Silicon solar cell process development, fabrication and analysis

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap

Microcrystalline silicon growth for heterojunction solar cells

Microcrystalline Si (m-Si) films with a 1.7eV energy bandgap and crystal size of several hundred A were e-beam evaporated on single crystalline Si (c-Si) to form a heterojunction with the substrate, or a window layer to a single crystalline p-n junction (heteroface structure). The goal was to enhance Voc by such uses of the larger bandgap m-Si, with the intriguing prospect of forming heterostructures with exact lattice match on each layer. The heterojunction structure was affected by interface and shunting problems and the best Voc achieved was only 482mV, well below that of single crystal Si homojunctions. The heteroface structure showed promise for some of the samples with p m-Si/p-n structure (the complementary structure did not show any improvement). Although several runs with different deposition conditions were run, the results were inconsistent. Any Voc enhancement obtained was too small to compensate for the current loss due to the extra absorption and poor carrier transport properties of the m-Si film

Silicon solar cell process development, fabrication, and analysis

Two large cast ingots were evaluated. Solar cell performance versus substrate position within the ingots was obtained and the results are presented. Dendritic web samples were analyzed in terms of structural defects, and efforts were made to correlate the data with the performance of solar cells made from the webs

Silicon solar cell process development, fabrication and analysis

Solar cells were fabricated from EFG ribbons dendritic webs, cast ingots by heat exchanger method, and cast ingots by ubiquitous crystallization process. Baseline and other process variations were applied to fabricate solar cells. EFG ribbons grown in a carbon-containing gas atmosphere showed significant improvement in silicon quality. Baseline solar cells from dendritic webs of various runs indicated that the quality of the webs under investigation was not as good as the conventional CZ silicon, showing an average minority carrier diffusion length of about 60 um versus 120 um of CZ wafers. Detail evaluation of large cast ingots by HEM showed ingot reproducibility problems from run to run and uniformity problems of sheet quality within an ingot. Initial evaluation of the wafers prepared from the cast polycrystalline ingots by UCP suggested that the quality of the wafers from this process is considerably lower than the conventional CZ wafers. Overall performance was relatively uniform, except for a few cells which showed shunting problems caused by inclusions

On the capacities of bipartite Hamiltonians and unitary gates

We consider interactions as bidirectional channels. We investigate the capacities for interaction Hamiltonians and nonlocal unitary gates to generate entanglement and transmit classical information. We give analytic expressions for the entanglement generating capacity and entanglement-assisted one-way classical communication capacity of interactions, and show that these quantities are additive, so that the asymptotic capacities equal the corresponding 1-shot capacities. We give general bounds on other capacities, discuss some examples, and conclude with some open questions.Comment: V3: extensively rewritten. V4: a mistaken reference to a conjecture by Kraus and Cirac [quant-ph/0011050] removed and a mistake in the order of authors in Ref. [53] correcte

Chiral symmetry breaking in a uniform external magnetic field II. Symmetry restoration at high temperatures and chemical potentials

Chiral symmetry is dynamically broken in quenched, ladder QED at weak gauge couplings when an external magnetic field is present. In this paper, we show that chiral symmetry is restored above a critical chemical potential and the corresponding phase transition is of first order. In contrast, the chiral symmetry restoration at high temperatures (and at zero chemical potential) is a second order phase transition.Comment: Latex; 12 pages; 8 postscript figures include

Identification and verification of frequency-domain models for XV-15 tilt-rotor aircraft dynamics

Frequency-domain methods are used to extract the open-loop dynamics of the XV-15 tilt-rotor aircraft from flight test data for the cruise condition (V = 170 knots). The frequency responses are numerically fitted with transfer-function forms to identify equivalent model characteristics. The associated handling quality parameters meet or exceed Level 2, Category A, requirements for fixed-wing military aircraft. Step response matching is used to verify the time-domain fidelity of the transfer-function models for the cruise and hover flight conditions. The transient responses of the model and aircraft are in close agreement in all cases, except for the normal acceleration response to elevator deflection in cruise. This discrepancy is probably due to the unmodeled rotor rpm dynamics. The utility of the frequency-domain approach for dynamics identification and analysis is clearly demonstrated