124,372 research outputs found

    Formation of Ti–Zr–Cu–Ni bulk metallic glasses

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    Formation of bulk metallic glass in quaternary Ti–Zr–Cu–Ni alloys by relatively slow cooling from the melt is reported. Thick strips of metallic glass were obtained by the method of metal mold casting. The glass forming ability of the quaternary alloys exceeds that of binary or ternary alloys containing the same elements due to the complexity of the system. The best glass forming alloys such as Ti34Zr11Cu47Ni8 can be cast to at least 4-mm-thick amorphous strips. The critical cooling rate for glass formation is of the order of 250 K/s or less, at least two orders of magnitude lower than that of the best ternary alloys. The glass transition, crystallization, and melting behavior of the alloys were studied by differential scanning calorimetry. The amorphous alloys exhibit a significant undercooled liquid region between the glass transition and first crystallization event. The glass forming ability of these alloys, as determined by the critical cooling rate, exceeds what is expected based on the reduced glass transition temperature. It is also found that the glass forming ability for alloys of similar reduced glass transition temperature can differ by two orders of magnitude as defined by critical cooling rates. The origins of the difference in glass forming ability of the alloys are discussed. It is found that when large composition redistribution accompanies crystallization, glass formation is enhanced. The excellent glass forming ability of alloys such as Ti34Zr11Cu47Ni8 is a result of simultaneously minimizing the nucleation rate of the competing crystalline phases. The ternary/quaternary Laves phase (MgZn2 type) shows the greatest ease of nucleation and plays a key role in determining the optimum compositions for glass formation

    A Probabilistic Embedding Clustering Method for Urban Structure Detection

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    Urban structure detection is a basic task in urban geography. Clustering is a core technology to detect the patterns of urban spatial structure, urban functional region, and so on. In big data era, diverse urban sensing datasets recording information like human behaviour and human social activity, suffer from complexity in high dimension and high noise. And unfortunately, the state-of-the-art clustering methods does not handle the problem with high dimension and high noise issues concurrently. In this paper, a probabilistic embedding clustering method is proposed. Firstly, we come up with a Probabilistic Embedding Model (PEM) to find latent features from high dimensional urban sensing data by learning via probabilistic model. By latent features, we could catch essential features hidden in high dimensional data known as patterns; with the probabilistic model, we can also reduce uncertainty caused by high noise. Secondly, through tuning the parameters, our model could discover two kinds of urban structure, the homophily and structural equivalence, which means communities with intensive interaction or in the same roles in urban structure. We evaluated the performance of our model by conducting experiments on real-world data and experiments with real data in Shanghai (China) proved that our method could discover two kinds of urban structure, the homophily and structural equivalence, which means clustering community with intensive interaction or under the same roles in urban space.Comment: 6 pages, 7 figures, ICSDM201

    Green's function for the Relativistic Coulomb System via Sum Over Perturbation Series

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    We evaluate the Green's function of the D-dimensional relativistic Coulomb system via sum over perturbation series which is obtained by expanding the exponential containing the potential term V(x)V({\bf x)} in the path integral into a power series. The energy spectra and wave functions are extracted from the resulting amplitude.Comment: 13 pages, ReVTeX, no figure

    Mass Spectrum and Bounds on the Couplings in Yukawa Models With Mirror-Fermions

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    The SU(2)L⊗SU(2)R\rm SU(2)_L\otimes SU(2)_R symmetric Yukawa model with mirror-fermions in the limit where the mirror-fermion is decoupled is studied both analytically and numerically. The bare scalar self-coupling λ\lambda is fixed at zero and infinity. The phase structure is explored and the relevant phase transition is found to be consistent with a second order one. The fermionic mass spectrum close to that transition is discussed and a first non-perturbative estimate of the influence of fermions on the upper and lower bounds on the renormalized scalar self-coupling is given. Numerical results are confronted with perturbative predictions.Comment: 7 (Latex) page

    Experimental investigation of a double-diffused MOS structure

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    Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors

    Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure

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    A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area
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