Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs

Measured minority and majority carrier mobility temperature dependencies in heavily doped n- and p-GaAs are compared. Majority carrier mobilities in heavily doped GaAs are essentially temperature ~T! independent while minority carrier mobilities exhibit a roughly 1/T dependence. Majority carrier freezeout, which reduces both majority–minority carrier and ionized impurity scattering, is shown not to be responsible for the 1/T minority carrier mobility dependence. The difference in minority and majority carrier mobility T dependencies is explained in terms of the increased degree of degeneracy of majority carriers with decreased temperature, which decreases majority–minority carrier scattering

Experimental determination of the effects of degenerate Fermi statistics on heavily p‐doped GaAs

The effects of degenerate Fermi statistics on electron injection currents for p+‐GaAs grown by molecular beam epitaxy are presented. To achieve Be dopant concentrations of greater than 8×1019 cm−3, the substrate temperature during growth was reduced to approximately 450 °C from the usual 600 °C. In this heavily doped material, we measure unexpectedly large electron injectioncurrents which are interpreted in terms of an effective narrowing of the band gap. At extremely heavy doping densities, the Fermi level pushes into the valence band and degenerate Fermi statistics must be taken into account. For doping concentrations greater than 1×1020 cm−3, effects due to degenerate Fermi statistics oppose the band‐gap shrinkage effects; consequently, a reduction in the electron injection currents is observed. The result is a substantial reduction in gain for AlGaAs/GaAs heterostructure bipolar transistors when the base is doped above 1020 cm−3

Minority Hole Mobility in n+ GaAs

The minority hole diffusivity, or equivalently the hole mobility, was measured in n+GaAs with the zero‐field time‐of‐flight technique. The minority hole mobility was measured for the donor doping range of 1.3×1017 cm−3 to 1.8×1018 cm−3 and was found to vary from 235 to 295 cm2/V s. At the lower doping level, the minority hole mobility is comparable to the corresponding majority hole mobility, but at 1.8×1018 cm−3 the minority hole mobility was 30% higher than the majority carrier hole mobility. These results have important implications for the design of devices such as solar cells and pnp‐heterojunction bipolar transistors

Non-existence of Ramanujan congruences in modular forms of level four

Ramanujan famously found congruences for the partition function like p(5n+4) = 0 modulo 5. We provide a method to find all simple congruences of this type in the coefficients of the inverse of a modular form on Gamma_{1}(4) which is non-vanishing on the upper half plane. This is applied to answer open questions about the (non)-existence of congruences in the generating functions for overpartitions, crank differences, and 2-colored F-partitions.Comment: 19 page

Minority-carrier mobility enhancement in p+ InGaAs lattice matched to InP

Minority electron mobilities in pf-In0.ssGac4, As have been measured with the zero field time-of-flight technique. The room-temperature (297 K) minority electron mobilities for p+-In,, 53Gac47A~ doped 0.9 and 3.1 x 10” cmm3 are found to be 2900 and 3300 cm* V-’ s-l, respectively. These are the first measurements to demonstrate enhancement in minority-carrier mobility as doping is increased for heavily doped Ines3Gae.4+s. This enhancement in mobility as doping is increased is similar to that observed in p+-GaAs, which has been attributed to reductions in plasmon and carrier-carrier scattering between minority electrons and majority holes

Experimental Observation of a Minority Electron Mobility Enhancement in degenerately doped p-Type GaAs

The variation of minority electron mobility with doping density in p+-GaAs has been measured with the zero-field time-of-flight technique. The results from a series of nine GaAs films doped between 1 X lOI and 8 X 10” cmm3 show the mobility decreasing from 1950 cm2 V-’ s-l at 1 X 10” cmm3 to 1370 cm2 V-l s-l at 9X 10” cmB3. For the doping range 9 x 1018-8x 1019 cme3, the decreasing trend in mobility is reversed. The measured mobility of 3710 cm2 V-’ s-l at 8 X 10” cmp3 is about three times higher than the measured value at 9 X 1018 cmm3. These results confirm and extend recent transistor-based measurements and are in accord with recent theoretical predictions that attribute the increase in minority electron mobility in p+-GaAs to reductions in plasmon and carrier-carrier scattering at high hole densities

Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs

Minority electron diffusivities in p+-GaAs-doped NA =~1.4×1018 and ~1019 cm-3 have been measured in zero-field conditions with an extension of the zero-field time-of-flight technique. Extension of the technique to make it applicable to heavily doped p+-GaAs is described and zero-field data are discussed. Unexpectedly, majority carrier drag effects are not evident in a comparison of this data with recently reported high-field data. Low zero-field mobility of electrons in p+-GaAs has important implications for high-speed devices such as heterojunction bipolar transistors

Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon

Minority electron properties in p+‐GaAs doped with beryllium (Be) and with carbon (C) are reported. Measurements of essentially identical responses for structures differing only in dopant element demonstrate that the diffusivity (Dn) and the diffusion lengths (Ln) are the same in p+‐GaAs doped to ∼1019 cm−3 with Be‐ and C‐dopants. Zero‐field time‐of‐flight analysis yields Dn=35 cm2/s and internal quantum efficiency analysis yields Ln=2.4 μm, which implies a lifetime that is approximately at the estimated radiative limit. In addition, the majority Hall mobility was also found to be identical for the Be‐ and C‐doped material

The Otterbein Miscellany - June 1974

https://digitalcommons.otterbein.edu/miscellany/1002/thumbnail.jp

Bodyweight Perceptions among Texas Women: The Effects of Religion, Race/Ethnicity, and Citizenship Status

Despite previous work exploring linkages between religious participation and health, little research has looked at the role of religion in affecting bodyweight perceptions. Using the theoretical model developed by Levin et al. (Sociol Q 36(1):157–173, 1995) on the multidimensionality of religious participation, we develop several hypotheses and test them by using data from the 2004 Survey of Texas Adults. We estimate multinomial logistic regression models to determine the relative risk of women perceiving themselves as overweight. Results indicate that religious attendance lowers risk of women perceiving themselves as very overweight. Citizenship status was an important factor for Latinas, with noncitizens being less likely to see themselves as overweight. We also test interaction effects between religion and race. Religious attendance and prayer have a moderating effect among Latina non-citizens so that among these women, attendance and prayer intensify perceptions of feeling less overweight when compared to their white counterparts. Among African American women, the effect of increased church attendance leads to perceptions of being overweight. Prayer is also a correlate of overweight perceptions but only among African American women. We close with a discussion that highlights key implications from our findings, note study limitations, and several promising avenues for future research