190 research outputs found

    Deep Learning for Feynman's Path Integral in Strong-Field Time-Dependent Dynamics

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    Feynman's path integral approach is to sum over all possible spatio-temporal paths to reproduce the quantum wave function and the corresponding time evolution, which has enormous potential to reveal quantum processes in classical view. However, the complete characterization of quantum wave function with infinite paths is a formidable challenge, which greatly limits the application potential, especially in the strong-field physics and attosecond science. Instead of brute-force tracking every path one by one, here we propose deep-learning-performed strong-field Feynman's formulation with pre-classification scheme which can predict directly the final results only with data of initial conditions, so as to attack unsurmountable tasks by existing strong-field methods and explore new physics. Our results build up a bridge between deep learning and strong-field physics through the Feynman's path integral, which would boost applications of deep learning to study the ultrafast time-dependent dynamics in strong-field physics and attosecond science, and shed a new light on the quantum-classical correspondence

    Application of evolution-based uncertainty design on gear

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    The evolution of mechanical parameters, a factor affecting the mechanical reliability, has gathered more attention nowadays. However, studies on time varying uncertainty can hardly be found. A new method based on evolution-based uncertainty design (EBUD) is applied to the design of gear in this paper. Considering the wear evolution over the lifetime, a tooth wear’s time-varying uncertainty model based on the continuous-time model and Ito lemma is established. Drift and volatility functions dependent on the drift rate and volatility rate of rotational speed and torque are used to express the time-varying uncertainty of tooth thickness. The method can predict the reliability and provide an instruction in reliability improving, maintenance and repair of the gear system

    Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

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    Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si₃N₄ and SiO₂. While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 10⁶. Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator

    Probing material absorption and optical nonlinearity of integrated photonic materials

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    Optical microresonators with high quality (QQ) factors are essential to a wide range of integrated photonic devices. Steady efforts have been directed towards increasing microresonator QQ factors across a variety of platforms. With success in reducing microfabrication process-related optical loss as a limitation of QQ, the ultimate attainable QQ, as determined solely by the constituent microresonator material absorption, has come into focus. Here, we report measurements of the material-limited QQ factors in several photonic material platforms. High-QQ microresonators are fabricated from thin films of SiO2_2, Si3_3N4_4, Al0.2_{0.2}Ga0.8_{0.8}As and Ta2_2O5_5. By using cavity-enhanced photothermal spectroscopy, the material-limited QQ is determined. The method simultaneously measures the Kerr nonlinearity in each material and reveals how material nonlinearity and ultimate QQ vary in a complementary fashion across photonic materials. Besides guiding microresonator design and material development in four material platforms, the results help establish performance limits in future photonic integrated systems.Comment: Maodong Gao, Qi-Fan Yang and Qing-Xin Ji contributed equally to this work. 9 pages, 4 figures, 1 tabl
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