17 research outputs found

    Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

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    The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions

    Morphological, chemical, and electronic changes of the conjugated polymer PTB7 with thermal annealing

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    This work was supported by the Office of Naval Research NDSEG fellowship (V.S.) and the Department of Energy SCGSR Program (L.J.P.). Work was partially supported by the Department of the Navy, Office of Naval Research Award No. N00014-14-1-0580 (S.D.O., M.F.T.). L.K.J., I.R., and I.D.W.S. were supported by the Engineering and Physical Sciences Research Council (grants EP/L017008/1 and EP/L012294/1 ). I.D.W.S. also acknowledges support from a Royal Society Wolfson Research Merit Award. Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515.There is considerable interest in improving the performance of organic optoelectronic devices through processing techniques. Here, we study the effect of high-temperature annealing on the properties of the semiconducting polymer PTB7 and PTB7:fullerene blends, of interest as efficient organic photovoltaic (OPV) devices. Annealing to moderate temperature improves the PTB7 morphology and optoelectronic properties. High-temperature annealing also improves morphology but results in poorer optoelectronic properties. This is a result of side chain cleavage that creates by-products that act as trap states, increasing electronic disorder and decreasing mobility. We further observe changes to the PTB7 chemical structure after thermal cleavage that are similar to those following solar irradiation. This implies that side chain cleavage is an important mechanism in device photodegradation, which is a major ?burn-in? loss mechanism in OPV. These results lend insight into side chain cleavage as a method of improving optoelectronic properties and suggest strategies for improvement in device photostability.Publisher PDFPeer reviewe

    Highly efficient fullerene and non-fullerene based ternary organic solar cells incorporating a new tetrathiocin-cored semiconductor

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    A new dual-chain oligothiophene-based organic semiconductor, EH-5T-TTC, is presented. The molecule contains two conjugated chains linked by a fused tetrathiocin core. X-ray crystallography reveals a boat conformation within the 8-membered sulfur heterocycle core and extensive π-π and intermolecular sulfur-sulfur interactions in the bulk, leading to a 2-dimensional structure. This unusual molecule has been studied as a ternary component in organic solar cell blends containing the electron donor PTB7-Th and both fullerene (PC71BM) and non-fullerene acceptors ITIC and EH-IDTBR. By incorporating EH-5T-TTC as a ternary component, the power conversion efficiency of the binary blends containing non-fullerene acceptor increases by 17 % (from 7.8 % to 9.2 %) and by 85 % for the binary blend with fullerene acceptor (from 3.3 % to 6.3%). Detailed characterisation of the ternary blend systems implies that the ternary small molecule EH-5T-TTC functions differently in polymer:fullerene and polymer:non-fullerene blends and has dual functions of morphology modification and complementary spectral absorption

    Morphology changes upon scaling a high-efficiency, solution-processed solar cell

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    Solution processing via roll-to-roll (R2R) coating promises a low cost, low thermal budget, sustainable revolution for the production of solar cells. Poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3′′′-di(2-octyldodecyl)-2,2′;5′,2′′;5′′,2′′′-quaterthiophen-5,5-diyl)], PffBT4T-2OD, has recently been shown to achieve high power conversion efficiency (&gt;10%) paired with multiple acceptors when thick films are spun-coat from hot solutions. We present detailed morphology studies of PffBT4T-2OD based bulk heterojunction films deposited by the volume manufacturing compatible techniques of blade-coating and slot-die coating. Significant aspects of the film morphology, the average crystal domain orientation and the distribution of the characteristic phase separation length scales, are remarkably different when deposited by the scalable techniques vs. spun-coat. Yet, we find that optimized blade-coated devices achieve PCE &gt; 9.5%, nearly the same as spun-coat. These results challenge some widely accepted propositions regarding what is an optimal BHJ morphology and suggest the hypothesis that diversity in the morphology that supports high performance may be a characteristic of manufacturable systems, those that maintain performance when coated thicker than ≈200 nm. In situ measurements reveal the key differences in the solidification routes for spin- and blade-coating leading to the distinct film structures.</p
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