage, and reduces the subthreshold swing down to similar to 60 mV dec(-1). The change of the threshold voltage was large enough to turn the initially depletion mode FETs into the enhancement mode FETs. This allowed to realize logic gates with a positive switching threshold in which the threshold voltage of each transistor was independently set. The presented FETs can also be operated as dual-gate FETs, which was demonstrated by realizing frequency mixers

Ultra-low contact resistance in graphene devices at the Dirac point

Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 Omega . mu m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 Omega . mu m was obtained under such conditions). The 'holey' Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m(-1) at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts

Chiral transport of hot carriers in graphene in the quantum Hall regime

Photocurrent (PC) measurements can reveal the relaxation dynamics of photo-excited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. In graphene subject to a magnetic field, PC measurements are able to probe the existence of Landau levels with different edge chiralities which is exclusive to relativistic electron systems. Here, we report the accurate measurement of PC in graphene in the quantum Hall regime. Prominent PC oscillations as a function of gate voltage on samples' edges are observed. These oscillation amplitudes form an envelope which depends on the strength of the magnetic field, as does the PCs' power dependence and their saturation behavior. We explain these experimental observations through a model using optical Bloch equations, incorporating relaxations through acoustic-, optical- phonons and Coulomb interactions. The simulated PC agrees with our experimental results, leading to a unified understanding of the chiral PC in graphene at various magnetic field strengths, and providing hints for the occurrence of a sizable carrier multiplication.Comment: 14 pages, 13 figure

Graphene-Si CMOS oscillators

Graphene field-effect transistors (GFETs) offer a possibility of exploiting unique physical properties of graphene in realizing novel electronic circuits. However, graphene circuits often lack the voltage swing and switchability of Si complementary metal-oxide-semiconductor (CMOS) circuits, which are the main building block of modern electronics. Here we introduce graphene in Si CMOS circuits to exploit favorable electronic properties of both technologies and realize a new class of simple oscillators using only a GFET, Si CMOS D latch, and timing RC circuit. The operation of the two types of realized oscillators is based on the ambipolarity of graphene, i.e., the symmetry of the transfer curve of GFETs around the Dirac point. The ambipolarity of graphene also allowed to turn the oscillators into pulse-width modulators (with a duty cycle ratio ∼1 : 4) and voltage-controlled oscillators (with a frequency ratio ∼1 : 8) without any circuit modifications. The oscillation frequency was in the range from 4 kHz to 4 MHz and limited only by the external circuit connections, rather than components themselves. The demonstrated graphene-Si CMOS hybrid circuits pave the way to the more widespread adoption of graphene in electronics

Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics

Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of {\tau} ~ 3.3 {\mu}s for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs

Performance Analysis of Flexible Ink-Jet Printed Humidity Sensors Based on Graphene Oxide

This paper presents design, fabrication, and characterization of flexible capacitive graphene oxide (GO) based humidity sensors, which can be used in many applications, such as environmental protection, civil engineering, and agriculture. They consist of interdigitated electrodes ink-jet printed on a polyimide flexible substrate and GO based sensing layer. Measurement setup for testing and characterization was developed in laboratory conditions. The dependence of the capacitance and resistance of the GO based humidity sensors on the percentage of the applied humidity is presented. The main advantage of developed GO based capacitive humidity sensors is very large variation of capacitance, almost five orders of magnitude, compared with the previously demonstrated sensors. The other advantages of the sensors are fast response-recovery time, excellent reproducibility of the measurement results, and use of cost-effective additive ink-jet technology

Photodetectors Based on 3D Self-Assembled Ge and Si Micro-Crystals

No abstract availabl

First measurement of the top quark pair production cross section in proton-proton collisions at s\sqrt{s} = 13.6 TeV

The first measurement of the top quark pair ($\mathrm{t\bar{t}}$) production cross section in proton-proton collisions at $\sqrt{s}$ = 13.6 TeV is presented. Data recorded with the CMS detector at the CERN LHC in Summer 2022, corresponding to an integrated luminosity of 1.21 fb$^{-1}$, are analyzed. Events are selected with one or two charged leptons (electrons or muons) and additional jets. A maximum likelihood fit is performed in event categories defined by the number and flavors of the leptons, the number of jets, and the number of jets identified as originating from b quarks. An inclusive $\mathrm{t\bar{t}}$ production cross section of 882 $\pm$ 23 (stat+syst) $\pm$ 20 (lumi) pb is measured, in agreement with the standard model prediction of 921$^{+29}_{-37}$ pb