Mathematical model for a radioactive marker in silicide formation

A mathematical model is constructed to interpret the profiles of radioactive (^31)Si tracers in a computer simulation proposed by R. Pretorius and A. P. Botha [Thin Solid Films 91, 99 (1982)]. This model assumes that only Si moves in the silicide, that the Si moves interstitially and convectively, and that the moving Si can exchange sites with the stationary Si in the silicide lattice. An analytical solution of this model is given and confirms the published computer simulation data. However, it is shown that the model is physically inadequate. Solutions of another model which assumes that metal, instead of Si, is the moving species for silicide formation (either interstitially, or substitutionally, or both), with self-diffusion of (^31)Si in the silicide during silicide formation. Almost all the experimental data can be fitted by solutions of both models. These examples demonstrate that radioactive tracer experiments alone are insufficient to determine the moving species when a solid binary compound film forms by reaction of adjacent elemental layers. Both inert marker and tracer data are needed to identify the moving species and the mechanisms

A structure marker study for Pd_2Si formation: Pd moves in epitaxial Pd_2Si

A sample with the configuration Si (111)/single crystalline Pd_2Si/polycrystalline Pd_2Si/Pd is used to study the dominant moving species during subsequent Pd_2Si formation by annealing at 275 °C. The interface between monocrystalline and polycrystalline Pd_2Si is used as a marker to monitor the dominant moving species. The result shows that Pd is the dominant moving species in the monocrystal

Improvement of thermally formed nickel silicide by ion irradiation

A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been observed after low‐dose (10^(13)~3 × 10^(14) ion/cm^2) Xe irradiation of an As‐deposited Ni film. Measurements have also been made on samples that contained a thin impurity layer formed intentionally between the silicon substrate and the evaporated nickel film. The impurity layer was thick enough to prevent thermal silicide formation in unirradiated samples, but in irradiated samples, the silicide formation was not prevented. Similar results were obtained for As implantations. We attribute this effect to ion mixing of the interfacial layer. These results demonstrate that a low‐dose irradiation can render the process of silicide formation by thermal annealing more tolerant to interfacial impurities. The concept is of potential significance to VLSI technology

Finite-Size Scaling in Two-dimensional Continuum Percolation Models

We test the universal finite-size scaling of the cluster mass order parameter in two-dimensional (2D) isotropic and directed continuum percolation models below the percolation threshold by computer simulations. We found that the simulation data in the 2D continuum models obey the same scaling expression of mass M to sample size L as generally accepted for isotropic lattice problems, but with a positive sign of the slope in the ln-ln plot of M versus L. Another interesting aspect of the finite-size 2D models is also suggested by plotting the normalized mass in 2D continuum and lattice bond percolation models, versus an effective percolation parameter, independently of the system structure (i.e. lattice or continuum) and of the possible directions allowed for percolation (i.e. isotropic or directed) in regions close to the percolation thresholds. Our study is the first attempt to map the scaling behaviour of the mass for both lattice and continuum model systems into one curve.Comment: 9 pages, Revtex, 2 PostScript figure

Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme

Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi_(2.3) film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min

Palladium silicide formation under the influence of nitrogen and oxygen impurities

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and 15N(p,alpha)12C or 18O(p,alpha)15N nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting "snow-plowing" effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species, when the silicide front reaches the nitrogen-rich region

An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si

A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on and Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed