6,035 research outputs found

    High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

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    The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-/spl mu/m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm/sup 2/ are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm/sup 2/ for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets

    Liquid crystal device

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    The invention relates to a device comprising at least one substrate, an electrode structure and a liquid crystalline polymer film obtainable from a polymerisable LC medium comprising one or more multi-or direactive or monoreactive mesogenic compounds, characterized in that the surface shape of said polymer film can be electrically switched. Furthermore, the invention relates to a process of production of said device, to the use of said device in an electro-opticalor electro-mechanical device and to an electro-opticalor electro-mechanical device comprising said device

    Liquid crystal device

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    The invention relates to a device comprising at least one substrate, an electrode structure and a liquid crystalline polymer film obtainable from a polymerisable LC medium comprising one or more multi-or direactive or monoreactive mesogenic compounds, characterized in that the surface shape of said polymer film can be electrically switched. Furthermore, the invention relates to a process of production of said device, to the use of said device in an electro-opticalor electro-mechanical device and to an electro-opticalor electro-mechanical device comprising said device

    Elimination of the chirp of optical pulses through cascaded nonlinearities in periodically poled lithium niobate waveguides

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    We propose and demonstrate a novel method for the elimination of arbitrary frequency chirp from short optical pulses. The technique is based on the combination of two cascaded second-order nonlinearities in two individual periodically poled lithium niobate waveguides

    The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers

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    We investigate the mechanisms by which high growth temperature spacer layers (HGTSLs) reduce the threshold current of 1.3-/spl mu/m emitting multilayer quantum-dot lasers. Measured optical loss and gain spectra are used to characterize samples that are nominally identical except for the HGTSL. We find that the use of the HGTSL leads to the internal optical mode loss being reduced from 15 /spl plusmn/ 2 to 3.5 /spl plusmn/ 2 cm/sup -1/, better defined absorption features, and more absorption at the ground state resulting from reduced inhomogenous broadening and a greater dot density. These characteristics, together with a reduced defect density, lead to greater modal gain at a given current density

    Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design

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    In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads

    Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

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    Electroluminescence (EL) measurements have been performed on a set of In(Ga)As-GaAs quantum-dot (QD) structures with varying spacer layer growth temperature. At room temperature and low injection current, a superlinear dependence of the integrated EL intensity (IEL) on the injection current is observed. This superlinearity decreases as the spacer layer growth temperature increases and is attributed to a reduction in the amount of nonradiative recombination. Temperature-dependent IEL measurements show a reduction of the IEL with increasing temperature. Two thermally activated quenching processes, with activation energies of ˜ 157 meV and ˜ 320 meV, are deduced and these are attributed to the loss of electrons and holes from the QD ground state to the GaAs barriers. Our results demonstrate that growing the GaAs barriers at higher temperatures improves their quality, thereby increasing the radiative efficiency of the QD emission

    Phase-sensitive wavelength conversion based on cascaded quadratic processes in periodically poled lithium niobate waveguides

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    We propose and experimentally demonstrate a novel scheme of phase-sensitive wavelength conversion, based on a combination of cascaded second-order nonlinear effects in two cascaded periodically poled lithium niobate waveguides

    VLBI observation of giant radio galaxy J1313+696 at 2.3/8.4 GHz

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    We report the result of VLBI observation of the giant radio galaxy J1313+696 (4C +69.15) at 2.3/8.4 GHz, only the core component of the giant radio galaxy was detected in the VLBI observation at the dual frequencies. The result shows a steep spectrum core with α=−0.82\alpha=-0.82 (S∝ΜαS \propto \nu^{\alpha}) between 2.3 GHz and 8.4 GHz. The steep spectrum core may be a sign of renewed activity. Considering also the upper limit flux density of 2.0 mJy at 0.6 GHz from Konar et al. 2004 the core has a GHz-peaked spectrum, implying that the core is compact and absorbed. Further high resolution VLBI observations are needed to identify if the steep spectrum core is consisting of a core and steep spectrum jet.Comment: 3 pages, 3 figure

    Open String Star as a Continuous Moyal Product

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    We establish that the open string star product in the zero momentum sector can be described as a continuous tensor product of mutually commuting two dimensional Moyal star products. Let the continuous variable Îș∈[ 0,∞)\kappa \in [~0,\infty) parametrize the eigenvalues of the Neumann matrices; then the noncommutativity parameter is given by Ξ(Îș)=2tanh⁥(πÎș/4)\theta(\kappa) =2\tanh(\pi\kappa/4). For each Îș\kappa, the Moyal coordinates are a linear combination of even position modes, and the Fourier transform of a linear combination of odd position modes. The commuting coordinate at Îș=0\kappa=0 is identified as the momentum carried by half the string. We discuss the relation to Bars' work, and attempt to write the string field action as a noncommutative field theory.Comment: 30 pages, LaTeX. One reference adde
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