A convenient basis for the Izergin-Korepin model

We propose a convenient orthogonal basis of the Hilbert space for the Izergin-Korepin model (or the quantum spin chain associated with the $A^{(2)}_{2}$ algebra). It is shown that the monodromy-matrix elements acting on the basis take relatively simple forms (c.f. acting on the original basis ), which is quite similar as that in the so-called F-basis for the quantum spin chains associated with $A$-type (super)algebras. As an application, we present the recursive expressions of Bethe states in the basis for the Izergin-Korepin model.Comment: 24 pages, no figure

Electrocardiogram Baseline Wander Suppression Based on the Combination of Morphological and Wavelet Transformation Based Filtering

One of the major noise components in electrocardiogram (ECG) is the baseline wander (BW). Effective methods for suppressing BW include the wavelet-based (WT) and the mathematical morphological filtering-based (MMF)algorithms. However, the T waveform distortions introduced by the WTand the rectangular/trapezoidal distortions introduced by MMF degrade the quality of the output signal. Hence, in this study, we introduce a method by combining the MMF and WTto overcome the shortcomings of both existing methods. To demonstrate the effectiveness of the proposed method, artificial ECG signals containing a clinicalBW are used for numerical simulation, and we also create a realistic model of baseline wander to compare the proposed method with other state-of-the-art methods commonly used in the literature. /e results show that the BW suppression effect of the proposed method is better than that of the others. Also, the new method is capable of preserving the outline of the BW and avoiding waveform distortions caused by the morphology filter, thereby obtaining an enhanced quality of ECG

Spectral Features of the Solar Transition Region and Chromospheric Lines at Flare Ribbons Observed with IRIS

We report on the spectral features of the Si IV 1402.77 \AA, C II 1334.53 \AA, and Mg II h or k lines, formed in the layers from the transition region to the chromosphere, in three two-ribbon flares (with X-, M-, and C-class) observed with IRIS. All the three lines show significant redshifts within the main flare ribbons, which mainly originate from the chromospheric condensation during the flares. The average redshift velocities of the Si IV line within the main ribbons are 56.6, 25.6, and 10.5 km s$^{-1}$ for the X-, M-, and C-class flares, respectively, which show a decreasing tendency with the flare class. The C II and Mg II lines show a similar tendency but with smaller velocities compared to the Si IV line. Additionally, the Mg II h or k line shows a blue-wing enhancement in the three flares in particular at the flare ribbon fronts, which is supposed to be caused by an upflow in the upper chromosphere due to the heating of the atmosphere. Moreover, the Mg II h or k line exhibits a central reversal at the flare ribbons, but turns to pure emission shortly after 1--4 minutes. Correspondingly, the C II line also shows a central reversal but in a smaller region. However, for the Si IV line, the central reversal is only found in the X-class flare, but not in the other two flares. As usual, the central reversal of these lines can be caused by the opacity effect. This implies that in addition to the optically thick lines (C II and Mg II lines), the Si IV line can become optically thick in a strong flare, which is likely related to the nonthermal electron beam heating.Comment: 26 pages, 13 figures, accepted for publication in ApJ

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.Comment: 10 pages, 4 figures. Accepted by Nanotechnolog