Testing a parametric quantile-regression model with an endogenous explanatory variable against a nonparametric alternative

This paper is concerned with inference about a function g that is identified by a conditional quantile restriction involving instrumental variables. The paper presents a test of the hypothesis that g belongs to a finite-dimensional parametric family against a nonparametric alternative. The test is not subject to the ill-posed inverse problem of nonparametric instrumental variable estimation. Under mild conditions, the test is consistent against any alternative model. In large samples, its power is arbitrarily close to 1 uniformly over a class of alternatives whose distance from the null hypothesis is proportional to n(-1/2), where it is the sample size. Monte Carlo simulations illustrate the finite-sample performance of the test. (C) 2009 Elsevier B.V. All rights reserved

Transparent electrode of nanoscale metal film for optoelectronic devices

This paper reviews the principles, impediments, and recent progress in the development of ultrathin flexible Ag electrodes for use in flexible optoelectronic devices. Thin Ag- based electrodes are promising candidates for next- generation flexible transparent electrodes. Thin Ag- based electrodes that have a microcavity structure show the best device performance, but have relatively low optical transmittance (OT) due to reflection and absorption of photons by the thin Ag; this trait causes problems such as spectral narrowing and change of emission color with viewing angle in white organic light- emitting diodes. Thinning the Ag electrode to < - 10 nm thickness (ultrathin Ag) is an approach to overcome these problems. This ultrathin Ag electrode has a high OT, while providing comparable sheet resistance similar to indium tin oxide. As the OT of the electrode increases, the cavity is weakened, so the spectral width of the emission and the angular color stability are increased. (C) 2015 Society of Photo- Optical Instrumentation Engineers (SPIE)1162Ysciescopu

Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy

The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface.open151

Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy

The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface.open151

Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS). Transconductance was decreased by 10% in the frequency range of 10 Hz-10 kHz at the negative gate bias, but it was increased at the positive one. In the DLTS spectra, two hole trap-like signals corresponding to surface states were only observed at the negative pulse bias, whereas the DX-center with the activation energy of 0.42 +/- 0.01 eV were observed at the positive one. The activation energy agrees well with that obtained from the temperature dependence of the positive transconductance dispersion, 0.39 +/- 0.03 eV. These provide evidence that the positive and negative transconductance dispersions are due to the DX center and surface states, respectively.open9

VISUAL-PERCEPTUAL-MOTOR SKILLS OF ELITE SILAT ATHLETES WHEN RESPONDING TO VARIOUS COMBAT SITUATIONS THROUGH AN INTEGRATED STEREOSCOPIC SYSTEM

Understanding the visual-perceptual-motor skill of an athlete can help optimize the periodization of a training plan. This study was designed to explore the visual-perceptual-motor skill of ten male elite Silat athlete when tasked to react to a set of projected video stimuli comprised of specific combat attack situations; side kicks, roundhouse kicks and crocodiles. A customized stereoscopic video system projected the stimuli in two- and three-dimensions with the latter being added with the aim of improving combat realism. This system synchronously recorded the gaze and movement behaviours of the participants when they responded to the combat situations. No differences in visual search behaviour, quiet eye and reaction time were found when tasked to respond between two- and three-dimensional videos, which may be due to the complexity of the stimulus. There was a significantly higher quantity and longer duration of fixations spent on the trunk of the opponent as compared to other areas of the body. Reaction time was also significantly different in the side kicks (slower responses) as compared to other attacks. Results from this study can pave way for future studies that seek to investigate how visual-perceptual-motor skill differs between expertise levels in the sport of Silat and serve as a basis for targeted coaching to enhance combat Silat performance

HOXA10 controls osteoblastogenesis by directly activating bone regulatory and phenotypic genes

HOXA10 is necessary for embryonic patterning of skeletal elements, but its function in bone formation beyond this early developmental stage is unknown. Here we show that HOXA10 contributes to osteogenic lineage determination through activation of Runx2 and directly regulates osteoblastic phenotypic genes. In response to bone morphogenic protein BMP2, Hoxa10 is rapidly induced and functions to activate the Runx2 transcription factor essential for bone formation. A functional element with the Hox core motif was characterized for the bone-related Runx2 P1 promoter. HOXA10 also activates other osteogenic genes, including the alkaline phosphatase, osteocalcin, and bone sialoprotein genes, and temporally associates with these target gene promoters during stages of osteoblast differentiation prior to the recruitment of RUNX2. Exogenous expression and small interfering RNA knockdown studies establish that HOXA10 mediates chromatin hyperacetylation and trimethyl histone K4 (H3K4) methylation of these genes, correlating to active transcription. HOXA10 therefore contributes to early expression of osteogenic genes through chromatin remodeling. Importantly, HOXA10 can induce osteoblast genes in Runx2 null cells, providing evidence for a direct role in mediating osteoblast differentiation independent of RUNX2. We propose that HOXA10 activates RUNX2 in mesenchymal cells, contributing to the onset of osteogenesis, and that HOXA10 subsequently supports bone formation by direct regulation of osteoblast phenotypic genes. <br/

Basel risk weights, asset correlations, and book-to-market equity: evidence from Asian countries

We examine the effect of firm book-to-market equity values (BE/ME) on asset correlations which play an important role in determining risk weights under the current Basel capital requirements. Using firms in China, Hong Kong, Japan, Korea, Singapore and Taiwan over a sample period from 1988 to 2013, we find that BE/ME has a negative effect on asset correlations. This suggests a role for BE/ME as an additional factor in determining asset correlations, and thus risk weights, also potentially reducing incentives for regulatory capital arbitrage

Neural cell responses to wear debris from metal-on-metal total disc replacements

PURPOSE: Total disc replacements, comprising all-metal articulations, are compromised by wear and particle production. Metallic wear debris and ions trigger a range of biological responses including inflammation, genotoxicity, cytotoxicity, hypersensitivity and pseudotumour formation, therefore we hypothesise that, due to proximity to the spinal cord, glial cells may be adversely affected. METHODS: Clinically relevant cobalt chrome (CoCr) and stainless steel (SS) wear particles were generated using a six-station pin-on-plate wear simulator. The effects of metallic particles (0.5-50 μm3 debris per cell) and metal ions on glial cell viability, cellular activity (glial fibrillary acidic protein (GFAP) expression) and DNA integrity were investigated in 2D and 3D culture using live/dead, immunocytochemistry and a comet assay, respectively. RESULTS: CoCr wear particles and ions caused significant reductions in glial cell viability in both 2D and 3D culture systems. Stainless steel particles did not affect glial cell viability or astrocyte activation. In contrast, ions released from SS caused significant reductions in glial cell viability, an effect that was especially noticeable when astrocytes were cultured in isolation without microglia. DNA damage was observed in both cell types and with both biomaterials tested. CoCr wear particles had a dose-dependent effect on astrocyte activation, measured through expression of GFAP. CONCLUSIONS: The results from this study suggest that microglia influence the effects that metal particles have on astrocytes, that SS ions and particles play a role in the adverse effects observed and that SS is a less toxic biomaterial than CoCr alloy for use in spinal devices. These slides can be retrieved under Electronic Supplementary Material

Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN

The effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN was discussed. The effect was studied using cross-sectional transmission electron microscopy (TEM). It was shown that the higher-temperature annealing reduced the ferromagnetic signal and produced antiferromagnetic Mn-nitride nanoclusters.open161