3,188 research outputs found
On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer
A self-consistent calculation of the density of states and the spectral
density function is performed in a two-dimensional spin-polarized hole system
based on a multiple-scattering approximation. Using parameters corresponding to
GaMnAs thin layers, a wide range of Mn concentrations and hole densities have
been explored to understand the nature, localized or extended, of the
spin-polarized holes at the Fermi level for several values of the average
magnetization of the Mn ystem. We show that, for a certain interval of Mn and
hole densities, an increase on the magnetic order of the Mn ions come together
with a change of the nature of the states at the Fermi level. This fact
provides a delocalization of spin-polarized extended states anti-aligned to the
average Mn magnetization, and a higher spin-polarization of the hole gas. These
results are consistent with the occurrence of ferromagnetism with relatively
high transition temperatures observed in some thin film samples and
multilayered structures of this material.Comment: 3 page
Magnetic ordering in GaAlAs:Mn double well structure
The magnetic order in the diluted magnetic semiconductor barrier of double
AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo
simulations. A confinement adapted RKKY mechanism is implemented for indirect
exchange between Mn ions mediated by holes. It is shown that, depending on the
barrier width and the hole concentration a ferromagnetic or a spin-glass order
can be established.Comment: 3 figure
Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
The occurrence of inhomogeneous spin-density distribution in multilayered
ferromagnetic diluted magnetic semiconductor nanostructures leads to strong
dependence of the spin-polarized transport properties on these systems. The
spin-dependent mobility, conductivity and resistivity in
(Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a
function of temperature, scaled by the average magnetization of the diluted
magnetic semiconductor layers. An increase of the resistivity near the
transition temperature is obtained. We observed that the spin-polarized
transport properties changes strongly among the three materials.Comment: 3 pages, 4 figure
A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
We investigate the spin-polarized transport of GaMnAs nanolayers in which a
ferromagnetic order exists below a certain transition temperature. Our
calculation for the self-averaged resistivity takes into account the existence
of an impurity band determining the extended ("metallic" transport) or
localized (hopping by thermal excitation) nature of the states at and near the
Fermi level. Magnetic order and resistivity are inter-related due to the
influence of the spin polarization of the impurity band and the effect of the
Zeeman splitting on the mobility edge. We obtain, for a given range of Mn
concentration and carrier density, a "metallic" behavior in which the transport
by extended carriers dominates at low temperature, and is dominated by the
thermally excited localized carriers near and above the transition temperature.
This gives rise to a conspicuous hump of the resistivity which has been
experimentally observed and brings light onto the relationship between
transport and magnetic properties of this material
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