Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire, using the tip as a movable gate. Images of dot conductance vs. tip position at T = 4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots

Effects of magnetic field and disorder on electronic properties of Carbon Nanotubes

Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to induce a metal-insulator transition (MIT) in absence of disorder, and surprisingly disorder does not affect significantly the MIT. These results may find confirmation through tunneling experimentsComment: 4 pages, 6 figures. Phys. Rev. B (in press

Coulomb Gap and Correlated Vortex Pinning in Superconductors

The positions of columnar pins and magnetic flux lines determined from a decoration experiment on BSCCO were used to calculate the single--particle density of states at low temperatures in the Bose glass phase. A wide Coulomb gap is found, with gap exponent $s \approx 1.2$, as a result of the long--range interaction between the vortices. As a consequence, the variable--range hopping transport of flux lines is considerably reduced with respect to the non--interacting case, the effective Mott exponent being enhanced from $p_0 = 1/3$ to $p_{\rm eff} \approx 0.5$ for this specific experiment.Comment: 10 pages, Revtex, 4 figures appended as uu-encoded postscript files, also available as hardcopies from [email protected]

Self-directed growth of AlGaAs core-shell nanowires for visible light applications

Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.Comment: 20 pages, 7 figure

Lamb Shift of 3P and 4P states and the determination of α\alpha

The fine structure interval of P states in hydrogenlike systems can be determined theoretically with high precision, because the energy levels of P states are only slightly influenced by the structure of the nucleus. Therefore a measurement of the fine structure may serve as an excellent test of QED in bound systems or alternatively as a means of determining the fine structure constant $\alpha$ with very high precision. In this paper an improved analytic calculation of higher-order binding corrections to the one-loop self energy of 3P and 4P states in hydrogen-like systems with low nuclear charge number $Z$ is presented. A comparison of the analytic results to the extrapolated numerical data for high $Z$ ions serves as an independent test of the analytic evaluation. New theoretical values for the Lamb shift of the P states and for the fine structure splittings are given.Comment: 33 pages, LaTeX, 4 tables, 4 figure

Structure of Flux Line Lattices with Weak Disorder at Large Length Scales

Dislocation-free decoration images containing up to 80,000 vortices have been obtained on high quality Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ superconducting single crystals. The observed flux line lattices are in the random manifold regime with a roughening exponent of 0.44 for length scales up to 80-100 lattice constants. At larger length scales, the data exhibit nonequilibrium features that persist for different cooling rates and field histories.Comment: 4 pages, 3 gif images, to appear in PRB rapid communicatio