Fatigue response of MoS2 with controlled introduction of atomic vacancies

Fatigue-induced failure resulting from repetitive stress-strain cycles is a critical concern in the development of robust and durable nanoelectromechanical devices founded on 2D semiconductors. Defects, such as vacancies and grain boundaries, inherent in scalable materials can act as stress concentrators and accelerate fatigue fracture. Here, we investigate MoS2 with controlled atomic vacancies, to elucidate its mechanical reliability and fatigue response as a function of atomic defect density. High-quality MoS2 demonstrates an exceptional fatigue response, enduring 109 cycles at 80% of its breaking strength (13.5 GPa), surpassing the fatigue resistance of steel and approaching that of graphene. The introduction of atomic defect densities akin to those generated during scalable synthesis processes (∼1012 cm-2) reduces the fatigue strength to half the breaking strength. Our findings also point toward a sudden defect reconfiguration prior to global failure as the primary fatigue mechanism, offering valuable insights into structure-property relationshipsS2018/NMT-432

Improved graphene blisters by ultrahigh pressure sealing

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To acces final work see “Improved Graphene Blisters by Ultrahigh Pressure Sealing”, ACS Applied Materials and Interfaces 12.33 (2020): 37750-37756, 10.1021/acsami.0c09765Graphene is a very attractive material for nanomechanical devices and membrane applications. Graphene blisters based on silicon oxide microcavities are a simple but relevant example of nanoactuators. A drawback of this experimental setup is that gas leakage through the graphene-SiO2 interface contributes significantly to the total leak rate. Here, we study the diffusion of air from pressurized graphene drumheads on SiO2 microcavities and propose a straightforward method to improve the already strong adhesion between graphene and the underlying SiO2 substrate, resulting in reduced leak rates. This is carried out by applying controlled and localized ultrahigh pressure (>10 GPa) with an atomic force microscopy diamond tip. With this procedure, we are able to significantly approach the graphene layer to the SiO2 surface around the drumheads, thus enhancing the interaction between them, allowing us to better seal the graphene-SiO2 interface, which is reflected in up to ∼4 times lower leakage rates. Our work opens an easy way to improve the performance of graphene as a gas membrane on a technological relevant substrate such as SiO2We acknowledge financial support from the Spanish Ministry of Science and Innovation, through the “Marı́ ́ a de Maeztu” Programme for Units of Excellence in R&D (CEX2018- 000805-M), projects PID2019-106268GB, S2018/NMT-451, and FLAG-ERA JTC2017, and the Ramon Areces Foundation. G.L.-P. acknowledges financial support through the “Juan de la Cierva” Fellowship FJCI-2017-3237

Integrating 2D materials and plasmonics on lithium niobate platforms for pulsed laser operation at the nanoscale

The current need for coherent light sources for integrated (nano)photonics motivates the search for novel laser designs emitting at technologically relevant wavelengths with high-frequency stability and low power consumption. Here, a new monolithic architecture that integrates monolayer MoS2 and chains of silver nanoparticles on a rare-earth (Nd3+) doped LiNbO3 platform is developed to demonstrate Q-switched lasing operation at the nanoscale. The localized surface plasmons provided by the nanoparticle chains spatially confine the gain generated by Nd3+ ions at subwavelength scales, and large-area monolayer MoS2 acts as saturable absorber. As a result, an ultra-compact coherent pulsed light source delivering stable train pulses with repetition rates of hundreds of kHz and pulse duration of 1 µs is demonstrated without the need of any voltage-driven optical modulation. Moreover, the monolithic integration of the different elements is achieved without sophisticated processing, and it is compatible with LiNbO3-based photonics. The results highlight the robustness of the approach, which can be extended to other 2D materials and solid-state gain media. Potential applications in communications, quantum computing, or ultra-sensitive sensing can benefit from the synergy of the materials involved in this approach, which provides a wealth of opportunities for light control at reduced scalesPID2019-108257GB-I00, PID2022-137444NB-I0, CEX2018-000805-M, PID2019-106268GB-C3