Influence of the HiPIMS voltage on the time resolved platinum ions energy distributions

International audienceHigh Power Impulse magnetron sputtering (HiPIMS) is a common way to create a high and dense ionized metallic vapor without the use of an alternative ionizing device, like radio frequency loops. HiPIMS has been used to perform the deposition of platinum thin films in order to control their morphology. This feature known to depend on the energy of the Pt species incoming onto the substrate during the deposition has to be carefully studied. Therefore, it's necessary to study the ions energy distribution during the sputtering pulse and to follow its evolution with the HiPIMS regime. Pictures of this evolution are presented

Technologie des réacteurs à plasmas: Plasmas inductifset capacitifs en basse pression

International audienceP. 9. Préface / Alix GicquelP. 11. Introduction : le réseau Plasmas froids et la Mission des Ressources et Compétences Technologiques du CNRS / Gérard Lelièvre, Françoise Massines et Elodie Girard I - Génération et dissipation d'énergie P. 17. I-1. Absorbtion et dissipation d'énergie dans un plasma hors équilibre / J.-P. Bœuf P. 49. I-2. Plasmas hors-équilibre à des pressions atmosphériques / K. Hassouni, F. Massines, J.-M. Pouvesle P. 109. I-3. Les plasmas thermiques / A. Gleizes II - Accès aux caractéristiques et aux espèces du plasma P. 141. II-1. Le plasma d'arc dans le procédé de projection thermique / J.-F. Couderc P. 159. II-2. Mesures de sondes électrostatiques en plasma basse pression / S. Béchu P. 225. II-3. Diagnostics laser et spectroscopie de masse dans les plasmas réactifs / J. Jolly P. 255. II-4. Saturation optique et autres pièges en spectroscopie laser / N. Sadeghi P. 275. II-5. Pièges en spectroscopie de masse / A. Granier P. 297. II-6. Source d'ionisation par micro pointes pour la spectroscopie de masse spatiale / F. Cipriani, J.-M. Illiano, J.-J. Berthelier III - Technologie des réacteurs à plasmas P. 323. III-1. Plasmas micro-onde basses pressions excités à la résonance cyclotronique électronique / Y. Arnal P. 353. III-2. Technologie des réacteur à plasma: Dimensionnement des réacteurs à Plasma micro-onde haute pression / F. Sylva, G. Hagelaar, K. Hassouni, A. Gicquel P. 367. III-3. Technologie des réacteurs à plasmas: Plasmas inductifs et capacitifs en basse pression / Ph. Lefaucheux P. 391. III-4. Les Plasmas thermique / C. Verdy, R. Boblot, H. Deng, P. Gougeon, C. Codde

Deep etching processes for silicon micro- and nano-machining

PosterInternational audienc

Cryoetching mechanisms and STiGer process evaluation

International audienc

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

International audienceThe evolution of silicon cryoetching is reported in this topical review, from its very first introduction by a Japanese team to today's advanced technologies. The main advances in terms of the performance and comprehension of the mechanisms are chronologically presented. After presenting the principle of silicon cryoetching, the main defects encountered in cryoetching (such as undercut, bowing and crystal orientation dependent etching) are presented and discussed. Mechanisms involved in SiOxFy passivation layer growth in standard cryoetching are investigated through several in situ characterization experiments. The STiGer process and alternative cryoetching processes for high-aspect-ratio structures are also proposed to enhance the process robustness. The over-passivation regime, which can provide self-organized columnar microstructures, is presented and discussed. Finally, advanced technologies, such as the cryoetching of sub-20 nm features and porous OSG low-k cryoetching, are described

Cryogenic Atomic Layer Etching of SiO2

International audienc

Microplasma arrays operating in DC fabricated by microelectronic technologies

International audienc

Reproducible process for Titanium deep etching

OralInternational audienc

Electrical and spectroscopic study of DC microdischarges made in alumina

Microdischarges are under investigation for some applications such as bright light microsources for MEMS devices. Some other applications may emerge in materials processing. Different microdischarges have been recently designed at the Plasma Application Laboratory of UTDallas. A clean room was necessary for the preparation of the samples. An electrodeposition of gold and nickel was performed on a 650 µm thick square of alumina. Alumina was chosen because of its good properties in terms of hardness and ability to resist to high temperature. After deposition, the sample was drilled on different places by a laser process. Two different diameters were available for the channel: 150 µm and 250 µm. The two electrodes were connected to a DC power supply through a 100 kΩ resistance to avoid arcing. The microdischarge was mounted in a small reactor to control pressure and to operate the plasma in different gases (He, Ar, Air). I-V curves were taken in different gases and for different pressures from 60 mbar to 1.6 bar. Up to 10 mA current was reached at atmospheric pressure in He, which corresponds to an injected power as high as 2 W in the 0.01 mm3 channel. Optical emission spectroscopy as well as electrical characterization were carried out for the different gases and will be presented at the conference