Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs

Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act as strong non-radiative recombination centers, while others are efficient radiative recombination centers. We characterize luminescence bands in GaAs due to dislocations, stacking faults, and pairs of stacking faults. These results indicate that low-temperature, spatially-resolved photoluminescence imaging can be a powerful tool for identifying luminescence bands of extended defects. This mapping could then be used to identify extended defects in other GaAs samples solely based on low-temperature photoluminescence spectra.Comment: 4 pages, 4 figure

Fundamental mechanisms of energy exchanges in autonomous measurements based on dispersive qubit-light interaction

Measuring an observable that does not commute with the system's Hamiltonian usually leads to a variation of its energy. Unveiling the first link of the von Neumann chain, the quantum meter has to account for this energy change. Here, we consider an autonomous meter-system dynamics: a qubit interacting dispersively with a light pulse propagating in a one-dimensional waveguide. The light pulse (the meter) measures the qubit's state along the $z$-axis while the qubit's Hamiltonian is oriented along another direction. As the interaction is dispersive, photon number is conserved so that energy balance has to be attained by spectral deformations of the light pulse. An accurate and repeatable measurement can be achieved only by employing short pulses, where their spectral deformation is practically undetectable. Increasing the pulse's duration, the measurement's quality drops and the spectral deformation of the scattered field becomes visible. Building on analytical and numerical solutions, we reveal the mechanism underlying this spectral deformation and display how it compensates for the qubit's energy change. We explain the formation of a three-peak structure of the output spectrum and we provide the conditions under which this is observable.Comment: 9 pages plus appendices, 9 figure

Quantum energetics of a non-commuting measurement

When a measurement observable does not commute with a quantum system's Hamiltonian, the energy of the measured system is typically not conserved during the measurement. Instead, energy can be transferred between the measured system and the meter. In this work, we experimentally investigate the energetics of non-commuting measurements in a circuit quantum electrodynamics system containing a transmon qubit embedded in a 3D microwave cavity. We show through spectral analysis of the cavity photons that a frequency shift is imparted on the probe, in balance with the associated energy changes of the qubit. Our experiment provides new insights into foundations of quantum measurement, as well as a better understanding of the key mechanisms at play in quantum energetics.Comment: 9 pages, 4 figure

Van der Waals Engineering of Ferromagnetic Semiconductor Heterostructures for Spin and Valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photo-excited spins in WSe2 and the CrI3 magnetization, due to ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.Comment: Supplementary Materials included. To appear in Science Advance

Ensemble spin relaxation of shallow donor qubits in ZnO

We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling.Comment: 9 pages, 11 figure