Complex Dynamics of Correlated Electrons in Molecular Double Ionization by an Ultrashort Intense Laser Pulse

With a semiclassical quasi-static model we achieve an insight into the complex dynamics of two correlated electrons under the combined influence of a two-center Coulomb potential and an intense laser field. The model calculation is able to reproduce experimental data of nitrogen molecules for a wide range of laser intensities from tunnelling to over-the-barrier regime, and predicts a significant alignment effect on the ratio of double over single ion yield. The classical trajectory analysis allows to unveil sub-cycle molecular double ionization dynamics.Comment: 5 pages, 5 figures. to appear in Phys. Rev. Lett.(2007

Classical Trajectory Perspective on Double Ionization Dynamics of Diatomic Molecules Irradiated by Ultrashort Intense Laser Pulses

In the present paper, we develop a semiclassical quasi-static model accounting for molecular double ionization in an intense laser pulse. With this model, we achieve insight into the dynamics of two highly-correlated valence electrons under the combined influence of a two-center Coulomb potential and an intense laser field, and reveal the significant influence of molecular alignment on the ratio of double over single ion yield. Analysis on the classical trajectories unveils sub-cycle dynamics of the molecular double ionization. Many interesting features, such as the accumulation of emitted electrons in the first and third quadrants of parallel momentum plane, the regular pattern of correlated momentum with respect to the time delay between closest collision and ionization moment, are revealed and successfully explained by back analyzing the classical trajectories. Quantitative agreement with experimental data over a wide range of laser intensities from tunneling to over-the-barrier regime is presented.Comment: 8 pages, 9 figure

Carbon films grown from plasma on III-V semiconductors

Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies