Nondestructive imaging of atomically thin nanostructures buried in silicon

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope–based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.ISSN:2375-254

2D-3D crossover in a dense electron liquid in silicon

Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.Comment: 9 pages, 4 figures, supplementary informatio

Photocatalytic abstraction of hydrogen atoms from water using hydroxylated graphitic carbon nitride for hydrogenative coupling reactions

Employing pure water, the ultimate green source of hydrogen donor to initiate chemical reactions that involve a hydrogen atom transfer (HAT) step is fascinating but challenging due to its large H−O bond dissociation energy (BDEH-O=5.1 eV). Many approaches have been explored to stimulate water for hydrogenative reactions, but the efficiency and productivity still require significant enhancement. Here, we show that the surface hydroxylated graphitic carbon nitride (gCN−OH) only requires 2.25 eV to activate H−O bonds in water, enabling abstraction of hydrogen atoms via dehydrogenation of pure water into hydrogen peroxide under visible light irradiation. The gCN−OH presents a stable catalytic performance for hydrogenative N−N coupling, pinacol-type coupling and dehalogenative C−C coupling, all with high yield and efficiency, even under solar radiation, featuring extensive impacts in using renewable energy for a cleaner process in dye, electronic, and pharmaceutical industries

Studies in Physisorption and Chemisorption on Si(100)-2x1

Scanning Tunneling Microscopy (STM) has been used to study the physisorption and chemisorption behaviour for three simple organic haloalkanes; 1,5 Dichloropentane (DCP), Bromomethane (CH3Br) and Chloromethane (CH3Cl)) on Si(100) 2x1, at temperatures ranging from 270 K to room temperature. The results were interpreted by Density Functional Theory (DFT) performed by collaborators at McGill University and the University of Liverpool. Physisorbed molecules of DCP were found to self assemble into stable lines aligned predominantly perpendicular to the Si dimer pair rows on the surface. A novel mechanism for line formation of Dichloropentane, termed, Dipole Directed Assembly (DDA), was elucidated by DFT calculations. For CH3Br three different patterns of dissociative attachment of reaction products (CH3 and Br/Cl) were observed, and assigned to three reaction pathways. These experimentally determined relative yields were used to obtain differences in reaction activation energy, Delta Ea, between the reaction pathways. These, in turn, were compared with computed differences in reaction barriers, Delta Eb, obtained ab initio for the same pathways by DFT. For CH3Cl, two single-molecule patterns of attachment were found, and a new reaction pathway for attaching CH3Cl in long chains of alternating CH3 and Cl was discovered. The mechanisms for chain growth were determined experimentally by examination of single molecular steps. This mechanism was explained ab initio by DFT to be the result of relative barrier heights for the possible chain-growth pathways.Ph

Fabrication of Si: P Delta-Doped Layers with Varying Doping Densities

We are developing a programme to fabricate atomic scale device structures of phosphorus atoms in a silicon substrate. The first step in this process is the fabrication of 2D Si:P delta-doped layers in silicon, which have recently also been theoretically studied in terms of electrical transport by Hwang and Das Sarma (E. H. Hwang and S. Das Sarma, Phys. Rev. B, 87, 125411). The Si:P delta-doped layers are expected to exhibit interesting behaviors when the density of the P atom doping is varied through the metal-insulator transition, as well as for the high (~ 1014 per cm2) and low (below 1013) doping regimes. We are fabricating Si:P delta-doped layers of varying densities from around 6 x 1012 to 2 x 1014 P atoms per cm2, which we will use to experimentally assess the theoretical findings of Hwang and Das Sarma. Details of the fabrication process will also be discussed

Orbital physics of perovskites for the oxygen evolution reaction

The study of magnetic perovskite oxides has led to novel and very active compounds for O2 generation and other energy applications. Focusing on three different case studies, we summarise the bulk electronic and magnetic properties that initially serve to classify active perovskite catalysts for the oxygen evolution reaction (OER). Ab-initio calculations centred on the orbital physics of the electrons in the d-shell provide a unique insight into the complex interplay between spin dependent interactions versus selectivity and OER reactivity that occurs in these transition-metal oxides. We analyse how the spin, orbital and lattice degrees of freedom establish rational design principles for OER. We observe that itinerant magnetism serves as an indicator for highly active oxygen electro-catalysts. Optimum active sites individually have a net magnetic moment, giving rise to exchange interactions which are collectively ferromagnetic, indicative of spin dependent transport. In particular, optimum active sites for OER need to possess sufficient empty orthogonal orbitals, oriented towards the ligands, to preserve an incoming spin aligned electron flow. Calculations from first principles open up the possibility of anticipating materials with improved electro-catalytic properties, based on orbital engineering

Orbital physics of perovskites for the oxygen evolution reaction

\u3cp\u3eThe study of magnetic perovskite oxides has led to novel and very active compounds for O\u3csub\u3e2\u3c/sub\u3e generation and other energy applications. Focusing on three different case studies, we summarise the bulk electronic and magnetic properties that initially serve to classify active perovskite catalysts for the oxygen evolution reaction (OER). Ab-initio calculations centred on the orbital physics of the electrons in the d-shell provide a unique insight into the complex interplay between spin dependent interactions versus selectivity and OER reactivity that occurs in these transition-metal oxides. We analyse how the spin, orbital and lattice degrees of freedom establish rational design principles for OER. We observe that itinerant magnetism serves as an indicator for highly active oxygen electro-catalysts. Optimum active sites individually have a net magnetic moment, giving rise to exchange interactions which are collectively ferromagnetic, indicative of spin dependent transport. In particular, optimum active sites for OER need to possess sufficient empty orthogonal orbitals, oriented towards the ligands, to preserve an incoming spin aligned electron flow. Calculations from first principles open up the possibility of anticipating materials with improved electro-catalytic properties, based on orbital engineering.\u3c/p\u3

Single-Electron Induces Double-Reaction by Charge Delocalization

Injecting an electron by scanning tunneling microscope into a molecule physisorbed at a surface can induce dissociative reaction of one adsorbate bond. Here we show experimentally that a single low-energy electron incident on ortho-diiodobenzene physisorbed on Cu(110) preferentially induces reaction of both of the C–I bonds in the adsorbate, with an order-of-magnitude greater efficiency than for comparable cases of single bond breaking. A two-electronic-state model was used to follow the dynamics, first on an anionic potential-energy surface (pes*) and subsequently on the ground state pes. The model led to the conclusion that the two-bond reaction was due to the delocalization of added charge between adjacent halogen-atoms of ortho-diiodobenzene through overlapping antibonding orbitals, in contrast to the cases of para-dihalobenzenes, studied earlier, for which electron-induced reaction severed exclusively a single carbon–halogen bond. The finding that charge delocalization within a single molecule can readily cause concerted two-bond breaking suggests the more general possibility of intra- and also intermolecular charge delocalization resulting in multisite reaction. Intermolecular charge delocalization has recently been proposed by this laboratory to account for reaction in physisorbed molecular chains (Ning, Z.; Polanyi, J. C. Angew. Chem., Int. Ed. 2013, 52, 320−324)